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Effect of Antimony Oxide Additive on Characteristics of (SnO2)1-x(Sb2O3)x Composite Thin Films Synthesized by Pulsed-Laser Deposition
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Tin:antimony oxides composites have given great attention due to their unique properties and many application in various fields like optoelectronic devices, gas sensors. The synthesis and characterization of (SnO2)1-x(Sb2O3)x was conducted in order to comprehend the structure and discuss the optical and dielectric properties of this composites. The x-ray showed that the prepared pure tin oxide thin film was had a polycrystalline structure and that the peaks were identical with the tetragonal phase while the peaks were identical with antimony oxide for x=0.1 to x=0.5. The average crystal size along the preferred level of growth of tin oxide as well as of antimony oxide showed non regular change by increasing of antimony oxide content. Optical measurements showed that the prepared films(SnO2)1-x(Sb2O3)x had a direct Eg opt energy gap of 3.75 eV, which showed a non- regular increasing to 3.95 eV with the increase of antimony oxide content from x = 0.0 to x = 0.5. Dielectric and electrical impedance properties of (SnO2)1-x(Sb2O3)x composites were studied over the frequency range from 1kHz to 200kHz. The results showed that the dielectric properties of (SnO2)1-x(Sb2O3)x composites and showed significant dependence upon frequency. The frequency dependence type of AC conductivity obeys the Jonscher’s power law.

Publication Date
Mon Jul 01 2019
Journal Name
Journal Of Physics: Conference Series
Electrical Properties of AgSb(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub> Thin Films
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Alloys from AgSb(SxSe1-x)2 with different compositions were prepared using quenching from the melt . This was done by put the appropriate amount of Ag, Sb,S and Se in an evaluated quartz ampoule , sealed and left at oven in temperature 1273 for 5 hours. Thin films with different composition were deposited by pulsed deposition technique PLD onto glass substrates at ambient temperature . This paper concerned on the investigate effect of composition on structural morphology, and electrical properties. The structure and morphology of the prepoared thin films were checked using X–ray diffraction and atomic force microscope. The D.C conductivity of the AgSb(SxSe1-x)2thin films with various x content was measured

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Publication Date
Wed Dec 01 2021
Journal Name
Iraqi Journal Of Physics
Effect of Zinc (Zn) -Doped on the Structural, Optical and Electrical Properties of (Cdo)1-Xznx Films Prepared by Pulsed Laser Deposition Technique
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Pure cadmium oxide films (CdO) and doped with zinc were prepared at different atomic ratios using a pulsed laser deposition technique using an ND-YAG laser from the targets of the pressed powder capsules. X-ray diffraction measurements showed a cubic-shaped of CdO structure. Another phase appeared, especially in high percentages of zinc, corresponding to the hexagonal structure of zinc. The degree of crystallinity, as well as the crystal size, increased with the increase of the zinc ratio for the used targets. The atomic force microscopy measurements showed that increasing the dopant percentage leads to an increase in the size of the nanoparticles, the particle size distribution was irregular and wide, in addition, to increase the surfac

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Publication Date
Mon Dec 07 2020
Journal Name
Journal Of Advanced Research In Fluid Mechanics And Thermal Sciences
Hybrid Bilayer Heterojunction Al/ZnPc/ZnO /ITO Thin Films Solar Cell Prepared by Pulsed Laser Deposition
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Hybrid bilayer heterojunction Zinc Phthalocyanine (ZnPc) thin-film P-type is considered as a donor active layer as well as the Zinc Oxide (ZnO) thin film n-type is considered as an acceptor with (Electron Transport Layer). In this study, using the technique of Q-switching Nd-YAG Pulsed Laser Deposition (PLD) under vacuum condition 10-3 torr on two ITO (Indium Tin Oxide) and (AL) electrodes and aluminum, is used to construct the hydride bilayer photovoltaic solar cell heterojunction (PVSC). The electrical properties of hybrid heterojunction Al/ZnPc/ZnO/ITO thin film are studied. The results show that the voltage of open circuit (V_oc=0.567V), a short circuit (I_sc=36 ?A), and the fill factor (FF) of 0.443. In addition, the conversion

