A study of the Electrical and Dialectical proprieties of S60-Se40-X-PbXChalcogenide Compound

doi:10.1088/1742-6596/2754/1/012027

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Publication Date

Wed May 01 2024

Journal Name

Journal Of Physics: Conference Series

Volume

2754

Issue Number

1

DOI

10.1088/1742-6596/2754/1/012027

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A study of the Electrical and Dialectical proprieties of S60-Se40-X-PbXChalcogenide Compound

electrical conductivity

imaginary dielectric constant

insulating properties

partial replacement

real dielectric constant

solid-state reaction

Mohamed Muthana

Kareem A.Jasim

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AbstractIn this study, the melting-cooling method was used to prepare the chalcogenide compound S60-Se40-X-PbX. Four samples were obtained by partial replacement of Selenium with Lead in the weight ratios x = 0, 10, 20, and 30, respectively. The materials were mixed separately, ground, placed in quartz ampoules, and heated to 500 degrees Celsius. After conducting several operations on the samples, their insulating properties were studied, represented by the real dielectric constant and the imaginary dielectric constant, and the electrical conductivity was measured as a function of the frequency. It was found that partial replacement plays an important role in enhancing the insulating properties. It was found that partial replacement of selenium with lead led to a change in the insulating properties and alternating electrical conductivity.

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Publication Date

Tue Oct 01 2024

Journal Name

Journal Of Physics: Conference Series

An investigation into the implications of partial substitution of selenium with lead on the thermal properties for S60Se40-XPbX Chalcogenide Compound

Engineering controlled terms Electric arc furnaces

Glass manufacture

Lead alloys

Melting point

Selenium compounds Engineering uncontrolled terms 950° C

Chalcogenide compound

Melting point method

Partial substitution

Property

Quartz ampoule

Quartz tubes

Rapid cooling

Thermal

Weight ratios Engineering main heading Heat flux

Kareem

Mohamed

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AbstractThis study includes the manufacture of four ternary alloys represented S60Se40-XPbX with weight ratios x = 0, 10, 20, and 30 by the melting point method. The components of each alloy were mixed separately, then placed in quartz ampoules and vacuumed out with a vacuum of roger that 10−4 Torr. The ampule was heated in two stages to avoid sudden dissipation and precipitation of selenium on the inner mass of the quartz tube. The ampoule was gradually heated and kept at 450°C for approximately 4 hours followed by 950°C for 10 hours.at a rate of 10 degrees Celsius, the temperature of the electric furnace ... Show More

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Publication Date

Mon Jul 01 2019

Journal Name

Journal Of Physics: Conference Series

Electrical Properties of AgSb(SxSe1-x)2 Thin Films

Bushra A.

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Alloys from AgSb(SxSe1-x)2 with different compositions were prepared using quenching from the melt . This was done by put the appropriate amount of Ag, Sb,S and Se in an evaluated quartz ampoule , sealed and left at oven in temperature 1273 for 5 hours. Thin films with different composition were deposited by pulsed deposition technique PLD onto glass substrates at ambient temperature . This paper concerned on the investigate effect of composition on structural morphology, and electrical properties. The structure and morphology of the prepoared thin films were checked using X–ray diffraction and atomic force microscope. The D.C conductivity of the AgSb(SxSe1-x)2thin films with various x content was measured

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Publication Date

Tue May 12 2026

Journal Name

Canadian Metallurgical Quarterly

Investigation of Te 50 Se 50-x Sn x alloys’ structural and electrical characteristics

Marwa Mohammed

Nidhal Saleh

Imad H.

Kareem Ali

Mohammad Ghaffar

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Publication Date

Sun Nov 01 2020

Journal Name

Iop Conference Series: Materials Science And Engineering

Dielectric properties and A.C electrical conductivity analysis of (La2O3)1-x(ZnO)x

a.c conductivity

dielectric constant

(La2O3)1-x(ZnO)

Bushra A.

Hiba H.

