This study included collection of 100 specimens from patients in AL-Kindy Teaching Hospital and teaching laboratories of Medical City Hospitals in Baghdad during the period from August to December 2012 ,these specimens differed in their sources which included 19 nasal swab, 16 wound swab,27 burn swab, 7 pus, 15 sputum, 10 corneal swab and 6 urine . Only 38 (38%) isolates was identified as Staphylococcus. In this study, 29 isolates (76.3%) were coagulase-positive (COPS), while only 9 isolates(23.6%) were coagulase negative (CONS), from total 38 isolates of Staphylococci.
The distribution of Methicillin resistance among Staphylococcus spp. was investigated by disc diffusion method. In this study, 21 isolates (55.26%) showed resistant to

     In this paper, the effect of iron oxide nanoparticles dust (Fe₂O₃ NPs) on the parameters of DC electric discharge plasma under vacuum in argon gas was studied with the presence of a mirror magnetron behind the electrodes (cathode and anode) at constant pressure and with different amounts of Fe₂O₃ nanoparticles. Calculations presented a reduction of the plasma emission intensity with the NPs content. Both the plasma density (calculated by Stark's broadening method) and the mean electron temperature (calculated using Boltzmann's equation) decreased with increasing the Fe₂O₃ nanoparticles dust content, which indicates clearly the effect of dust density on restricting

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO₂) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators.

 Throughout the centuries, several incidents of mercury toxicity have been reported. Mercury is found in many industries such as battery, thermometer and barometer manufacturing, in the agricultural industry is used in fungicides and in medicine, mercury is used in dental amalgams. An important mechanism involved in cellular injury is induced by exposure to different forms of mercury involves in the induction of oxidative stress.      This study was conducted on non-smoker, male working in a chloroalkali plant for different periods, all workers were not suffering from chronic disease. Healthy non-smoker males that are not exposed, matched age were used as controls(C), workers aged (22-61) years, they were di

The study deals with reactivity insertion linear and non linear and/or Ramp reactivity expressed as a polynomial in time in the presence of two Feedback mechanisms, using the neutronic-thermohydraulic coupling in order to predict the neutron behavior as a function of time in terms of reactor power. Also, a comparative study has been achieved in the case of the presence of the feedback mechanisms. Insertion of Ramp reactivities in terms of polynomial in time to study the behavior of power and reactivity as a function of time in the presence of two feedback mechanisms (fuel and coolant) has been carried out and the results are displayed as plots, and showed this results corresponding with international results. The present study shows t

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators. To mo

Praise be to God, Lord of the Worlds, and prayers and peace be upon the Master of Messengers, Muhammad and his family

The good and pure and after his companions

God Almighty said: ( ) Do they not contemplate the Qur’an? If it had been from other than God, they would have found in it much discrepancy. God Almighty has made the well-being of people and their lives linked to faith in it. So what is the need of people today to return to the Book of their Lord so that they may return to the right path that God intended for His servants so that they may attain sustenance? Security and the good life. How could it not be, when many of the nations of the world no longer see security or stability because their leaders and politic

Hall effect measurements have been made on a-As2Te3 thin films different thickness film in the range (200-350) nm. The Hall mobility in a-As2Te3 thin films decreases with increasing annealing temperature but the carrier concentration increases. When increasing the film thickness increases the Hall mobility decreases, while the carrier concentration increases.