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The Effects of Inclination and Compounds Angles of Round Holes in Staggered Rows on Adiabatic Film Cooling Effectiveness of Vane Suction side
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The aim of this work is oriented to increase film cooling effectiveness value through numerical investigations for flow of Mach number not more than 0.3 around vane surface, to find the effects of inclination and compounds angles of round holes in staggered rows on adiabatic film cooling effectiveness of vane suction side. Multi cylindrical film cooling hole cases were studied with pitch ratio P/d =2 and 3, local blowing ratios M=0.382, 0.77 and 1.14,  inclination angles a=30° and 45°, compound angles β= 0°, 15°, 30° and 45° and local momentum ratios I= 0.084, 0.34 and 0.756  for better cooling process.

            A numerical technique, using ANSYS-FLUENT version 14.5, was used to solve governing partial differential equations of mass, momentum (Navier Stokes equations) and energy conservations in three dimensions with a  turbulence model that involves the solution of the four transport equations. Based on the results of the numerical solution, the best film cooling configuration, blowing ratio, with the range of actual engine flow conditions, dimensions and vane geometry; density ratio 1.74 , temperature ratio 0.57 and blowing ratio M=0.382, 0.77 and 1.14 was obtained. The best case for inclination angle a=30°, P/d=2 was at M=1.14 and β=0° for the total average effectiveness along 60L/d of surface suction side was 0.616, while the best case for inclination angle a=45°, P/d=2 was at M=0.382 and β=30° for the total average effectiveness along 60L/d of surface suction side was 0.516.

            In addition, comparisons were performed with available other work, where the experimental total average effectiveness results of Dees et al., 2011 were in good agreements with the numerical results of current work with a maximum deviation of 9.9% at I=0.34 and 3.6% at I=0.75.

 

 

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Publication Date
Sun Sep 06 2009
Journal Name
Baghdad Science Journal
Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
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The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induced permanent damage in SiC irradiated by gamma source. TEACO2 laser used for producing SiC thin films. Spectrophotometer lambda - UV, Visible instrument is used to determine energy gap (Eg). Co-60, Cs-137, and Sr-90 are used to irradiate SiC samples for different time of irradiation. Possible interpretation of the changing in Eg values as the time of irradiation change is discussed

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