The influence of different thickness (500, 1000, 1500, and 2000) nm on the electrical conductivity and Hall effect measurements have been investigated on the films of copper indium gallium selenide CuIn1-xGaxSe2 (CIGS) for x= 0.6.The films were produced using thermal evaporation technique on glass substrates at R.T from (CIGS) alloy. The electrical conductivity (σ), the activation energies (Ea1, Ea2), Hall mobility and the carrier concentration are investigated and calculated as function of thickness. All films contain two types of transport mechanisms of free carriers, and increases films thickness was fond to increase the electrical cAnductivity whereas the activation energy (Ea) would vary with films thickness. Hall Effect analysis results of CIGS films show all films were (p-type) and both Hall mobility and the carrier concentration increase with the increasing films thickness.
The problem of non-Darcian-Bènard double diffusive magneto-Marangoni convection is considered in a horizontal infinite two layer system. The system consists of a two-component fluid layer placed above a porous layer, saturated with the same fluid with a constant heat sources/sink in both the layers, in the presence of a vertical magnetic field. The lower porous layer is bounded by rigid boundary, while the upper boundary of the fluid region is free with the presence of Marangoni effects. The system of ordinary differential equations obtained after normal mode analysis is solved in a closed form for the eigenvalue and the Thermal Marangoni Number (TMN) for two cases of Thermal Boundary Combinations (TBC); th
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