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Analytical Study of near Mobility Edge Density of States of Hydrogenated Amorphous Silicon

Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method. It is found that the density of states of the valence band and the conduction band can be fitted to a simple power law, with a power index 0.60 near the valence band edge, and 0.55 near the conduction band edge. These results indicate a modest but noticeable deviation from the square root law (power index=0.5) which is found in crystalline semiconductors. Analysis of Jackson et al density of states integral J(E) data over about (1.4 eV) of photon energy range, showed a significant fit to a simple power law with a power index of 2.11 close to that predicted from the density of states fitting results 2.15

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Publication Date
Thu Nov 17 2016
Journal Name
Plos One
Efficient and Stable Routing Algorithm Based on User Mobility and Node Density in Urban Vehicular Network

Vehicular ad hoc networks (VANETs) are considered an emerging technology in the industrial and educational fields. This technology is essential in the deployment of the intelligent transportation system, which is targeted to improve safety and efficiency of traffic. The implementation of VANETs can be effectively executed by transmitting data among vehicles with the use of multiple hops. However, the intrinsic characteristics of VANETs, such as its dynamic network topology and intermittent connectivity, limit data delivery. One particular challenge of this network is the possibility that the contributing node may only remain in the network for a limited time. Hence, to prevent data loss from that node, the information must reach the destina

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Publication Date
Sat Apr 01 2023
Journal Name
Baghdad Science Journal
A Study of a-Si:H Absorption Edge Using Dunstan’s Model

The optical absorption data of Hydrogenated Amorphous Silicon was analyzed using a Dunstan model of optical absorption in amorphous semiconductors. This model introduces disorder into the band-band absorption through a linear exponential distribution of local energy gaps, and it accounts for both the Urbach and Tauc regions of the optical absorption edge.Compared to other models of similar bases, such as the O’Leary and Guerra models, it is simpler to understand mathematically and has a physical meaning. The optical absorption data of Jackson et al and Maurer et al were successfully interpreted using Dunstan’s model. Useful physical parameters are extracted especially the band to the band energy gap , which is the energy gap in the a

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Publication Date
Tue Aug 31 2021
Journal Name
Iraqi Journal Of Science
A Comparative Study of Potential Energy Curves Analytical Representations for CO, N2, P2, and ScF in Their Ground Electronic States

     In this study, a detailed comparative analysis of four different potential energy functions is elaborated. These potential energy functions namely are Morse, Deng-Fan, Varshni, and Lennard-Jones. Furthermore, a mathematical representation for long-range region is elucidated. As a study case, four diatomic molecules (CO, N2, P2, and ScF) in their electronic ground states were chosen. Subsequently, the corresponding dissociation energy as well as some spectroscopic parameters were calculated accordingly.

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Publication Date
Thu Jun 08 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Studying Hueckel Edge Detector Using Binary Step Edge Image

Hueckel edge detector study using binary step edge image is presented. The standard algorithm that Hueckel presented, in his paper without any alteration is adopted. This paper studies a fully analysis for the algorithm efficiency, time consuming and the expected results with slide window size and edge direction. An analysis for its behavior with the changing of the slide window size (disk size) is presented. The best result is acquired when the window size equals to four pixel.  

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Publication Date
Fri Apr 01 2022
Journal Name
Chalcogenide Letters
The dependence of the energy density states on the substitution of chemical elements in the Se6Te4-xSbx thin film

The energy density state are the powerful factor for evaluate the validity of a material in any application. This research focused on examining the electrical properties of the Se6Te4- xSbx glass semiconductor with x=1, 2 and 3, using the thermal evaporation technique. D.C electrical conductivity was used by determine the current, voltage and temperatures, where the electrical conductivity was studied as a function of temperature and the mechanical electrical conduction were determined in the different conduction regions (the extended and localized area and at the Fermi level). In addition, the density of the energy states in these regions is calculated using the mathematical equations. The constants of energy density states are det