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SummeryThe A.C conductivity of three samples of lanthanide oxide : zinc oxide (La2O3)1-x(ZnO)x pellets with different zinc oxide content which were sintered 1273 K temperatures were studied using LRC meters in the frequency range of 50–106 Hz at temperature of 30 °C. The a.c conductivity, was analyzed depending of the universal power law proposed by Jonsher,. The slope of the relation between logarithm of a.c conductivity and angular frequency represent the s value were in the range (0.44-0.77) which found to increase by increasing of zinc oxide content which coincided with the small po ... Show More

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Publication Date

Sat May 01 2021

Journal Name

Journal Of Physics: Conference Series

The substitutions of Strontium by yttrium and their effects on Bi2Sr2-xYxCa2Cu3O10+δ superconducting compound

Laheeb A.

Kareem A.

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AbstractSuperconducting compound Bi2Sr2-xYxCa2Cu3O10+δ were Synthesized by method of solid state reaction, at 1033 K for 160 hours temperature of the sintering at normal atmospheric pressure where substitutions Yttrium oxide with Strontium. When Y2O3 concentration (0.0, 0.1, 0.2, 0.3, 0.4 and 0.5). All specimens of Bi2Sr2Ca2Cu3O10+δ superconducting compounds were examined. The resistivity of electrical was checked by the four point probe technique, It was found th ... Show More

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(6)

Publication Date

Fri Feb 01 2019

Journal Name

Journal Of Physics: Conference Series

Manufacturing and studying the effect of partial substitution on the properties of the compound Bi2-x AgxSr1.9Ba0.1Ca2Cu3O10+δ superconductors.

Noor S.

Abdulsalam S.

Bilal A.

Shatha

Kareem A.

Saja Amer

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(3)

Publication Date

Tue May 01 2018

Journal Name

Journal Of Physics: Conference Series

The partial substitution of copper with nickel oxide on the Structural and electrical properties of HgBa2 Ca2 Cu3xNix O8+δ superconducting compound

Laheeb A

L A

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(31)

(15)

Publication Date

Sun Nov 01 2020

Journal Name

Iop Conference Series: Materials Science And Engineering

Effect of Germanium Content on the Optical Constants of GexS1-x Thin Films

Ge xS1-xchalcogene thin films

optical constants

energy gap.

Bushra A.

Mohammed Abidalhur

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AbstractIn this study the alloys Ge xS1-x with different Ge content (x=0, 0.1,0.2 and 0.3) wt.% have been successfully prepared by evacuated quartz tube under vacuum pressure (10−2Torr), whereas Ge xS1-x thin films were prepared by thermal evaporation technique under vacuum (10−5Torr) with (x=0,0.1,0.2 and 0.3). The optical properties measurements shows that the optical energy gap decrease from (3.4 to 3 eV) with the increase of x content, the optical constants declare significant variation with x content variation.

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Publication Date

Thu Jan 01 2026

Journal Name

Chalcogenide Letters

Influence of Germanium Substitution on the DC Electrical Properties and Energy Density of States in Pb50−xGexTe50 Ternary Chalcogenide Alloys

Muayed Khaleel

Shaymaa Hashim

Nidhal Saleh

Kareem Ali

Mudatheer M.

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Publication Date

Thu Jan 01 2026

Journal Name

Chalcogenide Letters

Structural and Optical Properties of Cu2ZnSn(S1−xSex)4 Nanostructures Thin Film for Photovoltaic Applications

Cu2 ZnSn(S1−x Se x)4 thin film

energy gap

dielectric constant

extinction coefficient

refractive index

Bushra A.

Ameer J.

Ahmad A.

Yasser A.

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Copper zinc tin sulfide selenide, Cu2 ZnSn(S1−x Se x)4 , absorbers are promising earth-abundant and environmentally benign materials for low-cost photovoltaic applications. This study investigates the structural and optical properties of Cu 2 ZnSn(S1−x Se x)4 nanostructured thin films prepared by pulsed laser deposition using melt-quenched targets with selenium compositions x = 0.0–1.0. X-ray diffraction revealed that films with low selenium content remained amorphous, whereas higher selenium incorporation promoted the formation of polycrystalline kesterite–stannite phases with preferred orientations along (112), (200), (220), and (312). The crystallite size increased from 12.3 to 17.9 nm as selenium reached x = 1.0, indicating enha

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