Let R be a commutative ring with identity and M be a unitary R- module. We shall say that M is a primary multiplication module if every primary submodule of M is a multiplication submodule of M. Some of the properties of this concept will be investigated. The main results of this paper are, for modules M and N, we have M N and HomR (M, N) are primary multiplications R-modules under certain assumptions.

The main goal of this paper is to introduce and study a new concept named d^*-supplemented which can be considered as a generalization of W- supplemented modules and d-hollow module. Also, we introduce a d^*-supplement submodule. Many relationships of d^*-supplemented modules are studied. Especially, we give characterizations of d^*-supplemented modules and relationship between this kind of modules and other kind modules for example every d-hollow (d-local) module is d^*-supplemented and by an example we show that the converse is not true.

Let R be associative ring with identity and M is a non- zero unitary left module over R. M is called M- hollow if every maximal submodule of M is small submodule of M. In this paper we study the properties of this kind of modules.

    Throughout this work we introduce the notion of Annihilator-closed submodules, and we give some basic properties of this concept. We also introduce a generalization for the Extending modules, namely Annihilator-extending modules. Some fundamental properties are presented as well as  we discuss the relation between this concept and some other related concepts.

Let R be a commutative ring with 1 and M be a (left) unitary R – module. This essay gives generalizations for the notions prime module and some concepts related to it. We termed an R – module M as semi-essentially prime if annR (M) = annR (N) for every non-zero semi-essential submodules N of M. Given some of their advantages characterizations and examples, and we study the relation between these and some classes of modules.

Pure SnSe thin film and doped with S at different percentage (0,3,5,7)% were deposited from alloy by thermal evaporation technique on glass substrate at room temperature with 400±20nm thickness .The influences of S dopant ratio on characterization of SnSe thin film Nano crystalline was investigated by using Atomic force microscopy(AFM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), Hall Effect measurement, UV-Vis absorption spectroscopy to study morphological, structural, electrical and optical properties respectively .The XRD showed that all the films have polycrystalline in nature with orthorhombic structure, with preferred orientation along (111)plane .These films was manufactured of very fine crystalline size in the ra

During of Experimental result of this work , we found that the change of electrical conductivity proprieties of tin dioxide with the change of gas concentration at temperatures 260oC and 360oC after treatment by photons rays have similar character after treatment isothermally. We found that intensive short duration impulse annealing during the fractions of a second leads to crystallization of the films and to the high values of its gas sensitivity.