This research is devoted to the effect of investigation of the ZnO content on the structural and electrical properties of (NiO)1-x (ZnO)x films prepared by pulsed laser precipitation on the glass substrate at room temperature. Thin-film (NiO)1-x (ZnO)x sediments were deposited with different composition ratios where x = 0, 0.2, 0.4, 0.6 and 1.0 with a thickness of n150nm. The diffraction pattern for X-ray analysis reveals that the structure of the prepared thin films is identical with the cubic phase and hexadecimal stage of x = 0 and 0.1, respectively while the structure is mixed with the remaining x value from both stages. It involves studying the conductivity versus temperature to estimate conduction mechanisms and the Hall effect for determining type and carrier concentration as well as movement values. The results showed that there are two connection mechanisms and thus activation energies. Hall Effect showed that most of the prepared thin films were converted from type p to n of type x at = 0.2 and 1.0. Concentration of the carrier increases twice the volume while the mobility decreases by two degrees of volume by increasing the ZnO content from 0.0 to 1.0. The results were explained in terms of variation in the size of the crystals by increasing the ZnO content in the prepared thin films.
In this study, the melting-cooling method was used to prepare the chalcogenide compound S60-Se40-X-PbX. Four samples were obtained by partial replacement of Selenium with Lead in the weight ratios x = 0, 10, 20, and 30, respectively. The materials were mixed separately, ground, placed in quartz ampoules, and heated to 500 degrees Celsius. After conducting several operations on the samples, their insulating properties were studied, represented by the real dielectric constant and the imaginary dielectric constant, and the electrical conductivity was measured as a function of the frequency. It was found that partial replacement plays an impo
This study includes the manufacture of four ternary alloys represented S60Se40-XPbX with weight ratios x = 0, 10, 20, and 30 by the melting point method. The components of each alloy were mixed separately, then placed in quartz ampoules and vacuumed out with a vacuum of roger that 10−4 Torr. The ampule was heated in two stages to avoid sudden dissipation and precipitation of selenium on the inner mass of the quartz tube. The ampoule was gradually heated and kept at 450°C for approximately 4 hours followed by 950°C for 10 hours.at a rate of 10 degrees Celsius, the temperature of the electric furnace
The compound Fe0.5CoxMg0.95-xO where (x= 0.025, 0.05, 0.075, 0.1) was prepared via the sol-gel technique. The crystalline nature of magnesium oxide was studied by X-ray powder diffraction (XRD) analysis, and the size of the sample crystals, ranging between (16.91-19.62nm), increased, while the lattice constant within the band (0.5337-0.4738 nm) decreased with increasing the cobalt concentration. The morphology of the specimens was studied by scanning electron microscopy (SEM) which shows images forming spherical granules in addition to the presence of interconnected chips. The presence of the elements involved in the super
Superconducting compound Bi2Sr2-xYxCa2Cu3O10+δ were Synthesized by method of solid state reaction, at 1033 K for 160 hours temperature of the sintering at normal atmospheric pressure where substitutions Yttrium oxide with Strontium. When Y2O3 concentration (0.0, 0.1, 0.2, 0.3, 0.4 and 0.5). All specimens of Bi2Sr2Ca2Cu3O10+δ superconducting compounds were examined. The resistivity of electrical was checked by the four point probe technique, It was found th
In this paper deals with the effect laser irradiation on the optical properties of cobalt oxide (CoO2) thin films and that was prepared using semi computerized spray pyrolysis technique. The films deposited on glass substrate using such as an ideal value concentration of (0.02)M with a total volume of 100 ml. With substrate temperature was (350 C), spray rate (15 ml/min).The XRD diffraction given polycrystalline nature with Crystal system trigonal (hexagonal axes). The obtained films were irradiated by continuous green laser (532.8 nm) with power 140 mW for different time periods is 10 min,20min and 30min. The result was that the optical properties of cobalt oxide thin films affe
The existing investigation explains the consequence of irradiation of violet laser on the structure properties of MawsoniteCu6Fe2SnS8 [CFTS] thin films. The film was equipped by the utilization of semi-computerized spray pyrolysis technique (SCSPT), it is the first time that this technique is used in the preparation and irradiation using a laser. when the received films were processed by continuous red laser (700 nm) with power (>1000mW) for different laser irradiation time using different number of times a laser scan (0, 6, 9, 12, 15 and 18 times) with total irradiation time (0,30,45,60,75,90 min) respectively at room temperature.. The XRD diffraction gave polycrysta
... Show Moresix specimens of the Hg0.5Pb0.5Ba2Ca2Cu3-y
The non-linear components has been emphasized for its multiple applications in rewritable recording and data storage devices. Chalcogenide glasses materials are promising due to their high refractive index. In this paper, alloys for Ge30Te70-xSbxglasses semiconductor (where x =0.0, 5, 10, 15 and 20) will be fabricated by melt quenching method. The effect of partial substitution on DC electric power parameters, and its knowledge of electrical conduction mechanisms, were investigated to determine the effect of Antimony on the density of extended states, local states, and in Fermi energy states. The electrical measurements revealed the existence of three conduction mechanis
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