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Modeling of Electron and Lattice Temperature Distribution Through Lifetime of Plasma Plume
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When employing shorter (sub picosecond) laser pulses, in ablation kinetics the features appear which can no longer be described in the context of the conventional thermal model. Meanwhile, the ablation of materials with the aid of ultra-short (sub picosecond) laser pulses is applied for micromechanical processing. Physical mechanisms and theoretical models of laser ablation are discussed. Typical associated phenomena are qualitatively regarded and methods for studying them quantitatively are considered. Calculated results relevant to ablation kinetics for a number of substances are presented and compared with experimental data. Ultra-short laser ablation with two-temperature model was quantitatively investigated. A two-temperature model for the description of transition phenomena in a non-equilibrium electron gas and a lattice under picosecond laser irradiation is proposed. Some characteristics are hard to measure directly at all. That is why the analysis of physical mechanisms involved in the ablation process by ultra-short laser pulses has to be performed on the basis of a theoretical consideration of `indirect' experimental data. For Copper and Nickel metal targets, the two-temperature model calculations explain that the temperature of the electron subsystem increased suddenly and approached a peak value at the end of laser pulse. In addition, the temperature profile of lattice temperature subsystem evolution slowly, and still increasing after the end of laser pulse. A good agreement prevails when a comparison between the present results and published results.

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Publication Date
Sun Aug 13 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Electron Transfer At Semiconductor / Liquid Interfaces
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Electron Transfer reaction rate constants at Semiconductor / Liquid interfaces are calculated dy using the Fermi Golden Rule for Semiconductor. The reorganization energy   eV is computed for Semiconductor / Liquid Interfaces system in two solvents and compared with experimental value. The driving force (free energy) ΔGo(eV) is calculated depending on spectrum Ru(H2L`)2 (NCS)2 . The transfer is treated according with weak coupling (nonadiabatic) for two – state level between the Semiconductor and acceptor molecule state.

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Publication Date
Sun Apr 23 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Electron Transfer At Metal/Molecule Interface
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   Theoretically description of the electron transfer of the electron transfer of met/mol has been investigated in this work according to the quantum theory. By using a model that is derived depending on the first order perturbation theory, the rate constant at met/mol interface can be calculated with the calculated reorganization energy. The reorganization energy that is evaluated according to the outer sphere model is based on the electstatistics potential of the molecular donor and acceptor. The molecular parameters introduced in this model are the molecular weight, mass, density, and radius of molecule have been evaluated according to the apparent molar volume using spherical approach.       Th

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Publication Date
Thu Oct 21 2021
Journal Name
Physical Review E
Lattice Boltzmann method with moment-based boundary conditions for rarefied flow in the slip regime
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Publication Date
Sun Jun 12 2011
Journal Name
Baghdad Science Journal
Impedance Characteristics of Pulsed Atmospheric Electrical Discharge in Spherical Plasma Switch
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A number of pulsed experiments have been carried out using a high-voltage circuit containing R,L, and C in certain arrangements. A spherical spark gap of steel electrodes was used as a high-current switch operated by a voltage of up to 8kV and triggered in both self-triggering and third-electrode triggering modes. Current measurements were carried out by using both current-viewing resistor and Rogowski coils designed for this purpose. Typical current waveforms have shown obvious dominating inductance effect of the circuit components in an underdamped oscillation. The behavior of the circuit impedance was studied by recording both pulsed current peaks and the charging voltages when currents of up to 2.5kA were recorded. The dur

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Publication Date
Wed Jan 01 2020
Journal Name
International Conference Of Numerical Analysis And Applied Mathematics Icnaam 2019
Investigate of TiO2 and SnO2 as electron transport layer for perovskite solar cells
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Publication Date
Thu Dec 01 2011
Journal Name
Journal Of Engineering
SIMULATION OF FLIGHT THROUGH GUST
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A flight simulation programme has been developed on a personal computer using Microsoft
FORTRAN to simulate flight trajectories of a light aircraft by using Six-Degree-of-Freedom
equation of motion. The simulation has been made realistic through pre-programmed the input to
the control surfaces, atmospheric gust during the flight mode. The programme plays an important
role in the evaluation and validation of the aircraft design process. A light aircraft (Cessna 182T)
has been tested through free flight, gliding flight, flight with gust. The results show good trend and
show that the programme could be dependent as a realistic flight test programme.

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Publication Date
Mon Feb 25 2019
Journal Name
Iraqi Journal Of Physics
Strain specificity in antimicrobial activity of non-thermal plasma
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Non-thermal (low-temperature) plasma may act as an alternative approach to control superficial wound and skin infections when the effectiveness of chemical agents is weak due to natural pathogen or biofilm resistance. In this paper an atmospheric pressure plasma needle jet device which generates a cold plasma jet is used to measure the effectiveness of plasma treatment against different pathogenic bacteria and to test the individual susceptibility of pathogenic bacteria to non-thermal argon plasma. It is found that, Gram-negative bacteria were more susceptible to plasma treatment than Gram-positive bacteria. For the Gram-negative bacteria Pseudomonas aeruginosa, there were no survivors among the initial 1x108C.F.U (Co

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Publication Date
Fri Feb 14 2020
Journal Name
Journal Of Mechanical Engineering Research And Developments
Noise effects in skill discretion and modeling
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Diesel generators is widely used in Iraq for the purpose of maintaining electric power demand. Large number of operators engaged in this work encounters high level of noise generated by back pack type diesel generators used for this purpose. High level of noise exposure gives different kinds of ill effect on human operators. Exact nature of deteriorated work performance is not known., in present research , quastionaire was adsministered 86 repondents in Baghdad city were exposured to wide range of noise level (80-110) dB(A) with different ages and they have different skill discretion levels. Noise levels A-weigthed decibles dB(A) were measured over 8 weeks two times aday during the 2019 summer using a sound level meter.For predicting the wo

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Publication Date
Tue Jul 07 2020
Journal Name
Journal Of Mechanical Engineering Research & Developments
NOISE EFFECTS IN SKILL DISCRETION AND MODELING
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Diesel generators is widely used in Iraq for the purpose of maintaining electric power demand. Large number of operators engaged in this work encounters high level of noise generated by back pack type diesel generators used for this purpose. High level of noise exposure gives different kinds of ill effect on human operators. Exact nature of deteriorated work performance is not known., in present research , quastionaire was adsministered 86 repondents in Baghdad city were exposured to wide range of noise level (80-110) dB(A) with different ages and they have different skill discretion levels. Noise levels A-weigthed decibles dB(A) were measured over 8 weeks two times aday during the 2019 summer using a sound level meter.For predicting the wo

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Publication Date
Sun Aug 13 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Temperature and Doping Dependencies Junction Of Polythiophene Schottky Barrier
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 The junction between  polythiophene,  a conducting  polymer formed by  electrochemical polymerization,  and n-type silicon was  studied the temperature and doping dependencies were observed in the junction characteristics. The increase of junction  temperature leads to increase the saturation current, the barrier height, and decrease of the ideality factor for  junction. While the reduction in doping concentration causes a decrease  in the forward current. The results were  explained  according to the conventional  Schottky diode theories. 

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