The work includes fabrication of undoped and silver-doped nanostructured nickel oxide in form thin films, which use for applications such as gas sensors. Pulsed-laser deposition (PLD) technique was used to fabricate the films on a glass substrate. The structure of films is studied by using techniques of x-ray diffraction, SEM, and EDX. Thermal annealing was performed on these films at 450°C to introduce its effect on the characteristics of these films. The films were doped with a silver element at different doping levels and both electrical and gas sensing characteristics were studied and compared to those of the undoped films. Reasonable enhancements in these characteristics were observed and attributed to the effects of thermal annealing as well as doping with silver. Gas sensing measurements were carried out using NO2 as a gaseous species to be detected. The results showed that the electrical conductivity, density as well as mobility of charge carriers, and gas sensitivity were affected by the doping level and annealing treatment.
The electrical properties of thin film interdigital metalÂ
phthalocyanine - metal devices have been studied with regard to purity and electrode material . Devices utilising phthalocyanines ( H2 Pc ,
NiPc and CuPc) films with Au, Ag , Cu ' In and AI electrodes have been prepared with Pc layers fabricated from both as - supplied Pc powder and entrainer - subeimed material . The results indicate that
sublimed phthalocyanine with gold electrodes offers the best material
combination with regard to linearity , reversibility and reproducibility. Measurements of current &nbs
... Show MoreIn this study, SnS thin films were deposited onto glass substrate by thermal evaporation technique at 300K temperature. The SnS films have been prepared with different thicknesses (100,200 &300) nm. The crystallographic analysis, film thickness, electrical conductivity, carrier concentration, and carrier mobility were characterized. Measurements showed that depending on film thickness. The D.C. conductivity increased with increase in film thickness from 3.720x10-5 (Ω.cm)-1 for 100 nm thickness to 9.442x10-4 (Ω.cm)-1 for 300 nm thicknesses, and the behavior of activation energies, hall mobility, and carrier concentration were also studied.
Thin films of iridium doped indium oxide (In2O3:Eu)with different doping ratio(0,3,5,7,and 9%) are prepared on glass and single crystal silicon wafer substrates using spray pyrolysis method. The goal of this research is to investigate the effect of doping ratio on of the structural, optical and sensing properties . The structure of the prepared thin films was characterized at room temperature using X-ray diffraction. The results showed that all the undoped and doped (In2O3:Eu)samples are polycrystalline in structure and nearly stoichiometric. UV-visible spectrophotometer in the wavelength range (200-1100nm)was used to determine the optical energy gap and optical constants. The optical transmittance of 83% and the optical band gap of 5.2eV
... Show MoreThe thermoelectric power (S) of thermal evaporated a-InAs films
were measured in the temperature rang (303-408) K.
These films were prepared at different thickness (250,350,450) nm and treated at different annealing temperatures (303,373,423,473,523) K.
The behaviour of the thermoelectric power studies of these films
as a function of thickness and annealing temperature showed the thermoelectric power an increasing trend with annealing temperature
,whereas it decreases as the film thickness increases.
Background: One of the most important complications of fixed orthodontic treatment is formation of white spots, which are initial carious lesions. Addition of antimicrobial agents into orthodontic adhesive material might be wise solution for prevention of white spots formation. The aim of this study was to evaluate the antibacterial properties of orthodontic adhesive primer against S. Mutans after adding the three different types of nanoparticles (Ag, ZnO, or TiO2). Materials and methods: Discs were prepared using empty insulin syringe approximately 2 mm×2 mm rounded in shape specimens (40 discs) were divided into four groups (ten discs for each group): The first group was the control (made from primer only), the second group (10 dis
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In this work, CdO:In/Si heterojunction solar cell has been made by vacuum evaporation of cadmium oxide doped with 1% of indium thin film onto glass and silicon substrates with rate deposition (3.9A/sec) and thickness(≈250nm). XRD was investigated, the transmission was determined in range (300-1100)nm and the direct band gap energy is 2.43 eV, I-V characterization of the cell under illumination was investigated , the cell shows an open circuit voltage (Voc) of 0.6 Volt, a short circuit current density (Jsc) of 12.8 mA/cm2, a fill factor (F.F) of 0.66, and a conversion efficiency (η) of 5.2%.
In this research, deposition of titanium oxide (TiO2) and vanadium oxide (V2O5) thin film in different mixing percentage (0, 25 ,50, 75 and100)% on the substrate of glass .The coating thickness was ( 50 nm ).
In this research contact angle was measured and the effect of weather conditions. Results showed that the value of the contact angle of the prepared films reached its highest value at 50% (TiO2+V2O5) was 160º.
The results showed that the optical transmittance of TiO2 and V2O5 thin film decrease with increasing the deposition angle and decrease with increasing V2O5 pro
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In this research, the electrical conductivity and Hall effect measurements have been investigated on the CuInTe2 (CIT) thin films prepared by thermal evaporation technique on glass substrate at room temperature as a function of annealing temperature (R.T,473,673)K for different thicknesses (300 and 600) nm. The samples were annealed for one hour. The electrical conductivity analysis results demonstrated that all samples prepared have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), and the electrical conductivity increases with the increase of annealing temperature whereas it showed opposite trend with thickness , where the electrical conductivity would d
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