The experiment was conducted to study the effect of leaves extract of Salvia sclarea , Rosmarinus officinalis and Thymus vulgaris with 10% and 30% concentration on germination of seeds and growth of seedlings . The effect of these extracts on infection percentage of seeds decay and surface growth of Rhizoctonia solani . The results showed that the three extracts effected significantly to reduced percentage of seeds germination, acceleration of germination , promoter indicator , infection percentage of seeds decay and surface growth of R. solani especially in 30% concentration .

Background: A Temporomandibular joint (TMJ) internal derangement (TMJID) is a disruption within the internal aspects of the TMJ in which the disc is displaced from its normal functional relationship with the mandibular condyle, after which the articular portion of the temporal bone causes joint dysfunction, joint sound, malocclusion, and locking of the mouth. Conservative and invasive techniques can be used for the treatment of TMJID. A platelet-rich plasma (PRP) injection is a simple, less invasive surgical procedure for the treatment of internal derangement. The objective of this study was to evaluate the efficacy of PRP injections in decreasing or eliminating pain, clicking, and limitation of mouth opening in patients with TMJID after th

The experiment was conducted to study the effect of leaves extract of Salvia sclarea , Rosmarinus officinalis and Thymus vulgaris with 10% and 30% concentration on germination of seeds and growth of seedlings . The effect of these extracts on infection percentage of seeds decay and surface growth of Rhizoctonia solani . The results showed that the three extracts effected significantly to reduced percentage of seeds germination, acceleration of germination , promoter indicator , infection percentage of seeds decay and surface growth of R. solani especially in 30% concentration .

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

THE EFFECT OF SPREACL of KNOWLEDGE ON ETHICS

Background: It is well known that the low level laser irradiation has act on immune system cells in a number of ways, one of them includes increasing phagocytic activity of irradiated cells. This study was established to shed light on the possible effect of laser irradiation on phagocytic activity of polymorphoneutrophils.
Subjects and methods: Fresh blood samples were obtained from twenty healthy volunteers for phagocytosis assay. The polymorphoneutrophils were isolated from blood and examined their phagocytic capacity befor and after exposure to laser irradiation.
Results: The present study revealed a significant increase in the mean percentage of phagocytosis after exposure to diode laser of wave le

 Anew mathematical formula was proposed to describe the behavior of the extinction coefficient as a function of ambient temperature and wavelengths for some of infrared materials. This formula was derived depending on some experimental data of transmittance spectrum versus wavelengths for many ambient temperatures. The extensive study of the spectrum characteristics and depending on Bose-Einstein distribution led to derive an equation connecting the extinction coefficient or the absorption coefficient with the ambient temperature and wavelengths of the incident rays. The basic assumption in deriving process is the decreasing in transmittance value with the increasing temperature which is only due to the changing in extinction coeffi

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators. To mo

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO₂) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators.

The influence of different thickness (500, 1000, 1500, and 2000) nm on the electrical conductivity and Hall effect measurements have been investigated on the films of copper indium gallium selenide CuIn1-xGaxSe2 (CIGS) for x= 0.6.The films were produced using thermal evaporation technique on glass substrates at R.T from (CIGS) alloy. The electrical conductivity (σ), the activation energies (Ea1, Ea2), Hall mobility and the carrier concentration are investigated and calculated as function of thickness. All films contain two types of transport mechanisms of free carriers, and increases films thickness was fond to increase the electrical cAnductivity whereas the activation energy (Ea) would vary with films thickness. Hall Effect analysis resu