Like the digital watermark, which has been highlighted in previous studies, the quantum watermark aims to protect the copyright of any image and to validate its ownership using visible or invisible logos embedded in the cover image. In this paper, we propose a method to include an image logo in a cover image based on quantum fields, where a certain amount of texture is encapsulated to encode the logo image before it is included in the cover image. The method also involves transforming wavelets such as Haar base transformation and geometric transformation. These combination methods achieve a high degree of security and robustness for watermarking technology. The digital results obtained from the experiment show that the values of Peak Sig

In this paper, integrated quantum neural network (QNN), which is a class of feedforward

neural networks (FFNN’s), is performed through emerging quantum computing (QC) with artificial neural network(ANN) classifier. It is used in data classification technique, and here iris flower data is used as a classification signals. For this purpose independent component analysis (ICA) is used as a feature extraction technique after normalization of these signals, the architecture of (QNN’s) has inherently built in fuzzy, hidden units of these networks (QNN’s) to develop quantized representations of sample information provided by the training data set in various graded levels of certainty. Experimental results presented here show that

This research aims to study the optical characteristics of semiconductor quantum dots (QDs) composed of CdTe and CdTe/CdSe core-shell structures. It utilizes the refluxed method to synthesize these nanoscale particles and aims to comprehend the growth process by monitoring their optical properties over varied periods of time and pH 12. Specifically, the optical evolution of these QDs is evaluated using photoluminescence (PL) and ultraviolet (UV) spectroscopy. For CdTe QDs, a consistent absorbance and peak intensity increase were observed across the spectrum over time. Conversely, CdTe/CdSe QDs displayed distinctive absorbance and peak intensity variations. These disparities might stem from irregularities in forming selenium (Se) layers a

The CdS quantum dots were prepared by chemical reaction
of cadmium oleylamine (Cd –oleylamine complex) with the
sulfite-oleylamine (S-oleylamine) with 1:6 mole ratios. The
optical properties structure and spectroscopy of the product
quantum dot were studied. The results show the dependence of the
optical properties on the crystal dimension and the formation of
the trap states in the energy band gap.

     CdSe/CdS Core/shell nanostructures were prepared through the chemical synthesis method. XRD ,FESEM and TEM investigations confirmed the formation of core/shell structure for the sample. The AFM measurement was employed to reveal the morphology of the prepared thin films. Optical characterizations of the quantum dots were done by UV-visible and photoluminescence spectra. It was found that the quantum dots prepared has  good optical properties. Due to the presence of shell coating on core CdSe, the energy gap of the core/shell nanomaterial were increased from 2.2 to 2.3eV. The resulted QDs  are a promising candidate for photovoltaic and biosensor applications.

  Quantum gates which are represented by unitary matrices have potentials to implement the reversible logic circuits. M and M+ gates are two well-known quantum gates which are used to synthesize the reversible logic circuits. In this work, we have used behavioral description of these gates, instead of unitary matrix description, to synthesize reversible logic circuits. By this method, M and M+ gates are shown in the truth table form.

Low-dimensional materials have attracted significant attention in developing and enhancing the performance of quantum well lasers due to their extraordinary unique properties. The optical confinement factor is one of the most effective parameters for evaluating the optimal performance of a semiconductor laser diode when used to measure the optical gain and current threshold. The optical confinement factor and the radiative recombination of single quantum wells (SQW) and multi-quantum wells (MQW) for InGaAsP/InP have been theoretically studied using both radiative and Auger coefficients. Quantum well width, barrier width, and number of quantum wells were all looked at to see how these things changed the optical confinement factor and

In this work, the effects of size, and temperature on the linear and nonlinear optical properties in InGaN/GaN inverse parabolic and triangular quantum wells (IPQW and ITQW) for different concentrations at the well center were theoretically investigated. The indium concentrations at the barriers were fixed to be always x_max = 0.2. The energy levels and their associated wave functions are computed within the effective mass approximation. The expressions of optical properties are obtained analytically by using the compact density-matrix approach. The linear, nonlinear, and total absorption coefficients depending on the In concentrations at the well center are investigated as a function of the incident photon energy for different