In this work, thin films of undoped and Al-doped CdO with (0.5, 1 and 2) wt.%  were prepared by using thermal vacuum evaporation on glass substrate at room  temperature. The optical absorption coefficient (α) of the films was determined from transmittance spectra in the range of wavelength (400-1100) nm. The spectral transmission and the optical energy band gap decrease from 75% and 2.24 eV to 20%  and 2.1 eV respectively depending upon the Al content in the films, also our studies include the calculation of  the optical constants (refractive index, extinction coefficient, real and imaginary part of dielectric constant) as a function of photon energy.  It is evaluated that the optical band gap of

          In this work, the optical emission characteristics of the ZnO plasma were presented. The plasma parameters: electron temperature (T_e), electron density( n_e), plasma frequency (f_p) and Debye length (λ_D) were  studied with  a spectrometer that collects the spectrum ZnO plasma in air produced by Nd:YAG laser,(λ=1064 nm) at ratio X=0.5 in the range of energy of (700-1000 mJ), duration (10 ns). The Boltzmann plot methodwas employed to calculate the electron temperature (T_e), while the Stark broadening  was used to determine the electron density (n_e), Debye duration (λ_D), and plasma frequency (f_p).  T_e, ne, and f_p

Diamond-like carbon (DLC) homogeneous thin films were deposited from cyclohexane (Ccyclohexane (Ccyclohexane (Ccyclohexane (C cyclohexane (Ccyclohexane (Ccyclohexane (C cyclohexane (Ccyclohexane (C 6H12 ) liquid by using a plasma jet system which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with al

      In this paper, the optical emission spectrum (OES) technique was used to analyze the spectrum resulting from the (CdO:CoO)  plasma in air, produced by Nd:YAG laser with λ=1064 nm, τ=10 ns, a focal length of 10 cm, and a range of energy of 200-500 mJ. We identified laser-induced plasma parameters such as electron temperature (T_e) using Boltzmann plot method, density of electron (n_e), length of Debye (λ_D), frequency of plasma (f_p), and number of Debye (N_D), using two-Line-Ratio method. At a mixing ratio of X= 0.5, the (CdO:CoO) plasma spectrum was recorded for different energies. The results of plasma parameters caused by laser showed that, with t

In the present work, pulsed laser deposition (PLD) technique was applied to a pellet of Chromium Oxide (99.999% pure) with 2.5 cm diameter and 3 mm thickness at a pressure of 5 Tons using a Hydraulic piston. The films were deposited using Nd: YAG laser λ= (4664) nm at 600 mJ and 400 number of shot on a glass substrate, The thickness of the film was (107 nm). Structural and morphological analysis showed that the films started to crystallize at annealing temperature greater than 400 oC. Absorbance and transmittance spectra were recorded in the wavelength range (300-
4400) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of d

In this paper, Al and Cu Plasmas that produced by pulsed Nd:YAG laser with fundamental wave length with a pulse duration of 6 nS focused onto Al and Cu targets in atmospheric air are investigated spectroscopically. The influence of pulse laser energy on the some Al and Cu plasmas characteristics was diagnosed by using optical emission spectroscopy for the wavelength range 320-740 nm. The results observed that the increase of pulse laser energy causes to increase all plasma characteristics of both plasmas under study and shown increasing of the emission line intensity. The appearance of the atomic and ionic emission lines of an element in the emission spectrum depends on the ionization energy of target atoms. The plasma characteristics ar

In this work; Silicon dioxide (SiO2) plasma plume was prepared by laser induced plasma (LIP). The electron number density, plasma frequency and Debye length were calculated by reading the data of I-V curve of Langmuir probe which was used as a diagnostic method of measuring plasma properties. Pulsed Nd:YAG laser was used for measuring the electron number density of SiO2 plasma plume under vacuum environment with varying both vacuum pressure and axial distance from the target surface. Some physical properties of the plasma generated such as electron density, plasma frequency and Debye length have been measured experimentally and the effects of vacuum pressure and Langmuir probe distance from the target were studied on those variables. An

This paper addresses the substrate temperature effect on the structure, morphological and optical properties of copper oxide (CuO) thin films deposited by pulsed laser deposition (PLD) method on sapphire substrate of 150nm thickness. The films deposited at two different substrate temperatures (473 and 673)K. The atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and UV-VIS transmission spectroscopy were employed to characterize the size, morphology, crystalline structure and optical properties of the prepared thin films. The surface characteristics were studied by using AFM. It is found that as the substrate temperature increases, the grain size increased but the surface roughness decreased.  The FTIR spec

In this research ,Undoped Nio and 1%Li doped Nio thin films were deposited utilizing chemical spray pyrolysis on the glass substrates heated (450C). The effects of non-thermal plasma on the structural and optical properties were studied. XRD measurement shows that Nio and Nio:1%Li films were found to be polycrystalline and have cubic structure with a preferred orientation (111). Decreased crystal size after exposure especially at (7) sec. AFM data indicate that the surface roughness average and (RMS) values of the prepared doped films are increasing after exposure to plasma, the transmittance increases after doped samples exposure to plasma, it was found that the energy gap value decreased when doped samples exposure to plasma, also, thickn