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Publication Date
Wed Sep 20 2023
Journal Name
Chalcogenide Letters
Calculation of the localized and extended energy states density for Ge60Se40-xTex alloy prepared by melting point method

The DC electrical conductivity properties of Ge60Se40-xTex alloy with x = 0, 5, 10, 15 and 20). The samples were formed in the form of discs with the thickness of 0.25–0.30 cm and the diameter of 1.5 cm. Samples were pressed under a pressure of 6 tons per cm2 , using a ton hydraulic press. They were prepared after being pressed using a ton hydraulic press using a hydraulic press. Melting point technology use to preper the samples. Continuous electrical conductivity properties were recorded from room temperature to 475 K. Experimental data indicates that glass containing 15% Te has the highest electrical conductivity allowing maximum current through the sample compared to Lu with other samples. Therefore, it is found that the DC co

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Publication Date
Tue Jan 25 2022
Journal Name
Iraqi Journal Of Science
A Modified Segmentation Approach for Real World Images Based on Edge Density Associated with Image Contrast Stretching

Segmentation of real world images considered as one of the most challenging tasks in the computer vision field due to several issues that associated with this kind of images such as high interference between object foreground and background, complicated objects and the pixels intensities of the object and background are almost similar in some cases. This research has introduced a modified adaptive segmentation process with image contrast stretching namely Gamma Stretching to improve the segmentation problem. The iterative segmentation process based on the proposed criteria has given the flexibility to the segmentation process in finding the suitable region of interest. As well as, the using of Gamma stretching will help in separating the

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Publication Date
Fri Jun 30 2023
Journal Name
Iraqi Journal Of Science
Electron Density Estimation by Electrostatic Probe for Plasma Generated Near the Spacecraft Returning to the Earth's Atmosphere

     In this work, the electrostatic probe was utilized to estimate the density of electrons for plasma generated around reentry vehicles that have a geometrically blunt nose at high-altitude. The thermocouple uses to measured electron temperature, which is equal to the temperature of the gas, on board the MAC spacecraft. In the spacecraft backflow field, electrostatic probe measurements were taken at five separate regions 1 to 5 cm from the body of the spacecraft. Over an altitude range of 90 to 50 km with an electron density of 108 to 1012 1/cm3, respectively. The measured electron temperature ranged from 0.05 to 0.9 electron volts and the maximum re-entry velocity of the spacecraft was about 7048 m

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Publication Date
Tue Dec 01 2009
Journal Name
Iraqi Journal Of Physics
Study of the Electronic Properties and Hall Effect of Amorphous Si1-xGex:H Thin Films

The electronic properties and Hall effect of thin amorphous Si1-xGex:H films of thickness (350 nm) have been studied such as dc conductivity, activation energy, Hall coefficient under magnetic field (0.257 Tesla) for measuring carrier density of electrons and holes and Hall mobility as a function of germanium content (x = 0–1), deposition temperature (303-503) K and dopant concentration for Al and As in the range (0-3.5)%. The composition of the alloys and films were determined by using energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS).
This study showed that dc conductivity of a-Si1-xGex:H thin films is found to increase with increasing Ge content and dopant concentration, whereas conductivity activati

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Publication Date
Tue Dec 01 2009
Journal Name
Iraqi Journal Of Physics
The Calculation of the Charge Density Distributions and the Longitudinal Form Factors of 10 B Nucleus by Using the Occupation Numbers of the States

The charge density distributions of 10 B nucleus are calculated using the
harmonic oscillator wave functions. Elastic and inelastic electron scattering
longitudinal form factors have been calculated for the similar parity states of 10B
nucleus where a core of 4He is assumed and the remaining particles are
distributed over 3/ 2 1p and 1/ 2 1p orbits which form the model space.
Core-polarization effects are taken into account. Core-polarization effects are
calculated by using Tassie model and gives good agreement with the measured
data.

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