Bulk AlxSb1-x samples were prepared with different x ratios (0.1, 0.3, 0.5, 0.7 and 0.9) by quenching technique. This was done throughout mixing the aluminum and antimony elements according to the proper atomic weight and put them in an evacuated quartz ampoule which then sealed and heated at 1273 K for five hours and left to cool in air. Thin films of AlxSb1-xwere prepared by using thermal evaporation under vacuum of 10-5 mbar on glass substrates at room temperature with deposition rate (10-15nm/min) at thickness of ∼ 500nm. The structures of AlxSb1-x bulk and thin films have been studied by X–ray diffraction technique. The results showed that all alloys have polycrystalline structures and the peaks at composition ratio x = 0.3, 0.5 and 0.7 were identical with the AlSb standard peaks while at x = 0.1 and 0.9 the peaks are identical with Sb and Al respectively. The x-ray pattern of the prepared thin films are polycrystalline and the peaks identical with cubic structure also the peaks intensity decrease with the increase of aluminum ratio in the prepared thin films. AFM measurements showed the non-regular variation (increasing and decreasing) of both the average grain size and average surface roughness with the increasing of composition ratio. AlxSb1-x thin films showed high charge carrier concentration nHespecially at x = 0.1 and 0.3 on the other side charge carrier concentration showed reduction with the increase of aluminum content whereas nHreach minimum value at x = 0.7 and then increases with further increase of aluminum content. The electrical conductivity of AlxSb1-x declare similar behavior where it reach minimum value at x = 0.5. From another side AlxSb1-x thin films show high conductivity resemble that of metallic material especially also at x = 0.1 and 0.3.
Chalcopyrite thin films were one-step potentiostatically deposited onto stainless steel plates from aqueous solution containing CuSO4, In2(SO4)3 and Na2S2O3.The ratio of (In3+:Cu2+) which involved in the solution and The effect of cathodic potentials on the structural had been studied. X-ray diffraction (XRD) patterns for deposited films showed that the suitable ratio of (In3+:Cu2+) =6:1, and suitable voltage is -0.90 V versus (Ag/AgCl) reference electrode
The effects of incorporating lithium carbonate (Li2CO3) into a polyvinyl alcohol/polyvinyl pyrrolidone/polyethylene glycol (PVA/PVP/PEG) blend polymer electrolyte were investigated. Electrolytes were prepared via solution casting method, with Li2CO3 added at 10, 20, and 30 wt.% to the PVA/PVP/PEG blend (50/30/20 ratio). Fourier transform infrared spectroscopy analysis revealed interactions between the added salt and the polymer blend. The addition of both PEG and Li2CO3 resulted in increased ionic conductivity, reaching a maximum of 4.51 x 10- 5 S/cm at 30 degrees C with 20 wt.% Li2CO3. Ionic conductivity also exhibited a positive temperature dependence. Optical analysis showed a decrease in the optical energy gap with the addition of PEG a
... Show MoreThis study is conducted to investigate the validity of using different levels of Rustumiya sewage water for irrigation and their effects on corn growth and some of the chemical properties of the soil such as electrical conductivity and soil pH in extract soil paste , the micro nutrient content in soil and plant which are ( Fe , Mn , Zn , Cu , Cd , Pb ). Three levels of sewage water ( 0 , 50 , 100 )% in two stages were used ,the three levels of wastewater ( without soil fertilization ) were used in the first stage , Where 80 Kg N /D+50Kg P2O5 /D was added to the soil as fertilizer in the control (0%) treatment and 40 Kg N/D+25Kg P2O5/D were added to 50 and 100% levels in the second stage .Corn seeds were planted in 12kg plastic pots in Com
... Show MorePMMA films of different thickness (0.006, 0.0105, 0.0206, 0.0385 and 0.056cm) were synthesized by casting process. The temperature and frequency dependence of dielectric constant and AC electrical conductivity measurements at various frequencies (10kHz-10MHz) and temperatures (293-373K) were carried out. Few anomalies in dielectric studies were observed near 313 and 373 K respectively. These points were related to glass transitions temperature. The variation of activation energy and conduction behavior was studied .From the AC conduction studies, it is confirmed that the mechanism responsible for the conduction process is hopping of carriers. The variations of the dielectric constant and loss as function of frequency at different tempera
... Show MoreThe experiment was conducted under shading (with the aid of Saran) condition on a nursery managed by the Baghdad Mayoralty during the season of 2014-2015 to study the effect of composed sheep manure extract on the growth and leaf nutrients content of tomato seedlings var. Wijdan. The experiment was composed of 6 treatments included the extract of sheep manure by hot (425C)and lmbient(205C) temperature water .The extract was diluted to the half by water and foliar applied to seedlings (multible application) or to the soil . Treatments also included the application of NPK chemical fertilizers as recommended and a control treatment through applying distilled water as foliar .The experiment was designed according to the randomized compl
... Show MoreIn this study used three methods such as Williamson-hall, size-strain Plot, and Halder-Wagner to analysis x-ray diffraction lines to determine the crystallite size and the lattice strain of the nickel oxide nanoparticles and then compare the results of these methods with two other methods. The results were calculated for each of these methods to the crystallite size are (0.42554) nm, (1.04462) nm, and (3.60880) nm, and lattice strain are (0.56603), (1.11978), and (0.64606) respectively were compared with the result of Scherrer method (0.29598) nm,(0.34245),and the Modified Scherrer (0.97497). The difference in calculated results Observed for each of these methods in this study.
The Ge0.4Te0.6 alloy has been prepared. Thin films of Ge0.4Te0.6 has been prepared via a thermal evaporation method with 4000A thickness, and rate of deposition (4.2) A/sec at pressure 2x10-6 Torr. The A.C electrical conductivity of a-Ge0.4Te0.6 thin films has been studied as a function of frequency for annealing temperature within the range (423-623) K, the deduced exponent s values, was found to decrease with increasing of annealing temperature through the frequency of the range (102-106) Hz. It was found that, the correlated barrier hopping (CBH) is the dominant conduction mechanism. Values of dielectric constant ε1 and dielectric loss ε2 were found to decrease with frequency and increase with temperature. The activation energies have
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