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Publication Date
Thu Dec 14 2023
Journal Name
Optical And Quantum Electronics
Enhancing response characteristics of palladium-doped vanadium pentoxide on a porous silicon substrate as gas sensor synthesized by pulsed laser deposition
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Publication Date
Mon Feb 18 2019
Journal Name
Iraqi Journal Of Physics
Effect of annealing temperature and laser pulse energy on the optical properties of CuO films prepared by pulsed laser deposition
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In this work; copper oxide films (CuO) were fabricated by PLD. The films were analyzed by UV-VIS absorption spectra and their thickness by using profilometer. Pulsed Nd:YAG laser was used for prepared CuO thin films under O2 gas environment with varying both pulse energy and annealing temperature. The optical properties of   as-grown film such as optical transmittance spectrum, refractive index and energy gap has been measured experimentally and the effects of laser pulse energy  and annealing temperature on it were studied. An inverse relationship between energy gap and both annealing temperature and pulse energy was observed.

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Publication Date
Tue Aug 05 2025
Journal Name
Optik
Optimization of plasmonic Al/TiO₂ thin film characteristics via scanning pulsed fiber laser deposition
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The deposition method of perovskite solar cell layers significantly impacts device functionality and the achievement of industrial goals. Aluminum (Al) nanoparticles with rutile titanium oxide (TiO2) nanoparticle thin films are fabricated on Fluorine Tin Oxide (FTO) glass substrates by nanosecond pulsed fiber laser deposition (PLD) to be used as a plasmonic electron transport layer (ETL) in perovskite solar cell (PSC). The effect of various pulsed fiber laser parameters on the structural, optical, and surface morphology on Al/TiO2 films is extensively examined utilizing a variety of measurement techniques; X-ray diffraction (XRD), Ultraviolet–visible (UV–Vis) spectroscopy, Field emission scanning electron microscopy (FE-SEM) and Atomic

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Publication Date
Mon Mar 30 2020
Journal Name
Neuroquantology
Structural and Optical Analysis of Rhodamine 6G Thin Films Prepared by Q-switched Nd: YAG Pulsed Laser Deposition
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Publication Date
Fri Sep 09 2022
Journal Name
Journal Of Ovonic Research
The effects of CuO doping on structural, electrical and optical properties of CdO thin films deposited by pulsed laser deposition technique
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Thin films of (CdO)x (CuO)1-x (where x = 0.0, 0.2, 0.3, 0.4 and 0.5) were prepared by the pulsed laser deposition. The CuO addition caused an increase in diffraction peaks intensity at (111) and a decrease in diffraction peaks intensity at (200). As CuO content increases, the band gap increases to a maximum of 3.51 eV, maximum resistivity of 8.251x 104 Ω.cm with mobility of 199.5 cm2 / V.s, when x= 0.5. The results show that the conductivity is ntype when x value was changed in the range (0 to 0.4) but further addition of CuO converted the samples to p-type.

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Publication Date
Sun Sep 01 2024
Journal Name
Iraqi Journal Of Physics
Physical Properties Studies of Magnesium Phthalocyanine (MgPc) Thin Films of Different Annealing Temperatures Prepared by Pulsed Laser Deposition Technique
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Magnesium Phthalocyanine (MgPc) was deposited on a glass substrate by pulsed laser deposition (PLD) using Q-Switching Nd:YAG laser with wavelength 1064 nm, repetition rate 6 Hz, at room temperature (300K) and different annealing temperatures (373, 473, and 573)K under vacuum condition of 10-3 torr. All films were annealed for one hour to attain crystallinity. X-ray diffraction (XRD) of MgPc powder indicated that MgPc crystallizes in polycrystalline with a monoclinic structure. While comparing the MgPc films, it was observed that the intensity of the characteristic peak increases with temperature, and the crystallization exhibited a monoclinic structure typical of the β-form. The Miller indices, hkl, values for each diffraction peak

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Publication Date
Sat Jan 01 2011
Journal Name
Iraqi Journal Of Physics
Study of annealing effect on some Optical Properties of CuIn(SexTe1-x)2 Thin Films
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The optical properties for the components CuIn(SexTe1-x)2 thin films with both values of selenium content (x) [0.4 and 0.6] are studied. The films have been prepared by the vacuum thermal evaporation method with thickness of (250±5nm) on glass substrates. From the transmittance and absorbance spectra within the range of wavelength (400-900)nm, we determined the forbidden optical energy gap (Egopt) and the constant (B). From the studyingthe relation between absorption coefficient (α) photon energy, we determined the tails width inside the energy gap.
The results showed that the optical transition is direct; we also found that the optical energy gap increases with annealing temperature and selenium content (x). However, the width of l

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