Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result of dramatically increasing in leakage current. So, leakage power reduction is an important design issue for active and standby modes as long as the technology scaling increased. In this paper, a simultaneous active and standby energy optimization methodology is proposed for 22 nm sub-threshold CMOS circuits. In the first phase, we investigate the dual threshold voltage design for active energy per cycle minimization. A slack based genetic algorithm is proposed to find the optimal reverse body bias assignment to set of noncritical paths gates to ensure low active energy per cycle with the maximum allowable frequency at the optimal supply vo

This study has been undertaken to postulate the mechanism of impact test at low velocities. Thin-walled tubes of 100Cr6 were deformed under axial compression. In the present work there are seven velocities (4.429,4.652,5.240,5.600,5.942,6.264, 6.569) m\sec were applied to show how they effect the load, change in length, also the kinetic energy. However, the comparison between the obtained results and the other studies (Alexandar[3] , Abramowicz[4], Ayad[5]) was made the present work and Ayad data show good agreement. Load, change in length, kinetic energy were determined to understand the impact test.

The numerical simulation for the low frequency waves in dusty plasma has been studied. The studying was done by taking two special cases depending on the direction of the propagation of the wave:First, when the propagation is parallel to the magnetic field K//B,this mode is called acoustic mode.Second,when K B this mode is called cyclotron mode.In addition, every one of the two modes divided into two modes depending on the range of the frequency.The Coulomb coupling parameter was studied, with temperature T,density of the dust particles Nd ,and the charge of the particle Qd.The low frequency electrostatic waves in dusty grains were studied. Also, the properties of ion-acoustic waves and ion-cyclotron waves are shown to modify even through

Model birefringence was measured for elliptical-core fibers with low ellipticities, note the birefringence depends strongly on the frequency, especially when fiber is being operated near the higher mode cutoff where ν  for circular fiber of the single-mode type that correspond to the birefringence maximum. When ν  this also correspond to the birefringence maximum that can be introduced in an elliptical core fiber while still operating in the single-mode regime near the higher mode cutoff. Also the birefringence is proportional to the fiber core ellipticity when core ellipticity is much less than unity, but this birefringence deviates from the linear for the large core ellipticities.

   The aim of this paper is to determine the capability of the ultrasonic technique to predicate and evaluate some elastic and geotechnical properties within sand stone layers. For this purpose, 15 rock samples were collected from Tanjero Formation that is exposed in Dokan area, northeastern Iraq. Elastic wave velocities (Vp and Vs)  and density (P) values for rock samples were determined by applying laboratory testing. From Vp, Vs, and density values, the porosity, elastic modulus, and some geotechnical parameters were calculated. The relationship between P wave velocity and elastic properties of samples was derived. Empirical equations were obtained by applying the regression analyses between Vp and the measured

In this paper, a comparison between horizontal and vertical OFET of Poly (3-Hexylthiophene) (P3HT) as an active semiconductor layer (p-type) was studied by using two different gate insulators (ZrO₂ and PVA). The electrical performance output (I_d-V_d) and transfer (I_d-V_g) characteristics were investigated using the gradual-channel approximation model. The device shows a typical output curve of a field-effect transistor (FET). The analysis of electrical characterization was performed in order to investigate the source-drain voltage (V_d) dependent current and the effects of gate dielectric on the electrical performance of the OFET. This work also considered the effects of the