Recently, Image enhancement techniques can be represented as one of the most significant topics in the field of digital image processing. The basic problem in the enhancement method is how to remove noise or improve digital image details. In the current research a method for digital image de-noising and its detail sharpening/highlighted was proposed. The proposed approach uses fuzzy logic technique to process each pixel inside entire image, and then take the decision if it is noisy or need more processing for highlighting. This issue is performed by examining the degree of association with neighboring elements based on fuzzy algorithm. The proposed de-noising approach was evaluated by some standard images after corrupting them with impulse

Producing pseudo-random numbers (PRN) with high performance is one of the important issues that attract many researchers today. This paper suggests pseudo-random number generator models that integrate Hopfield Neural Network (HNN) with fuzzy logic system to improve the randomness of the Hopfield Pseudo-random generator. The fuzzy logic system has been introduced to control the update of HNN parameters. The proposed model is compared with three state-ofthe-art baselines the results analysis using National Institute of Standards and Technology (NIST) statistical test and ENT test shows that the projected model is statistically significant in comparison to the baselines and this demonstrates the competency of neuro-fuzzy based model to produce

The main idea of this paper is to define other types of a fuzzy local function and study the advantages and differences between them in addition to discussing some definitions of finding new fuzzy topologies. Also in this research, a new type of fuzzy closure has been defined, where the relation between the new type and different types of fuzzy local function has been studied

   The aim of this paper is to introduce and study new class of fuzzy function called fuzzy semi pre homeomorphism in a fuzzy topological space by utilizing fuzzy semi pre-open sets. Therefore, some of their characterization has been proved; In addition to that we define, study and develop corresponding to new class of fuzzy semi pre homeomorphism in fuzzy topological spaces using this new class of functions.

In the present work, the feasibility of formation near-ideal ohmic behavior of In/n-Si contact efficiently by 300 s duration Nd:YAG pulsed laser processing has been recognized. Several laser pulses energy densities have been used, and the optimal energy density that gives best results is obtained. Topography of the irradiated region was extensively discussed and supported with micrographic illustrations to determine the surface condition that can play the important role in the ohmic contact quality. I-V characteristics in the forward and reverse bias and barrier height measurements have been studied for different irradiated samples to determine the laser energy density that gives best ohmic behavior. Comparing the current results with

      In this work, we introduced and studied  a new kind of soft mapping  on soft topological spaces with an ideal, which we called  soft strongly generalized mapping with respect an ideal I, we studied the concepts like SSIg-continuous, Contra-SSIg-continuous, SSIg-open, SSIg-closed and SSIg-irresolute mapping  and  the relations between these kinds of mappings and the composition of two mappings of the same type of two different types, with proofs or counter examples

In this research, thin films of CdO: Mg and n-CdO: Mg/ p-Si heterojunction with thickness (500±50) nm have been deposited at R.T (300 K) by thermal evaporation technique. These samples have been annealed at different annealing temperatures (373 and 473) K for one hour. Structural, optical and electrical properties of {CdO: Mg (1%)} films deposited on glass substrate as a function of annealing temperature are studied in detail. The C-V measurement of n-CdO: Mg/ p-Si heterojunction (HJ) at frequency (100 KHz) at different annealing temperatures have shown that these HJ were of abrupt type and the builtin potential (Vbi) increase as the annealing temperature increases. The I-V characteristics of heterojunction prepared under dark case at