The current research attempts to examine the relationship between social-psychological conflict and their relation to family upbringing approaches among the adolescents of intermediate stage according to sex and economical level. To do this, the researcher prepared a questionnaire to measure social-psychological conflict that consisted of (32) item divided on four dimensions, and also she prepared a questionnaire to measure family upbringing approaches which composed of (28) item divided on four dimensions. The sample was (260) male and female student from intermediate stage chosen randomly. The results revealed that there were significant differences between social-psychological conflict which went to male, there was a negative correlation between democratic approach and social-psychological conflict, there was a positive correlation among each of excessive caring, carelessness, domination and social-psychological conflict, there were no significant differences between male and female based on family upbringing approaches and finally, the result showed that the economical level had serious influence on social-psychological conflict in which decreasing of income level means increasing of social-psychological conflict and vice versa.
كنا ولا نزال نقرأ عن انهيار اسهم بورصة وول ستريت في نيويورك عام 1929 لكننا لم نعايش ذلك الحدث الاقتصادي الكبير، اما الان فإننا نرى ونسمع ونحس بتداعيات هذه الازمة المالية بل الاقتصادية العالمية الحالية.
وهذه الشرارة التي كانت بدأت قبل حوالي 80 عاماً ها هي تعيد نفسها اليوم وتبدأ من نفس المكان- بورصة وول ستريت في نيويورك.
واذا كنا قرأنا عن انهيار نظام برتن- وودز بعد الحرب العالمية الث
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المستخلص
يعد تقييم اداء العاملين احد اهم الركائز الاساسية التي يتوقف عليها نجاح أي منظمة تسعى بأن تتطور وتتميز بأنشطتها واداءها وبالأخص المنظمات التي لها خصوصية في عملها كالأجهزة الرقابية التي تعتمد في اداء انشطتها ومسؤولياتها على كفاءة مواردها البشرية, ومن هذا المنطلق يهدف هذا البحث الى تصميم انموذج ثلاثي المحاور (المؤهلات والقدرات، الاداء والانجاز، التعاون والالتزام الوظيفي) ثُماني المستويات
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: Porous silicon (n-PS) films can be prepared by photoelectochemical etching (PECE) Silicon chips n - types with 15 (mA /cm2), in15 minutes etching time on the fabrication nano-sized pore arrangement. By using X-ray diffraction measurement and atomic power microscopy characteristics (AFM), PS was investigated. It was also evaluated the crystallites size from (XRD) for the PS nanoscale. The atomic force microscopy confirmed the nano-metric size chemical fictionalization through the electrochemical etching that was shown on the PS surface chemical composition. The atomic power microscopy checks showed the roughness of the silicon surface. It is also notified (TiO2) preparation nano-particles that were prepared by pulse laser eradication in e
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(1)
Static loads exposing to mechanical components can cause cracks, which are lead to form stress concentration regions causing the failure of structure. Generally, from 80% to 90% of structure failure is due to initiation of the cracks. Therefore, it is necessary to repair the crack and reduce its effect on the structure where the effect of the crack is modelled as an additional flexibility to the structure. In the last few years, piezoelectric materials have been considered as one of the most favourable repairing techniques. The piezoelectric material converts the applied voltage on it to a bending moment to counter the bending moment caused by the external load on the beam at the crack location. In this study, the design of the piez
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