Millimetre wave semiconductor based isolators and circulators
(2)
Publication Date
Wed Oct 01 2014
Journal Name
2014 44th European Microwave Conference
(2)
Publication Date
Thu Jan 01 2015
Journal Name
Progress In Electromagnetics Research C
(5)
(4)
Publication Date
Sun Oct 01 2017
Journal Name
2017 47th European Microwave Conference (eumc)
(2)
(2)
Publication Date
Sat Jun 01 2019
Journal Name
2019 International Symposium On Networks, Computers And Communications (isncc)
(2)
Publication Date
Fri May 01 2020
Journal Name
Journal Of Electrical And Electronics Engineering
HF Wave Propagation Prediction Based On Passive Oblique
Ionosonde
Oblique Ionosonde Station
fof2 of Iraq
frequency of optimum transmission
single hopping.
High frequency (HF) communications have an important role in long distances wireless communications. This frequency band is more important than VHF and UHF, as HF frequencies can cut longer distance with a single hopping. It has a low operation cost because it offers over-the-horizon communications without repeaters, therefore it can be used as a backup for satellite communications in emergency conditions. One of the main problems in HF communications is the prediction of the propagation direction and the frequency of optimum transmission (FOT) that must be used at a certain time. This paper introduces a new technique based on Oblique Ionosonde Station (OIS) to overcome this problem with a low cost and an easier way. This technique uses the
... Show More
Publication Date
Fri May 01 2015
Journal Name
Ieee Transactions On Microwave Theory And Techniques
(3)
(3)
Publication Date
Sun Aug 13 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Electron Transfer At Semiconductor / Liquid Interfaces
Electron Transfer reaction rate constants at Semiconductor / Liquid interfaces are calculated dy using the Fermi Golden Rule for Semiconductor. The reorganization energy   eVï„ is computed for Semiconductor / Liquid Interfaces system in two solvents and compared with experimental value. The driving force (free energy) ΔGo(eV) is calculated depending on spectrum Ru(H2L`)2 (NCS)2 . The transfer is treated according with weak coupling (nonadiabatic) for two – state level between the Semiconductor and acceptor molecule state.
Publication Date
Thu May 31 2018
On the Use of 6th-Order Tunable Complementary Metal-Oxide-Semiconductor Varactor based Filter in Ultra-Wideband Low Noise Amplifier
Background: Objective: Method:
The plethora of the emerged radio frequency applications makes the frequency spectrum crowded by many applications and hence the ability to detect specific application’s frequency without distortion is a difficult task to achieve.
The goal is to achieve a method to mitigate the highest interferer power in the frequency spectrum in order to eliminate the distortion.
This paper presents the application of the proposed tunable 6th-order notch filter on Ultra-Wideband (UWB) Complementary Metal-Oxide-Semiconductor (CMOS) Low Noise
Publication Date
Sun Jan 25 2015
Journal Name
International Journal Of Applied Mathematical Research
(3)
Publication Date
Sat Apr 01 2017
Journal Name
Ieee Transactions On Microwave Theory And Techniques
(13)
(15)