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The Effect of Atomic Percentage Selenium Content on the Permittivity and Polarizability of Ge1-xSex thin films
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Generally the a.c. conductivity shows a power law in frequency s  ()  where the exponent s ≤ 1. As the frequency goes to zero the conductivity become frequency independent. The a.c. conductivity was studied for the Ge1-xSex thin films to see how the selenium contents affect the permittivity and the permeability for the Ge1-x Sex. The thin films prepared by thermal evaporation at room temperature and under vacuum (~2 x10-5toor) using Edward coating unit model 306A. From the relation between ln conductivity and ln w, the effect of selenium contents in Ge1-x Sex thin films on the exponent value, the relaxation time and the maximum barrier height. An algebric fitting method for circles and circular arcs was used to find the permittivity and the permeability from cole-cole diagram, and to see how the selenium content affects these parameter values of Ge1-x Sex thin films. It was clear that there were direct proportions between the selenium content in the Ge1-x Sex structure and each of the following factors: The exponent S, the barrier height, and the permittivity. It was also possible to note the presence of inverse proportion between the selenium content in the Ge1-x Sex structure and each of the polarizability and the charge carrier relaxation time.

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Publication Date
Mon Jul 20 2020
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Thickness Effect of CuAlTe2 Thin Films on Morphological, Structural and Visual Properties
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     CuAlTe2 thin films were evaporation on glass substrates using the technique of thermal evaporation at different range of thickness (200,300,400and500) ±2nm. The structures of these films were investigated by X-ray diffraction method; showing that films possess a good crystalline in tetragonal structure. AFM showed that the grain size increased from (70.55-99.40) nm and the roughness increased from (2.08-3.65) nm by increasing the thickness from (200-500) nm. The optical properties measurements, such as absorbance, transmtance, reflectance, and optical constant as a function of wavelength showed that the direct energy gap decreased from (2.4-2.34) eV by the gain of the thickness.

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Publication Date
Sun Jun 01 2014
Journal Name
Baghdad Science Journal
The Effect of annealing temperature on the optical properties of (Cu2S)100-x( SnS2 )x thin films
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Thin films of (Cu2S)100-x( SnS2 )x at X=[ 30,40, &50)]% with thickness (0.9±0.03)µm , had been prepared by chemical spray pyrolysis method on glass substrates at 573 K. These films were then annealed under low pressure of(10-2) mbar ,373)423&473)K for one hour . This research includes , studying the the optical properties of (Cu2S)100-x-(SnS2)x at X=[ 30,40, &50)]% .Moreover studying the effect of annealing on their optical properties , in order to fabricate films with high stability and transmittance that can be used in solar cells. The transmittance and absorbance spectra had been recorded in the wavelength range (310 - 1100) nm in order to study the optical properties . It was found that these films had direct optical band

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Publication Date
Sun Apr 23 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
The Study Of Thickness And Annealing Temperature Effect On Structural and Optical Properties For ZnO Thin Films
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  In the present work, We study the structural and optical properties of (ZnO), which are prepared by thermal evaporation technique, where deposit (Zn) on glass substrates at different thicknesses (150,250,350)nm, deposited on glass substrate at R.T. with rate (5 nm sec-1). And then we make oxidation for (Zn) films at temperature (500) and using the air for one hour, and last annealing samples at temperature (400,500) for one hour. The investigation of (XRD) indicates that the (ZnO) films are polycrystalline type of hexagonal with a preferred orientation along (002) to all samples and analysis reveals that the intensity of this orientation increases with the increase of the thickness and annealing temperature.   &nbsp

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Publication Date
Wed Jan 01 2014
Journal Name
International Journal Of Innovative Research In Science, Engineering And Technology
EFFECT AMBIENT OXIDATION ON STRUCTURAL AND OPTICAL PROPERTIES OF COPPER OXIDE THIN FILMS
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The structural, optical properties of copper oxide thin films ( CuO) thin films which have been prepared by thermal oxidation with exist air once and oxygen another have been studied. Structural analysis results of Cu thin films demonstrate that the single phase of Cu with high a crystalline structure with a preferred orientation (111). X-ray diffraction results confirm the formation of pure (CuO) phase in both methods of preparation. The optical constant are investigated and calculated such as absorption coefficient, refractive index, extinction coefficient and the dielectric constants for the wavelengths in the range (300-1100) nm.

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Publication Date
Wed Sep 01 2021
Journal Name
Iraqi Journal Of Physics
The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films
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Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and po

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Publication Date
Fri Jan 01 2016
Journal Name
World Scientific News
Effect of annealing temperature on the structural and optical properties of CdSe: 1% Ag thin films
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Publication Date
Sat Dec 30 2023
Journal Name
Iraqi Journal Of Science
Effect of Thickness and Thermal Annealing on Optical Properties of Sb Thin films
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Antimony (Sb) films are fabricated by depositing (Sb) on glass substrates at room
temperature by the method of vacuum evaporation with thickness (0.25 and 0.51m),
with rate of deposition equal to (2.77Å/sec), the two samples are annealed in a
vacuum for one hour at 473K. The optical constants which are represented by the
refractive index (n), extinction coefficient (k) were determined from transmittance
spectram in the near Infrared(2500-3500 )nm regions. The tests have been shown
that the optical energy gap increases with increasing of annealing temperature for
the two samples.

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Publication Date
Sat Jan 05 2019
Journal Name
Iraqi Journal Of Physics
The effect of heat treatment on the optical properties of organic semiconductor (NiPc/C60) thin films
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Thin films of the blended solution of (NiPc/C60) on glass substrates were prepared by spin-coated method for three different ratios (100/1, 100/10 and 100/100). The effects of annealing temperature and C60 concentration on the optical properties of the samples were studied using the UV-Vis absorption spectroscopy and FTIR spectra. The optical absorption spectrum consists of two main bands, Q and B band, with maxima at about (602-632) nm and (700-730) nm for Q1 and Q2 respectively, and (340-375) nm for B band. The optical energy gap were determined from optical absorption spectra, The variation of optical energy gap with annealing temperature was nonsystematic and this may be due to the improvement in crystal structure for thin films. Whi

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Publication Date
Sun Mar 07 2010
Journal Name
Baghdad Science Journal
The Effect of Thickness on Some Optical Properties of Sb2S3 Thin Films Prepared by Chemical Bath Deposition
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Sb2S3 thin films have been prepared by chemical bath deposition on a glas sub Absorbance and transmittance spectra were recorded in the wavelength range (30-900) nm. The effects of thickness on absorption coefficient, reflectance, refractive index, extinction coefficient, real and imaginary parts of dielectric constant were estimated. It was found that the reflectivity, absorption coefficient , extinction coefficient, real part of dielectric constant and refractive index, all these parameters decrease as the thickness increased, while the imaginary part of the dielectric constant increase as the thickness incre

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Publication Date
Sat Jan 05 2019
Journal Name
Iraqi Journal Of Physics
Annealing effect on the optical properties of organic semiconductor Alq3: C60 blend thin films
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The effect of heat treatment using different annealing temperatures on optical properties of bulk heterojunction blend (BHJ) Alq3: C60 thin films which are fabricated by the spin coating technique were investigated in this study. The films have been coated on a glass substrate with speed of 2000 rpm for one min and treated with different annealing temperature (373, 423 and 473) K under vacuum. The optical properties and the chemical bonds structure of blends as-deposited and heat treated have been studied by UV-Vis spectroscopic and Fourier Transform-Infra Red (FTIR) measurements respectively. The results of UV visible show that the optical energy gap decreasing with increasing the annealing temperature for the ratio (100:1) while decrea

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