The thermal evaporation technique was used to prepare the Ni-Cr films with a thickness of 200 nm and a rate of deposition of 0.22nm/Sec. The annealing was performed at 373 and 473 K. The structural and optical analyses of the grown layers were achieved and XRD patterns showed amorphous structure transferred to polycrystalline for film annealed at 373 and 473 K. AFM analysis showed that the surface of Ni-Cr films is homogenous and the average roughness, optical energy gap and absorption coefficient were increased with increasing annealing temperature (Ta).
In this study the melting point and hardness of the paraffin wax was improved by mixing it with 1:1 ratio of micro crystalline wax then adding weight percentage wt% of locally produced nano particles (CuO,ZnO,AI2O3 and bentonite ) for each addition to the wax mixture. The results showed an increase in the melting point and hardness values of the prepared samples by increasing the weight percentage of each nano particles additives. . It was found that the addition of nano bentonite to the wax mixture gave high melting point values (122.5°C)and hardness (81.2)followed by melting point value (97°C)and hardness(68.2)resulting from the addition of CuO nano particles to the wax mixture compared to other used nano particles.
Tin Selenide (SnSe) Nano crystalline thin films of thickness 400±20 nm were deposited on glass substrate by thermal evaporation technique at R.T under a vacuum of ∼ 2 × 10− 5 mbar to study the effect of annealing temperatures (as-deposited, 100, 150 and 200) °C on its structural, surface morphology and optical properties. The films structure was characterized using X-ray diffraction (XRD) which showed that all the films have polycrystalline in nature and orthorhombic structure, with the preferred orientation along the (111) plane. These films was synthesized of very fine crystallites size of (14.8-24.5) nm, the effect of annealing temperatures on the cell parameters, crystallite size and dislocation density were observed.
... Show MoreTransition metal complexes of Co(II) and Ni(II) with azo dye 3,5-dimethyl-2-(4-nitrophenylazo)-phenol derived from 4-nitoaniline and3,5-dimethylphenol were synthesized. Characterization of these compounds has been done on the basis of elemental analysis,electronic data, FT-IR,UV-Vis and 1 HNMR, as well as magnetic susceptibility and conductivity measurements. The nature of thecomplexes formed were studies following the mole ratio and continuous variation methods, Beer ' s law obeyed over a concentrationrange (1x10 -4 - 3x10 -4 M). High molar absorbtivity of the complex solutions were observed. From the analytical data, thestoichiomerty of the complexes has been found to be 1:2 (Metal:ligand). On the basis of physicochemical data tetrahedral
... Show More4-Thiazolidinone were synthesized by three steps,the reaction of ansoyl chloride with 4hydroxy benzaldehyde to give 4-(4`-methoxy benzoyloxy) benzaldehyde[I].The reaction of later compound with thiosemicarbazideled to formation thiosemicarbazon [II] and the reacted thiosemicarbazone with chloro acetic acid in CH3CO2Na medium to yield 4- thiazelidinone compound[III].The 4-thiazolidinone [III]was used as a key intermediates to synthesis new compounds, compound[IV] synthesized from the reaction [III] with acetic anhydride, while the reaction of compound [III] with amines to yield azo compound[V]a,b,c. The azo compound reacted with benzoyl chloride or anisole chloride in basic medium to get a new esters compound[VI]a,b. Also, synthesi
... Show MoreIn this work Study effect of annealing temperature on the Structure
of a-Se and electrical properties of a-Se/c-Si hetrojunction have been
studied.The hetrojunction fabricated by deposition of a-Se film on c-
Si using thermal evaporation.
Electrical properties of a-Se/ c-Si heterojunction include I-V
characteristics, in dark at different annealing temperature and C-V
characteristics are considered in the present work.
C-V characteristics suggested that the fabricated diode was
abrupt type, built in potential determined by extrapolation from
1/C2-V curve. The built - in potential (Vbi) for the Se/ Si System
was found to be increase from 1.21 to 1.62eV with increasing of
annealing temperature
RKASFH Ghanim, Ibn Al -Haitham Journal for pure and applied science, 2017
Binuclear copper, nickel, cobalt, manganese and mercury complexes of the Schiff base H2L (C40H28N2O4) obtained by condensation of 2-benzoyl benzoic acid with benzidine. The Schiff base and their complexes have been subjected to[ FT-IR, elemental analysis ,UV-Vis, 1H and 13C NMR ] spectral studies, molar conductivity, magnetic moment and HPLC measurements. All the complexes showed tetrahedral geometries with the general structure [M2(L)2]. Generality of the synthesized components offer antibacterial efficiency to (Staphylococcu saureus), (Escherichia coli),(Bacillus subtilis) and(Pseudomonas aeruginosa).
Preparation of epoxy/ TiO2 and epoxy/ Al2O3 nanocomposites is studed and investigated in this paper. The nano composites are processed by different nano fillers concentrations (0, 0.01, 0.02 ,0.03, 0.04 ,0.05 ,0.07 and 0.1 wt%). The particles sized of TiO2,Al2O3 are about 20–50 nm.Epoxy resin and nano composites containing different shape nano fillers of (TiO2:Al2O3 composites),are shear mixing with ratio 1 to 1,with different nano hybrid fillers concentrations( 0.025 ,0.0 5 ,0.15 ,0.2, and 0.25 wt%) to Preparation of epoxy/ TiO2- Al2O3 hybrid composites. The mechanical properties of nanocomposites such as bending ,wearing, and fatigue are investigated as mechanical properties.
This work describes, selenium (Se) films were deposited on clean glass substrates by dc planar magnetron sputtering technique.The dependence of sputtering deposition rate of Se film deposited on pressure and DC power has been studied. The optimum argon pressure has range (4x10-1 -8x10-2 )mbar. The optical properties such as absorption coefficient (α) was determined using the absorbance and transmission measurement from UnicoUV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-850 nm. And also we calculated optical constants(refractive index (n), dielectric constant (εi,r), and Extinction coefficient (κ) for selenium films.