Optical losses represent one of the primary obstacles to increasing the efficiency of silicon solar cells. The recommended solution to minimize optical losses is the use of plasmonic metal nanoparticles; however, they act as recombination centers within the solar cell construction, leading to a decrease in performance. The goal of this article is to introduce cobalt/graphene nanoparticles into the solar cell to minimize the optical losses. An ultra-thin film silicon PIN solar cell of dimensions (400 ×400 ×900) nm3 with ring metal contact shape was designed and numerically investigated using COMSOL Multiphysics software version 6.2 by the finite element method (FEM). Core/shell cobalt-graphene (Co/Gr) nanoparticles are periodically introduced into the cell between two layers (electron transport and active) in a ratio of 50:50 with an inter-spacing of a similar diameter. The Co/Gr parameters, number of nanoparticles (2, 4, 6), radius (10, 20, 30) nm, and shell thickness (1, 2, 4) nm were extensively studied. In addition, the arrangement of the core/shell nanoparticle material was considered. The results manifest the best performance of the proposed cell at 4 nanoparticles of 30 nm radius with 2 nm shell thickness for Co/Gr nanoparticles to get a maximum photocurrent of 26.28 mA/cm2. It is concluded that the optical losses of the Co/Gr core/shell nanoparticles embedded in an ultra-thin film silicon solar cell are significantly reduced owing to the increment in the absorption and hence the photocurrent. This enhancement opens a new avenue for further improvements.
The main purpose of this work is the construction of an optical parametric amplifier (OPA) to generate a 629 nm pulsed laser. KTP nonlinear crystals were used for both parametric oscillation and amplification. A singly resonant parametric oscillator (OPO) is constructed to generate a signal of 1.54 μm and idler of 3.4 μm when the OPO system is pumped by 1.064 μm Q – switched Nd: YAG laser. The signal was then mixed with the pumping beam in OPA system to form the wanted wavelength. The obtained optical conversion efficiency was 60%.
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The electrical properties of the AlNiCo thin films with thickness (1000oA) deposited on glass substrates using Ion – Beam sputtering (IBS) technique under vacuum <10-6 torr have been studied . Also it studied the effect of annealing temperature from this films , It is found that the effective energy decrease with increase of temperature and the conductivity decrease with increase temperature 323oK but after this degree the conductivity increasing .
CdO films were deposited on substrates from glass, Silicon and Porous silicon by thermal chemical spray pyrolysis technique with different thicknesses (130 and 438.46) nm. Measurements of X-ray diffraction of CdO thin film proved that the structure of the Polycrystalline is cubic lattice, and its crystallite size is located within nano scale range where the perfect orientation is (200). The results show that the surface’s roughness and the root mean square increased with increasing the thickness of prepared films. The UV-Visible measurements show that the CdO films with different thicknesses possess an allowed direct transition with band gap (4) eV. AFM measurement revealed that the silicon porosity located in nano range. Cadmium oxide f
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in this paper, the current work was devoted to the manufacture of TiO2 nanoparticles doped with manganese, synthesis by the sol-gel technique using a dip-conting device, for their hydrophilic properties and photocatalytic activity, and the products were characterized by X-ray diffraction, scanning electron microscopy, and Uv-Visible absorption, and the results XRD showed an phase Anatase , and the results of the SEM Explained the shape of the morphology of the samples after the doping process compared with pure TiO2, and the results of a shift in light absorption from ultraviolet rays to visible light were evident. The results showed that the thin films have a high wettability under visible rays
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Structural, optical, and electrical properties of thin films of CdS : Zn prepared by the solution – growth technique are reported as a function of zinc concentration. CdS are window layers influencing the photovoltaic response of CIS solar cells. The zinc doping concentration was varied from 0.05 to 0.5 wt %, zinc doping apparently increase the band gap and lowers the resistivity. All beneficial optical properties of chemically deposited CdS thin films for application as window material in heterojunction optoelectronic devices are retained. Heat treatment in air at 400 °C for 1h modify crystalline structure, optical, and electrical properties of solution growth deposited CdS : Zn films.
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Copper Zinc Sulphide (Cu0.5Zn0.5S) alloy and thin films were fabricated in a vacuum. Nano crystallized (CZS) film with thick 450±20 nm was deposit at substrates glasses using thermal evaporation technique below ~ 2 × 10− 5 mbar vacuum to investigated the films structural, morphological and optical properties depended on annealing temperatures ( as-deposited, 423, 523 and 623) K for one hour. The influences annealed temperature on structurally besides morphologically characteristics on these films were investigated using XRD and AFM respectively. XRD confirms the formation a mixed hexagonal phase of CuS-ZnS in (102) direction with polycrystalline in nature having very fine crystallites size varying from (5.5-13.09) nm. AFM analys
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