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Ammonia Gas Sensing Using Porous silicon
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Abstract<p>Psi prepared by Electrochemical etching technique at invariable etching current density of 10 mA/cm<sup>2</sup> and at different times (7 and 17) min. The porous Si structure was studied using XRD, (FE-SEM) and EDS. The process of sensing NH<sub>3</sub> gas is carried out at different operating temperatures (R.t,80,130 and 200)°C and the gas concentration is constant. It is measured by changing the resistance of the sensor as a function of exposure time to the gas. The result showed the XRD patterns of the PS at (7 and 17) min etching time. the peak samples at (111) around 2θ = 28.5°. It is observed that the peak intensity declines with rising the etching time, and some structural parameters for porous silicon are calculated. From FE-SEM, the images show the sample prepared in (7 and 17) min with the depth of (6.18 12.82) μm, with a size of about 50 nm. Porous silicon that was produced in a time of 17 min has a higher sensitivity to NH<sub>3</sub> gas than that of the sample that was produced in a time of 7 min. It was found that when the operating temperature changes from (R.T -200C°), the sensitivity of the samples changes with the stability of the etching time. The PSi sample (17 min) has a high sensitivity for NH<sub>3</sub> gas at room temp.</p>
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Publication Date
Tue Sep 23 2025
Journal Name
Arabian Journal For Science And Engineering
Shear Thickening Behaviour of Cross-Linked Polyacrylamide Gels Induced by Gas Flow in Porous Media
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Excessive water production is a persistent challenge in oil and gas wells, with polymer and gel solutions commonly employed for water control. This study investigates the rheological behaviour of cross-linked polyacrylamide gels and their impact on water shutoff treatment in gas wells. Rheological measurements, coreflooding experiments using Berea sandstone samples, and micromodel flow visualizations were conducted to evaluate gel performance. Results showed that during water injection, the water residual resistance factor ( Frrw ) decreases with increasing flow rates, mainly due to gel shear thinning behaviour and reduced residual gas saturation. Higher polymer concentrations in the gel enhance water permeability reduction. In contrast, un

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Publication Date
Mon Jun 01 2015
Journal Name
The European Physical Journal Applied Physics
A carbon nanotubes photoconductive detector for middle and far infrared regions based on porous silicon and a polyamide nylon polymer
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Publication Date
Tue Apr 02 2024
Journal Name
Iraqi Journal Of Applied Physics
Effect of Substrate Temperature on Characteristics and Gas Sensing Properties of Nb2O5/Si Thin Films
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Thin films of Nb2O5 have been successfully deposited using the DC reactive magnetron sputtering technique to manufacture NH3 gas sensors. These films have been annealed at a high temperature of 800°C for one hour. The assessment of the Nb2O5 thin films structural, morphological, and electrical characteristics was carried out using several methods such as X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), Hall effect measurements, and sensitivity assessments. The XRD analysis confirms the polycrystalline composition of the Nb2O5 thin films with a hexagonal crystal structure. Furthermore, the sensitivity, response time, and recovery time of the gas sensor were evaluated for the Nb2O5 thin film

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Publication Date
Wed May 01 2019
Journal Name
Iraqi Journal Of Science
Investigation of nanostructured and gas sensing of tin dioxide films prepared by oxidation of Sn
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Publication Date
Mon Jan 01 2024
Journal Name
2nd International Conference For Engineering Sciences And Information Technology (esit 2022): Esit2022 Conference Proceedings
ZnO nanostructures as low concentration NO2 gas sensor and impact the temperature on sensing properties
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Zinc oxide (ZnO) nanostructures were synthesized through the hydrothermal method at various conditions growth times (6,7 and 8 hrs.) and a growth temperature (70, 90, and 100 ºC). The prepared ZnO nanostructure samples were described using scanning electron microscopy (SEM) and X-ray diffractometer to distinguish their surface morphologies and crystal structures. The ZnO samples were confirmed to have the same crystal type, with different densities and dimensions (diameter and length). The obtained ZnO nanostructures were used to manufacture gas sensors for NO2 gas detection. Sensing characteristics for the fabricated sensor to NO2 gas were examined at different operating temperatures (180, 200, 220, and 240) ºC with a low gas concentrati

