This study has three parts, the first one is the synthesis of a novel Schiff bases by the condensation of guanine or 9-[{2-hydroxyethoxy}methyl]-9H-guanine with variety aldehydes to yield four different bases as follows: (E)-2-((4-nitrobenzylidene)amino)-1,9-dihydro-6H-purin-6-one (S1), (E)-2-((4-methoxybenzylidene)amino)-1,9-dihydro-6H-purin-6-one (S2), (E)-2-((2-hydroxybenzylidene) amino)-9-((2-hydroxy ethoxy)methyl)-1,9-dihydro-6H-purin-6-one (S3), and (E)-2-(((9-((2-hydroxy ethoxy)methyl)-6-oxo-6,9-dihydro-1H-purin-2-yl)imino)methyl)benzoic acid (S4). Then, spectroscopic analyses such as Elemental Analysis, UV/VIS, Mass spectra, FTIR, 1H,13C-NMR were made to recognize these bases. In the second part, the ability of synthesized bases to undergo a charge transfer reaction was examined in an ethanolic solution at 28℃ with Iodine (I2) and 2,3-Dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) acceptors. The nonbonding interactions were studied using Benesi–Hildebrand method to estimate the stability parameters for all formed charge transfer complexes. The results of CT-energies and Gibbs free energies (ΔG˚) confirmed the stability of these complexes, and all complexes follow the Benesi–Hildebrand equation. The results showed that the DDQ-complexes have an affinity constant ranging from (916.6–24,400) mol−1.L higher than the affinity constant of I2-complexes which ranges from (428.5–7000) mol−1.L. Moreover, the KCT of S2 > S1 and KCT of S4 > S3 were as follows [1222.2 for S1-I2, 4333.3 for S1-DDQ, 2812.5 for S2-I2, 4800 for S2-DDQ] and [3809.5 for S3-I2, 12,200 for S3-DDQ, 7000 for S4-I2, 24,400 for S4-DDQ] due to the specific properties of each compound. The direct energy gap (Egdir) of each complex was also obtained by applying Tauc's method. Iodine complexes with S1, S2, S3, S4, as well as S1-DDQ displayed energy gaps equal to (5.14, 5.11, 4.61, 4.51, and 3.90) eV, respectively, and are likely to act as insulators. In contrast, the DDQ complexes of (S2/S3/S4) bases exhibited Egdir values at (2.85–2.24) electron volts which makes them suitable for semiconductor material usage. Finally, the third part of this work included a theoretical study using DFT/B3LYP/3-21G method to illustrate and prove the experimental findings, which were consistent with the theoretical results.
A method was developed that offers a rapid, simple and accurate technique for the determination of chlorophenols at trace levels in aqueous samples with very limited volumes of organic solvents. These compounds were acetylated, then preliminarily extracted with n-hexane. The enriched chlorophenols were directly analyzed using gas chromatography with an electron-capture detector. The detection limits were in the range of 0.001–0.005 mg/L, except for 2-chlorophenol, which was always above 0.013 mg/L. Relative standard deviation for the spiked water samples ranged from 2.2 to 6.1%, while relative recoveries were in the range of 67.1 to 101.3%.
The effect of D phase polyamide (PA6)on the rheological properties, Young Modulus and the thermal expansion coefficient of two blends groups (bitumen-polyamide) were tested. The first group was for bitumen-PA6 blends and the second group for bitumen blended with polymer resulted from the crystallization of PA6-formic acid solution in water(PAFW).The obtained results proved that adding both types of polyamide has led to a rise in toughness and softening point temperature while the penetration Index approached -3 after adding the polyamide. So, all these changes make bitumen-polyamide blends more suitable for use in hot climate regions. The blends properties were explained according to the reaction that takes place between the polyamide and
... Show MoreSemiconductor quantum dots (QDs) have attracted tremendous attentions for their unique characteristics for solid-state lighting and thin-film display applications. A simple chemical method was used to synthesis quantum dots (QDs) of zinc sulfide (ZnS) with low cost. The XRD) shows cubic phase of the prepared ZnS with an average particles size of (3-29) nm. In UV-Vis. spectra observed a large blue shift over 38 nm. The band gaps energy (Eg) was 3.8 eV and 3.37eV from the absorption and photoluminescence (PL) respectively which larger than the Eg for bulk. QDs-LED hybrid devices were fabricated using ITO/ PEDOT: PSS/ Poly-TPD/ ZnS-QDs/ with different electron transport layers and cathode of LiF/Al layers. The EL spectrum reveals a bro
... Show MoreThis study describes preparation a new series of tetra-dentate N2O2 dinuclear complexes Cr(III), Co(II)and Cu(II) of the Schiff base 2-[5-(2-hydroxy-phenyl)-1,3,4-thiadiazol-2-ylimino]-methyl-naphthalen-1-ol], (LH2) derived from 1-hydroxy-naphthalene-2-carbaldehyde with 2-amino-5-(2-hydroxy-phenyl)-1,3,4-thiadiazole. These ligands were characterized by FT-IR, UV-Vis, Mass spectra, elemental analysis, and 1H-NMR. All prepared complexes have been characterized by conductance measurement, magnetic susceptibility, electronic spectra, infrared spectrum, thermal Analysis (TGA), and metal analysis by atomic absorption. The stoichiometry of metal to ligand, magnetic susceptibility, and electronic spectra measurements show an octahedral geom
... Show MoreThe research is an article that teaches some classes of fully stable Banach - Å modules. By using Unital algebra studies the properties and characterizations of all classes of fully stable Banach - Å modules. All the results are existing, and they've been listed to complete the requested information.
Abstract: This study aims to investigate the backscattering electron coefficient for SixGe1-x/Si heterostructure sample as a function of primary electron beam energy (0.25-20 keV) and Ge concentration in the alloy. The results obtained have several characteristics that are as follows: the first one is that the intensity of the backscattered signal above the alloy is mainly related to the average atomic number of the SixGe1-x alloy. The second feature is that the backscattering electron coefficient line scan shows a constant value above each layer at low primary electron energies below 5 keV. However, at 5 keV and above, a peak and a dip appeared on the line scan above Si-Ge alloy and Si, respectively, close to the interfacing line
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