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On the Laser Micro Cutting: Experimentation and Mathematical Modeling based on RSM-CCD
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The laser micro-cutting process is the most widely commonly applied machining process which can be applied to practically all metallic and non-metallic materials. While this had challenges in cutting quality criteria such as geometrical precision, surface quality and numerous others. This article investigates the laser micro-cutting of PEEK composite material using nano-fiber laser, due to their significant importunity and efficiency of laser in various manufacturing processes. Design of experiential tool based on Response Surface Methodology (RSM)-Central Composite Design (CCD) used to generate the statistical model. This method was employed to analysis the influence of parameters including laser speed, laser power, laser frequency and number of passes on the cutting characteristics -and geometrical. Cutting-geometry requirements are significant quality features since they are one of the metrics for the geometrical precision of micro-cutting proses it was concluded that higher laser power, slower speed, and more pass number result in a low kerf taper, these parameters have a significant impact on the other cutting characteristics, and geometrical. Whereas the frequency has the lowers impact on the cutting geometrical. Finally, the experiments show Maximum depth was 2000, width minimum top kerf width was 305.56 µm and the minimum angle of 2.8906.

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Publication Date
Sun Mar 01 2020
Journal Name
Iraqi Journal Of Physics
Study the performance of pentacene based organic field effect transistor by using monolayer, bilayer and trilayer with different gate insulators
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In this paper, Pentacene based-organic field effect transistors (OFETs) by using different layers (monolayer, bilayer and trilayer) for three different gate insulators (ZrO2, PVA and CYEPL) were studied its current–voltage (I-V) characteristics by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Source-drain voltage (Vds) was also investigated to study the effects of gate dielectric on electrical performance for OFET. The effect of capacitance semiconductor in performance OFETs was considered. The values of current and transconductance which calculated using MATLAB simulation. It exhibited a value of current increase with increasing source-drain voltage.

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Publication Date
Tue May 01 2018
Journal Name
Journal Of Physics: Conference Series
Multispectral and Panchromatic used Enhancement Resolution and Study Effective Enhancement on Supervised and Unsupervised Classification Land – Cover
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Publication Date
Sat Dec 31 2022
Journal Name
Iraqi Journal Of Market Research And Consumer Protection
EFFECT OF ADDING DIFFERENT LEVELS OF DILL SEEDS TO THE DIET ON PHYSIOLOGICAL TRAITS OF BROILERS : EFFECT OF ADDING DIFFERENT LEVELS OF DILL SEEDS TO THE DIET ON PHYSIOLOGICAL TRAITS OF BROILERS
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This study was conducted in the poultry field of the department of animal production, college of agricultural engineering sciences, university of Baghdad for the period from 10/15/2021 to 11/25/2021 with the aim of showing the effect of adding different levels of dill seeds to the diet on productive and carcass traits For broiler meat. In this study, 200 unsexed broiler chicks of breed (Ross 308) were used, one day age, with a starting weight of 41.46 g. The chicks were randomly distributed to 5 treatments, and each treatment included 4 replicates, 10 birds for each replicate. The birds were fed three diets: the starter diet, the growth diet and the final diet. The experiment treatments were T1,

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Publication Date
Sat Mar 01 2008
Journal Name
The Third International Conference On Mathematical Sciences
On Solvability of an Operator Equation
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Publication Date
Sat May 01 2021
Journal Name
Journal Of Physics: Conference Series
New Normality on Generalized Topological Spaces
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Abstract<p>A space X is named a πp – normal if for each closed set F and each π – closed set F’ in X with F ∩ F’ = ∅, there are p – open sets U and V of X with U ∩ V = ∅ whereas F ⊆ U and F’ ⊆ V. Our work studies and discusses a new kind of normality in generalized topological spaces. We define ϑπp – normal, ϑ–mildly normal, & ϑ–almost normal, ϑp– normal, & ϑ–mildly p–normal, & ϑ–almost p-normal and ϑπ-normal space, and we discuss some of their properties.</p>
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Publication Date
Tue Nov 09 2021
Journal Name
Journal Of Accounting And Financial Studies ( Jafs )
Economic perspectives on employment 2021-2030
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Long before the pandemic, labour force all over the world was facing the quest of incertitude, which is normal and inherent of the market, but the extent of this quest was shaped by the pace of acceleration of technological progress, which became exponential in the last ten years, from 2010 to 2020. Robotic process automation, work remote, computer science, electronic and communications, mechanical engineering, information technology digitalisation o public administration and so one are ones of the pillars of the future of work. Some authors even stated that without robotic process automation (RPA) included in technological processes, companies will not be able to sustain a competitive level on the market (Madakan et al, 2018). R

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Publication Date
Sun Sep 04 2016
Journal Name
Baghdad Science Journal
Some Results on Weak Essential Submodules
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Throughout this paper R represents commutative ring with identity and M is a unitary left R-module. The purpose of this paper is to investigate some new results (up to our knowledge) on the concept of weak essential submodules which introduced by Muna A. Ahmed, where a submodule N of an R-module M is called weak essential, if N ? P ? (0) for each nonzero semiprime submodule P of M. In this paper we rewrite this definition in another formula. Some new definitions are introduced and various properties of weak essential submodules are considered.

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Publication Date
Sun Mar 01 2009
Journal Name
Baghdad Science Journal
ON NAIVE TAYLOR MODEL INTEGRATION METHOD
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Interval methods for verified integration of initial value problems (IVPs) for ODEs have been used for more than 40 years. For many classes of IVPs, these methods have the ability to compute guaranteed error bounds for the flow of an ODE, where traditional methods provide only approximations to a solution. Overestimation, however, is a potential drawback of verified methods. For some problems, the computed error bounds become overly pessimistic, or integration even breaks down. The dependency problem and the wrapping effect are particular sources of overestimations in interval computations. Berz (see [1]) and his co-workers have developed Taylor model methods, which extend interval arithmetic with symbolic computations. The latter is an ef

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Publication Date
Fri May 01 2020
Journal Name
Journal Of Physics: Conference Series
Hyper AT-ideal on AT-algebra
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Abstract<p>In this paper is to introduce the concept of hyper AT-algebras is a generalization of AT-algebras and study a hyper structure AT-algebra and investigate some of its properties. “Also, hyper AT-subalgebras and hyper AT-ideal of hyper AT-algebras are studied. We study on the fuzzy theory of hyper AT-ideal of hyper AT-algebras hyper AT-algebra”. “We study homomorphism of hyper AT-algebras which are a common generalization of AT-algebras.</p>
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Publication Date
Mon Oct 01 2012
Journal Name
2012 Ieee International Conference On Circuits And Systems (iccas)
A survey of on-chip monitors
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Systems on Chips (SoCs) architecture complexity is result of integrating a large numbers of cores in a single chip. The approaches should address the systems particular challenges such as reliability, performance, and power constraints. Monitoring became a necessary part for testing, debugging and performance evaluations of SoCs at run time, as On-chip monitoring is employed to provide environmental information, such as temperature, voltage, and error data. Real-time system validation is done by exploiting the monitoring to determine the proper operation of a system within the designed parameters. The paper explains the common monitoring operations in SoCs, showing the functionality of thermal, voltage and soft error monitors. The different

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