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Study of Some Structural and Optical Properties of AgAlSe2 Thin Films
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The structural properties of ternary chalcopyrite AgAlSe2 compound alloys and thin films that prepared by the thermal evaporation method at room temperature on glass substrate with a deposition rate (5±0.1) nm s-1 for different values of thickness (250,500 and 750±20) nm, have been studied, using X-ray diffraction technology. As well as, the optical properties of the prepared films have been investigated. The structural investigated shows that the alloy has polycrystalline structure of tetragonal type with preferential orientation (112), while the films have amorphous structure. Optical measurement shows that AgAlSe2 films have high absorption in the range of wavelength (350-700 nm). The optical energy gap for allowed direct transition were evaluated, which decreases with film thickness increasing, i.e. it decreases from 2.5 eV to 2.2 eV when thickness varies from 250±20 nm to 750±20 nm.

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Publication Date
Sun Jan 01 2012
Journal Name
Aip Conference Proceedings
The electrical conductivity and thermoelectric power dependence on the thicknesses for thermally deposited thin CdS films
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Publication Date
Thu Mar 01 2012
Journal Name
Advances In Materials Physics And Chemistry
Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device
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ABSTRACT Porous silicon has been produced in this work by photochemical etching process (PC). The irradiation has been achieved using ordinary light source (150250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.

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Publication Date
Mon Nov 06 2017
Journal Name
International Conference On Technologies And Materials For Renewable Energy, Environment And Sustainability, Tmrees17, 21-24 April 2017, Beirut Lebanon
HgBa2 Can-1CunO2n+2+δ Superconducting thin films Prepared by Pulsed Laser Deposition
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In the present work, HgBa2Can-1CunO2n+2+δ superconducting thin films with (100) nm thickness were (n=1, 2 and 3) prepared by Pulsed Laser Deposition technique on glass substrate at R.T (300) K, have been synthesize. The effect of Cu content on the structural, surface morphology, optical and electrical properties of HgBa2Can-1CunO2n+2+δ films were investigated and analyzed. The results of XRD analysis show that all samples are polycrystalline structure with orthorhombic phase, the change of Cu concentration in samples produce changes in the mass density, lattice parameter and the ratio (c/a). AFM techniques were used to examine the surface morphology of HgBa2Can-1CunO2n+2+δ superconducting films, the study showed the values of surface rou

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Publication Date
Tue Sep 01 2020
Journal Name
International Journal Of Hydrogen Energy
Hydrogen gas sensing based on nanocrystalline SnO2 thin films operating at low temperatures
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Publication Date
Tue Oct 02 2018
Journal Name
Iraqi Journal Of Physics
Gas sensitivity properties of TiO2/Ag nanocomposite films prepared by pulse laser deposition
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In this study, a double frequency Q-switching Nd:YAG laser beam (1064 nm and λ= 532 nm, repetition rate 6 Hz and the pulse duration 10ns) have been used, to deposit TiO2 pure and nanocomposites thin films with noble metal (Ag) at various concentration ratios of (0, 10, 20, 30, 40 and 50 wt.%) on glass and p-Si wafer (111) substrates using Pulse Laser Deposition (PLD) technique. Many growth parameters have been considered to specify the optimum condition, namely substrate temperature (300˚C), oxygen pressure (2.8×10-4 mbar), laser energy (700) mJ and the number of laser shots was 400 pulses with thickness of about 170 nm. The surface morphology of the thin films has been studied by using atomic force microscopes (AFM). The Root Mean Sq

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Publication Date
Thu Jan 24 2019
Journal Name
Journal Of Engineering And Applied Sciences
Investigation of the Optical and Electrical Properties of Composites of PVA-PVP-PEG/ZnO Nanoparticles
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Publication Date
Mon Jan 01 2018
Journal Name
Journal Of Engineering And Applied Sciences
sEffect of Sb doping on CuAlSe2 thin films and their behavior on the preparation CuAlSe2/Si heterojunction solar cells
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Publication Date
Tue Jul 01 2025
Journal Name
Iraqi Journal Of Scientific And Industrial Research
Surface Morphology and Elemental Analysis of Al2O3 Thin Films Prepared by DC Reactive Sputtering Technique Using Different Gas Mixtures
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In this study, Al2O3 thin films were prepared by dc reactive sputtering technique using different gas mixtures of argon and oxygen gases (90:10, 70:30, 50:50, 30:70, and 10:90). These films were characterized to introduce their surface morphology and elemental composition as functions of the oxygen content in the gas mixture. The gas mixing ratio plays a crucial role in controlling the nanoscale morphology of the prepared thin films. The [Al]/[O] ratio varies non-linearly with the Ar:O2​ mixing ratio. Increasing the oxygen content leads to a progressive decrease in surface roughness, resulting in smoother and more uniform films with finer granular features. These results presented herein are useful to optimize the sputtering process to ac

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Publication Date
Fri Jan 01 2021
Journal Name
Aip Conference Proceedings
Preparation and characterization of mawsonite Cu6Fe2SnS8 [CFTS] thin films via the semi-computerized spray pyrolysis technique for photovoltaic applications
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Publication Date
Sun Dec 08 2019
Journal Name
Journal Of Global Pharma Technology
Effect of Functionalized Graphene Oxide (FGO) on the Electrical and Dielectrical Properties of PVA Films
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In the present work, nanocomposite of poly (vinyl alcohol) (PVA) incorporated with functionalized graphene oxide (FGO) were fabricated using casting method. PVA was dispersed by varying content of FGO (0.3, 0.5, 0.8, 1 wt %). The PVA- FGO nanocomposite was characterized by FT‐IR, FE-SEM and XRD. Frequency dependence of real permittivity (ε’), imaginary (ε’’) and a.c conductivity of PVA/FGO and PVA/GO nanocomposite were studied in the frequency range 100 Hz- 1 MHz. The experimental results showed that the values of real (ε’) and imaginary permittivity (ε’’) increased dramatically by increasing the FGO content in PVA matrix. PVA/ FGO (1 wt %) nanocomposite revealed higher electrical conductivity of 6.4×10-4 Sm-1 compared to

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