The purpose of the current work was to evaluate the effect of Radiation of Gamma on the superconducting characteristics of the compound PbBr2Ca1.9Sb0.1Cu3O8+δ utilizing a 137Cs source at doses of 10, 15, and 20MRad. Solid state reaction technology was used to prepare the samples. Before and after irradiation, X-ray diffraction (XRD) and superconductor properties were examined. Results indicated that the tetragonal structure of our chemical corresponds to the Pb-1223 phase with an increase in the ratio c/a as a result of gamma irradiation. (Tc (onset) ) and on set temperature Tc (offset)) were also dropping from 113 to the 85.6 K and 129.5 to 97 K, respectively, for a transition temperatu
Obliquely deposited (70o) Bi, Sb, and Bi-Sb alloy thin films have been prepared by thermal
resistive technique. Structural properties of these films were studied using XRD. Their resistance and
voltage responsivity for Nd:YAG and CO2 laser pulses have been recorded as function of operating
temperature between 10 oC and 120 oC. It was found that the maximum responsivity for these detectors
can be obtained at 75 oC. On the other hand, the dependence of responsivity on the width of detectors was
investigated.
This work is devoted to define new generalized gamma and beta functions involving the recently suggested seven-parameter Mittag-Leffler function, followed by a review of all related special cases. In addition, necessary investigations are affirmed for the new generalized beta function, including, Mellin transform, differential formulas, integral representations, and essential summation relations. Furthermore, crucial statistical application has been realized for the new generalized beta function.
In this paper, we prove that; Let M be a 2-torsion free semiprime which satisfies the condition for all and α, β . Consider that as an additive mapping such that holds for all and α , then T is a left and right centralizer.
In this study, the electron energy distribution function (EEDF), the electron swarm parameters , the effective ionization coefficients, and the critical field strength (dielectric strength) in binary He-H2 gas mixture which is used as cryogenic for high-temperature superconducting power applications, are evaluated using two-term solution of the Boltzmann equation over the range of E/N ( the electric field to gas density) from 1 to 100 Td ( 1 Td=10-17 Vcm2) at temperature 77 K and pressure 2MPa, taking into account elastic ( momentum transfer) and inelastic cross-sections. Using the electron energy distribution function (EEDF) electron swarm parameters (electron drift velocity, mean electron e
... Show MoreA new Schiffbase derivative ligands [H4L1] and [H2L2] have been produced by condensed ophathaldehyde with ethylene diamine and [N1, N1'E, N1, N1'E)-N1, N1'-(1, 2-phenylenebis (methan-1-yl- 1ylidene)) diethane-1, 2-diamine] with 2-benzoyl benzoic acid. Schiffbase ligands have been separated and categorized by 1H, 13 C-NMR, (CHN) elemental analysis, UV-visible, mass spectroscopy and FTIR methods. Ten new coordination complexes were prepared and structurally diagnosed: [M(L1)Cl2] and [M2(L2)Cl2] where M(II) = Mn (II), Co(II), Ni(II), Cu(II) and Hg(II). The complexes have been typified by FTIR, UV-visble atomic absorption, molar conductance elemental analysis, and magnetic susceptibility. The details of the ligand (H4L1) compounds are getting a
... Show MoreThe thermal evaporation technique was used to prepare the Ni-Cr films with a thickness of 200 nm and a rate of deposition of 0.22nm/Sec. The annealing was performed at 373 and 473 K. The structural and optical analyses of the grown layers were achieved and XRD patterns showed amorphous structure transferred to polycrystalline for film annealed at 373 and 473 K. AFM analysis showed that the surface of Ni-Cr films is homogenous and the average roughness, optical energy gap and absorption coefficient were increased with increasing annealing temperature (Ta).
Porous silicon (P-Si) has been produced in this work by photoelectrochemical (PEC) etching process. The irradiation has been achieved using diode laser of (2 W) power and 810 nm wavelength. The influence of various irradiation times on the properties of P-Si material such as P-Si layer thickness, surface aspect, pore diameter and the thickness of walls between pores as well as porosity and etching rate was investigated by depending on the scanning electron micrograph (SEM) technique and gravimetric measurements.
Background: Extensive reports denote the biological role of trace elements (Cu Zn ", Se ') in many various physiological and pathological conditions, one of the list is shown to be Behcet's disease (BD).The aim of this study was directed towards the distribution of trace elements (Cu 2,Zn, 2,Se 2) in sera of BD patients, and control groups.
Methods: Fifty Arab Iraqi patients who fulfdled the ISO criteria for diagnosis BD.compared with 21 patients control with recurrent oral ulcer (ROU), healthy control groups (2Ihealthy relative and 21healthy volunteer). Typing HLA Class I was carried out at Alkarama hospital, by using microlympho-cytotoxicity test. The concentrations of serum Cu ', Zn ", and Se" were determined by atomic absorption s
The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.