The synthesis , characterization and mesomorphic behaviour of new Nacyl , thiourea and imidazole derivatives which derived from corresponding Schiff bases are reported.             All the synthesized compounds which contain flexible methylene group in the centre of the molecule did not show any liquid crystalline properties . The derivatives of N- acyl [III]e  and thiourea [VI]e  which contain  biphenyl and all compounds with one phenyl in the centre of the molecule display liquid crystalline behaviour .While the imidazoles did not show any liquid crystalline properties except [V]b [V]e  with biphenyl in the centre of the molecule . All th

    The experiment was conducted at the Agricultural Research Office in Baghdad during July 2020 to test the ability of nanomaterials (ZnO and TiO₂) to inhibit  ochratoxin A, which is produced by a number of microbiology (fungi) including: Aspergillus ochraceus, A. niger, ,A. steynii, A. carbonarius,  Pencillume verrucosum and P. nordicum. The standard ochratoxin A, with known concentration, was treated with different concentrations of nanomaterials  (20, 40, 60, and 80 ppm) and two different particle sizes of nanoparticles approximately (15 nm) and (70 nm) for each (ZnO) and TiO₂; with 16 transactions. Through an examination of the HPLC, the results showed that all tra

Polycrystalline ingots of cadmium telluride have been synthesized using the direct
reaction technique, by fusing initial component consisting from pure elements in
stoichiometric ratio inside quartz ampoule is evacuated 10-6 torr cadmium telluride has
been grown under temperature at (1070) oC for (16) hr. was used in this study, the phases
observed in growing CdTe compound depend on the temperature used during the growth
process. Crystallography studies to CdTe compound was determined by X-ray diffraction
technique, which it has zinc blend structure and cubic unit cell, which lattice constants is
a=6.478
oA

     Magnesium oxide nanoparticles (MgO NPs) were synthesized by a green method using the peels of Persimmon extract as the reducing agent , magnesium nitrate, and NaOH. This method is eco-friendly and non-toxic. In this study, an ultrasound device was used to reduce the particle size, with the impact on the energy gap was set at the beginning at 5.39 eV and then turned to 4.10 eV. The morphological analysis using atomic force microscopy (AFM)  showed that the grain size for MgO NPs was 67.70 nm which became 42.33 nm after the use of the ultrasound. The shape of the particles was almost spherical and became cylindrical.  In addition the Field-Emission Scanning Electron Microscopy (FESEM) analysis sh

     The aim of this research is to study the surface alteration characteristics and surface morphology of the superhydrophobic/hydrophobic nanocomposite coatings prepared by an electrospinning method to coat various materials such as glass and metal. This is considered as a low cost method of fabrication for polymer solutions of Polystyrene (PS), Polymethylmethacrylate (PMMA) and Silicone Rubber (RTV). Si were prepared in various wt% of composition for each solutions. Contact angle measurement, surface tension, viscosity, roughness tests were calculated for all specimens. SEM showed the morphology of the surfaces after coated. PS and PMMA showed superhydrophobic properties for metal substrate, while Si showed hydroph

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and po

Study was made on the optical properties of Ge2oSe8othinfilms prepared by vac-uum evaporation as radiated by (0,34,69) Gy of 13 ray.The optical band gab Eg and tailing band A.Et were studied in the photon energy range ( 1 to 3)eV. The a-Ge20Se8o film was found to be indirect gap with energy gap of (1.965,1.9 , 1.82) eV at radiated by B ray with absorption doses of (0,34,69)Gy respectively.The Ea and AEt of Ge20Se80 films showed adecrease in E8 and an increase in AEt with radiation. This be-havior may be related to structural defects and dangling bonds.

In this study lattice parameters, band structure, and optical characteristics of pure and V-doped ZnO are examined by employing (USP) and (GGA) with the assistance of First-principles calculation (FPC) derived from (DFT). The measurements are performed in the supercell geometry that were optimized. GGA+U, the geometrical structures of all models, are utilized to compute the amount of energy after optimizing all parameters in the models. The volume of the doped system grows as the content of the dopant V is increased. Pure and V-doped ZnO are investigated for band structure and energy bandgaps using the Monkhorst–Pack scheme's k-point sampling techniques in the Brillouin zone (G-A-H-K-G-M-L-H). In the presence of high V content, the ban

Copper tin sulfide (Cu2SnS3) thin films have been grown on glass
substrate with different thicknesses (500, 750 and 1000) nm by flash
thermal evaporation method after prepare its alloy from their
elements with high purity. The as-deposited films were annealed at
473 K for 1h. Compositional analysis was done using Energy
dispersive spectroscopy (EDS). The microstructure of CTS powder
examined by SEM and found that the large crystal grains are shown
clearly in images. XRD investigation revealed that the alloy was
polycrystalline nature and has cubic structure with preferred
orientation along (111) plane, while as deposited films of different
thickness have amorphous structure and converted to polycrystalline

The electrical properties of pure NiO and NiO:Au Films which are
deposited on glass substrate with various dopant concentrations
(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Co
annealing temperature will be presented. The results of the hall effect
showed that all the films were p-type. The Hall mobility decreases
while both carrier concentration and conductivity increases with the
increasing of annealing temperatures and doping percentage, Thus,
indicating the behavior of semiconductor, and also the D.C
conductivity from which the activation energy decrease with the
doping concentration increase and transport mechanism of the charge
carriers can be estimated.