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Analytical Study of near Mobility Edge Density of States of Hydrogenated Amorphous Silicon
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Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method. It is found that the density of states of the valence band and the conduction band can be fitted to a simple power law, with a power index 0.60 near the valence band edge, and 0.55 near the conduction band edge. These results indicate a modest but noticeable deviation from the square root law (power index=0.5) which is found in crystalline semiconductors. Analysis of Jackson et al density of states integral J(E) data over about (1.4 eV) of photon energy range, showed a significant fit to a simple power law with a power index of 2.11 close to that predicted from the density of states fitting results 2.15

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Publication Date
Tue May 01 2018
Journal Name
Iop Conference Series: Materials Science And Engineering
Evaluation of Electromagnetic Near-Field Measurement Technique as Non-Destructive Testing for Composite Structures
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Publication Date
Fri Feb 01 2019
Journal Name
Construction And Building Materials
Utilization of magnetic water in cementitious adhesive for near-surface mounted CFRP strengthening system
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Cement-based adhesive (CBA) is used as a bonding agent in Carbon Fibre Reinforced Polymer (CFRP) applications as an alternative to epoxy-based adhesive due to the drawbacks of the epoxy system under severe service conditions which negatively affect the bond between the CFRP and strengthened elements. This paper reports the results of, an investigation carried out to develop two types of CBA using magnetized water (MW) for mixing and curing. Two magnetic devices (MD-I and MD-II), with different magnetic field strengths (9000 and 6000 Gauss) respectively, were employed for water magnetization. Different water flows with different water circulation times in the magnetizer were used for each device. Compressive and splitting tensile strength te

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Publication Date
Mon Sep 30 2024
Journal Name
Nuclear Physics And Atomic Energy
Relativistic mean field analysis of triaxial deformation for nuclei near the neutron drip line
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The present study focuses on the deformation of neutron-rich nuclei near the neutron drip line. The nuclei of interest include 28O, 42Si, 58Ca, 80Ni, 100Kr, 122Ru, 152Ba, 166Sm, and 176Er. The relativistic Hartree - Bogoliubov (RHB) approach with effective density-dependent point coupling is utilized to investigate the triaxial deformation, and Skyrme - Hartree - Fock + Bardeen - Cooper - Schrieffer is used to analyze the axial deformation. The study aimed to understand the interplay between nuclear forces, particle interactions, and shell structure to gain insights into the unique behavior of neutron-rich nuclei. Despite these nuclei containing magic numbers, their shapes are still affected by the nucleons' collective behavior and

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Publication Date
Sat Dec 01 2018
Journal Name
Proceedings Of International Structural Engineering And Construction
ON THE REDUCTION OF PRESTRESSING FORCE NEAR SUPPORTS IN PARTIALLY PRESTRESSED CONCRETE FLEXURAL MEMBERS
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Straight tendons in pretensioned members can cause high-tensile stresses in the concrete extreme fibers at end sections because of the absence of the bending stresses due to self-weight and superimposed loads and the dominance of the moment due to prestressing force alone. Accordingly, the concrete tensile stresses at the ends of a member prestressed with straight tendons may limit the service load capacity of the member. It is therefore important to establish limiting zone in the concrete section within which the prestressing force can be applied without causing tension in the extreme concrete fibers. Two practical methods are available to reduce the stresses at the end sections due to the prestressing force. The first method based

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Publication Date
Mon Feb 25 2019
Journal Name
Iraqi Journal Of Physics
The nuclear level density parameter
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The nuclear level density parameter  in non Equi-Spacing Model (NON-ESM), Equi-Spacing Model (ESM) and the Backshifted Energy Dependent Fermi Gas model (BSEDFG) was determined for 106 nuclei; the results are tabulated and compared with the experimental works. It was found that there are no recognizable differences between our results and the experimental -values. The calculated level density parameters have been used in computing the state density as a function of the excitation energies for 58Fe and 246Cm nuclei. The results are in a good agreement with the experimental results from earlier published work.

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Publication Date
Sun Feb 24 2019
Journal Name
Iraqi Journal Of Physics
Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon
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In this paper, CdO nanoparticles prepared by pulsed laser deposition techniqueonto a porous silicon (PS) surface prepared by electrochemical etching of p-type silicon wafer with resistivity (1.5-4Ω.cm) in hydrofluoric (HF) acid of 20% concentration. Current density (15 mA/cm2) and etching times (20min). The films were characterized by the measurement of AFM, FTIR spectroscopy and electrical properties.

  Atomic Force microscopy confirms the nanometric size.Chemical components during the electrochemical etching show on surface of PSchanges take place in the spectrum of CdO deposited PS when compared to as-anodized PS.

The electrical properties of prepared PS; namely current density-voltage charact

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Publication Date
Thu Oct 15 2015
Journal Name
Journal Of Physical Vapor Deposition Science And Technology (jpvdst)
Physical Properties of Nanostructured Silicon Dioxide Prepared by Pulsed-Laser Deposition
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Publication Date
Mon Jun 01 2020
Journal Name
Iraqi Journal Of Physics
Prospect of CW Raman Laser in Silicon- on- Insulator Nano-Waveguides
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Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimen
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Publication Date
Tue Sep 11 2018
Journal Name
Iraqi Journal Of Physics
Responsivity of porous silicon for blue visible light with high sensitivity
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In this work, porous silicon (PS) are fabricated using electrochemical etching (ECE) process for p-type crystalline silicon (c-Si) wafers of (100) orientation. The structural, morphological and electrical properties of PS synthesized at etching current density of (10, 20, 30) mA/cm2 at constant etching time 10 min are studied. From X-ray diffraction (XRD) measurement, the value of FWHM is in general decreases with increasing current density for p-type porous silicon (p-PS). Atomic force microscope (AFM) showed that for p-PS the average pore diameter decreases at 20 mA. Porous silicon which formed on silicon will be a junction so I-V characteristics have been studied in the dark to calculate ideality factor (n), and saturation current (Is

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Publication Date
Mon Jan 01 2024
Journal Name
Baghdad Science Journal
Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide
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          The use of silicon carbide is increasing significantly in the fields of research and technology. Topological indices enable data gathering on algebraic graphs and provide a mathematical framework for analyzing the chemical structural characteristics. In this paper, well-known degree-based topological indices are used to analyze the chemical structures of silicon carbides. To evaluate the features of various chemical or non-chemical networks, a variety of topological indices are defined. In this paper, a new concept related to the degree of the graph called "bi-distance" is introduced, which is used to calculate all the additive as well as multiplicative degree-based indices for the isomer of silicon carbide, Si2

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