In this work, the plasma parameters (electron temperature and
electron density) were determined by optical emission spectroscopy
(OES) produced by the RF magnetron Zn plasma produced by
oxygen and argon at different working pressure. The spectrum was
recorded by spectrometer supplied with CCD camera, computer and
NIST standard of neutral and ionic lines of Zn, argon and oxygen.
The effects of pressure on plasma parameters were studied and a
comparison between the two gasses was made.

Thin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide materials, paly an essential role in solar energy conversion market. In this paper, transition metals with chalcogenide Nickel selenide termed as (NiSe₂/Si) are synthesized. To this end, polycrystalline NiSe₂ thin films are deposited through the use of vacuum evaporation technique under vacuum of 2.1x10^-5 mbar, which are supplied to different annealing temperatures. The results show that under an annealed temperature of 525 K,

Photodetector based on Rutile and Anatase TiO₂ nanostructures/n-Si Heterojunction

The CIGS/CdS p-n junction thin films were fabricated and deposited at room temperature with rate of deposition 5, and 6 nm secG1 , on ITO glass substrates with 1mm thickness by thermal evaporation technique at high vacuum pressure 2×10G5 mbar, with area of 1 cm2 and Aluminum electrode as back contact. The thickness of absorber layer (CIGS) was 1 µm while the thickness of the window layer CdS film was 300 nm. The X-ray Diffraction results have shown that all thin films were polycrystalline with orientation of 112 and 211 for CIGS thin films and 111 for CdS films. The direct energy gaps for CIGS and CdS thin films were 1.85 and 2.4 eV, respectively. Atomic Force Microscopy measurement proves that both films CIGS and CdS films have nanostru

Ti6Al4V thin film was prepared on glass substrate by RF
sputtering method. The effect of RF power on the optical properties
of the thin films has been investigated using UV-visible
Spectrophotometer. It's found that the absorbance and the extinction
coefficient (k) for deposited thin films increase with increasing
applied power, while another parameters such as dielectric constant
and refractive index decrease with increasing RF power.

A newly flow injection-turbidimetric method characterized by it is speed and sensitivity has been developed for the determination of Amiloride in pure and pharmaceutical preparations. It is based on the formation of yellowish white precipitate for the Amiloride-phosphomolybidic acid ion pair in aqueous medium. Turbidity was measured by Ayah 6Sx1-T-1D solar cell CFI analyser via the attenuation of incident light from the surfaces precipitated particles at 0-180. The Chemical and physical parameters were investigated. Linear dynamic range for the attenuation of incident light versus Amiloride concentration was of 0.005-10 mmol.L-1, with the correlation coefficient (r) of 0.9986 , while the percentage linearity (r2%) was 99.71%. The L.O.

A newly flow injection-turbidimetric method characterized by it is speed and sensitivity has been developed for the determination of Amiloride in pure and pharmaceutical preparations. It is based on the formation of yellowish white precipitate for the Amiloride-phosphomolybidic acid ion pair in aqueous medium. Turbidity was measured by Ayah 6Sx1-T-1D solar cell CFI analyser via the attenuation of incident light from the surfaces precipitated particles at 0-180. The Chemical and physical parameters were investigated. Linear dynamic range for the attenuation of incident light versus Amiloride concentration was of 0.005-10 mmol.L-1, with the correlation coefficient (r) of 0.9986 , while the percentage linearity (r2%) was 99.71%. The L.O.