In this paper the centralizing and commuting concerning skew left -derivations and skew left -derivations associated with antiautomorphism on prime and semiprime rings were studied and the commutativity of Lie ideal under certain conditions were proved.
Let R be an associative ring. In this paper we present the definition of (s,t)- Strongly derivation pair and Jordan (s,t)- strongly derivation pair on a ring R, and study the relation between them. Also, we study prime rings, semiprime rings, and rings that have commutator left nonzero divisior with (s,t)- strongly derivation pair, to obtain a (s,t)- derivation. Where s,t: R®R are two mappings of R.
A new distribution, the Epsilon Skew Gamma (ESΓ ) distribution, which was first introduced by Abdulah [1], is used on a near Gamma data. We first redefine the ESΓ distribution, its properties, and characteristics, and then we estimate its parameters using the maximum likelihood and moment estimators. We finally use these estimators to fit the data with the ESΓ distribution
Let S be a prime inverse semiring with center Z(S). The aim of this research is to prove some results on the prime inverse semiring with (α, β) – derivation that acts as a homomorphism or as an anti- homomorphism, where α, β are automorphisms on S.
This work generalizes Park and Jung's results by introducing the concept of generalized permuting 3-derivation on Lie ideal.
In this paper extensive examples and related counterexamples of the category of -skew -Armendariz rings are given. This category of rings regards a new generalization for the concepts of -skew Armendariz and skew -Armendariz rings. A ring is called -skew -Armendariz if for any ( ) Σ and ( ) Σ such that ( ) ( ) ( ), then ( ) ( ) for each and . First some general properties of -skew -Armendariz rings are studied and then relations between -skew -Armendariz rings and other related rings are investigated. Also various examples of non -skew -Armendariz rings are established.
In this paper we tend to describe the notions of intuitionistic fuzzy asly ideal of ring indicated by (I. F.ASLY) ideal and, we will explore some properties and connections about this concept.
In this paper we introduce the notions of bi-ideal with respect to an element r
denoted by (r-bi- ideal ) of a near ring , and the notion fuzzy bi- ideal with respect
to an element of a near ring and the relation between F-r-bi-ideal and r-bi-ideal of
the near ring, we studied the image and inverse image of r-bi- ideal under
epimomorphism ,the intersection of r-bi- ideals and the relation between this ideal
and the quasi ideal of a near ring, also we studied the notion intuitionistic fuzzy biideal
with respect to an element r of the near ring N, and give some theorem about
this ideal .
In this paper is to introduce the concept of hyper AT-algebras is a generalization of AT-algebras and study a hyper structure AT-algebra and investigate some of its properties. “Also, hyper AT-subalgebras and hyper AT-ideal of hyper AT-algebras are studied. We study on the fuzzy theory of hyper AT-ideal of hyper AT-algebras hyper AT-algebra”. “We study homomorphism of hyper AT-algebras which are a common generalization of AT-algebras.
In this paper we show the nilpotency of nilpotent derivation of simeprime Γ-ring with characteristic 2 must be a power of 2 and we show the nilpotency of a nilpotent derivation of simeprime Γ-ring is either odd or a power of 2 without torsion condition.
In this work, porous Silicon structures are formed with photochemical etching process of n-type Silicon(111) wafers of resistivity (0.02.cm) in hydrofluoric acid (HF) of concentration (39%wt) under light source of tungeston halogen lamp of (100 Watt) power. Samples were anodized in a solution of 39%HF and ethanol at 1:1 for 15 minutes. The samples were realized on n-type Si substrates Porous Silicon layers of 100m thickness and 30% of porousity. Frequency dependence of conductivity for Al/PSi/Si/Al sandwich form was studied. A frequency range of 102-106Hz was used allowing an accurate determination of the impedance components. Their electronic transport parameters were determined using complex impedance measurements. These measu
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