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Publication Date
Thu Feb 01 2024
Journal Name
Journal Of Materials Science
Investigations on TiO2–NiO@In2O3 nanocomposite thin films (NCTFs) for gas sensing: synthesis, physical characterization, and detection of NO2 and H2S gas sensors
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Publication Date
Sun Feb 01 2026
Journal Name
Russian Microelectronics
Structure, Optical and a Novel Approach to Low-Temperature Gas Sensing Using (SnO2)1–x(TiO2:Bi2O3)x Thin Films for NO2 Detection
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Tin oxide: titanium oxide: bismuth oxide (SnO2 )1–x(TiO 2 :Bi 2O3 ) x composites with different loading ratios (0, 0.1, 0.15, 0.2, 0.25 and 0.3) have numerous new application in microelectronics, sensors, and capacitors. This work concerned with the synthesis of (SnO 2 )1–x(TiO 2 :Bi 2O3 ) xcomposites as well as, thin films which were deposited on glass substrates as well as, silicon wafers by using pulsed laser deposition. The diffraction pattern confirms the anatase teteragonal phase of undoped tin oxide. It was observed some peaks related with titanium and bismuth oxides appeared at high loading ratios. Upon the transmission-spectra analysis, the undoped samples declared transmittance 60–67% in a visible spectrum, and the energy ga

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Publication Date
Sun Jul 02 2023
Journal Name
Iraqi Jounal Of Applied Physics
Effect of In2O3 and Eu2O3 Dopants on Morphology and Gas Sensing Properties of CeO2 Thin Films
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Pulsed-laser deposition (PLD) technique was used to prepare thin films from cerium oxide (CeO2) doped with erbium and indium oxides. In order to characterize the morphology and sensing features, these films were deposited on glass and/or single silicon substrates, respectively, with erbium and indium oxides. The morphological investigation conducted using atomic force microscope has shown an increase in the non-regularity of particle diameter with increasing doping ratios of both oxides. The maximum particle diameter of 61.45nm was obtained for 9% Eu2O3-doped CeO2. The surface roughness value of Eu2O3-doped ceria was higher than those of In2O3-doped ceria. The gas sensing measurements were done at

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Publication Date
Tue Sep 01 2009
Journal Name
2009 5th International Conference On Wireless Communications, Networking And Mobile Computing
Cooperation Spectrum Sensing Using Optimal Joint Detecting
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In cognitive radio networks, there are two important probabilities; the first probability is important to primary users called probability of detection as it indicates their protection level from secondary users, and the second probability is important to the secondary users called probability of false alarm which is used for determining their using of unoccupied channel. Cooperation sensing can improve the probabilities of detection and false alarm. A new approach of determine optimal value for these probabilities, is supposed and considered to face multi secondary users through discovering an optimal threshold value for each unique detection curve then jointly find the optimal thresholds. To get the aggregated throughput over transmission

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Publication Date
Mon Jul 01 2019
Journal Name
Journal Of Physics: Conference Series
Enhanced sensing properties of WO<sub>3</sub> and its binary systems for thin films gas sensors
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Abstract<p>Thin films of pure WO<sub>3</sub> and the binary systems of TiO<sub>2</sub>:WO<sub>3</sub>,MoO<sub>3</sub>:WO<sub>3</sub>,Cr<sub>2</sub>O<sub>3</sub>:WO<sub>3</sub>, and SnO<sub>2</sub>:WO<sub>3</sub> were prepared by pulsed laser deposition method. The single and binary compounds were sintered at 1273K for five hours. The deposition were done under vacuum of 2x10<sup>-2</sup> Torr at various substrates like glass and single crystal silicon wafer with negative conductance at ambient temperature thickness of ≍150 nm. The structures and morphology of pure WO<sub>3</sub></p> ... Show More
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