In this paper, thin films of undoped and nickel oxide (NiO) doped titanium dioxide (TiO₂) were prepared using the chemical spray pyrolysis deposition (CSP) technique, with different concentrations of nickel oxide (NiO) in the range (3-9) wt%. The morphological, structural, electrical, and sensing properties of a gas of the prepared thin films were examined. XRD measurements showed that TiO₂ films have a polycrystalline structure. AFM analysis showed that these films have a regular structure both before and after doping . The roughness of these films  decreased after adding  impurities but then the opposite of that took  place. The electrical and gas sens

Thin films whose compositions can be expressed by (GeS₂)_100-xGa_x (x=0, 6,12,18) formula were obtained by thermal evaporation technique  of bulk material at a base pressure of ~10^-5 torr. Optical transmission spectra of the films were taken in the range of 300-1100 nm then the optical band gap, tail width of localized states,  refractive index, extinction coefficient were calculated. The optical constants were found to increase at low concentration of Ga (0 to12%) while they decreases with further addition of Ga. The optical band gap was found to change in opposite manner to that of optical constants. The variation in the optical parameters are explained in terms of average bond energy

The photoconductivity and its dependence on light intensity have been investigated in a-Ge20Se80 thin films as a function of temperature between (293–323)K. The result showed that the photoconductivity and photosensitivity increase with increase of annealing temperature. This behavior is interpreted in terms of the dispersive diffusion –controlled recombination of localized electrons and holes.

In this paper, a design of the broadband thin metamaterial absorber (MMA) is presented. Compared with the previously reported metamaterial absorbers, the proposed structure provides a wide bandwidth with a compatible overall size. The designed absorber consists of a combination of octagon disk and split octagon resonator to provide a wide bandwidth over the Ku and K bands' frequency range. Cheap FR-4 material is chosen to be a substate of the proposed absorber with 1.6 thicknesses and 6.5×6.5 overall unit cell size. CST Studio Suite was used for the simulation of the proposed absorber. The proposed absorber provides a wide absorption bandwidth of 14.4 GHz over a frequency range of 12.8-27.5 GHz with more than %90 absorp

Nanocrystal-ZnS-loaded graphene was synthesized by a facile co-precipitation route. The Graphene was affected on the characterization of ZnS which has been investigated. XRD results reveal that ZnS has a cubic system while the hexagonal structure has been observed by loading graphene during preparation ZnS. D.c-conductivity proves that ZnS and ZnS/Gr have semiconductor behavior. The sensing properties of ZnS/Gr against NO₂ gas were investigated as a function of operating temperature and time under optimal condition. The sensitivity, response time and recovery time were calculated with different operating temperatures (100, 150, 200)^oC.

In the current study, CuAl0.7In0.3Te2 thin films with 400 nm thickness were deposited on glass substrates using thermal evaporation technique. The films were annealed at various annealing temperatures of (473,573,673 and 773) K. Furthermore, the films were characterized by X-ray Diffraction spectroscopy (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and Ultra violet-visible (UV–vis). XRD patterns confirm that the films exhibit chalcopyrite structure and the predominant diffraction peak is oriented at (112). The grain size and surface roughness of the annealed films have been reported. Optical properties for the synthesized films including, absorbance, transmittance, dielectric constant, and refr