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Optical and Structural Properties of SnO2 Thin Films Prepared by Sputtering Method
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SnO2 thin films of different two thicknesses were prepared an glass substrate by DC magnetron sputtering. The crystal structure and orientation of the films were investigated by XRD patterns. All the deposited films are polycrystalline. The grain size was calculated as 25.35, 28.8 nm. Morphological and compositions of the films were performed by SEM and EDX analyses respectively. The films appeared compact and rougher surface in nature. The allowed direct band gap was evaluated as 3.85 eV, and other optical constants such as refractive index, extinction coefficient, real and imaginary parts of dielectric constants were determined from transmittance spectrum in the wavelength range (300-900) nm and also analyzed.
 

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Publication Date
Tue Feb 01 2022
Journal Name
Journal Of Ovonic Research
Effect of copper on physical properties of CdO thin films and n-CdO: Cu / p-Si heterojunction
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Publication Date
Tue Feb 01 2022
Journal Name
Journal Of Ovonic Research
Effect of copper on physical properties of CdO thin films and n-CdO: Cu / p-Si heterojunction
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Scopus (14)
Scopus
Publication Date
Tue May 28 2024
Journal Name
Journal Of Optics
Study of the optical properties of aluminum films and the effect of current frequency on plasma parameters
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Publication Date
Sun Mar 06 2011
Journal Name
Baghdad Science Journal
Studying of the optical properties of poly (vinyl alcohol) films using Aluminum sulphate as additive by measuring allowed direct transition energy gap
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The change in the optical band gap and optical activation energy have been investigated for pure Poly (vinyl alcohol)and Poly (vinyl alcohol) doped with Aluminum sulphate to proper films from their optical absorption spectra. The absorption spectra were measured in the wave range from (200-700) nm at temperature range (25-140) 0C. The optical band gap (Eg) for allowed direct transition decrease with increase the concentration of Aluminum sulphate. The optical activation energy for allowed direct transition band gap was evaluated using Urbach- edges method. It was found that ?E increases with increasing the concentration of Al2 (SO4)3 and decreases when temperature increases.

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Crossref
Publication Date
Mon Apr 24 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Influence of Gamma Radiation on Some Optical Properties and Urbach Energy of (PMMA- Doped Red Methyl) Films
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  We have studied the effect of gamma irradiation on the optical transmission, absorbance, absorption coefficient,  and Urbach energy for (PMMA- doped red methyl) film deposited by using solvent casting method .The optical transmission (T %) in the wavelength range (1901100 ) nm of films was measured , it was seen that all the parameters were affected by gamma irradiation.

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Publication Date
Sat May 30 2020
Journal Name
Neuroquantology
Synthesis and Study NiO Charactrization of Extract from Green Tea Plant Prepared by Chemical Method
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Publication Date
Tue May 20 2025
Journal Name
Iraqi Journal Of Applied Physics
Effect of Gas Mixing Ratio on Energy Band Gap of Mixed-Phase Titanium Dioxide Nanostructures Prepared by Reactive Magnetron Sputtering Technique
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Publication Date
Tue Sep 17 2013
Journal Name
International Journal Of Engineering And Innovative Technology (ijeit)
Study of Optical Properties (Linear and Nonlinear) and Structures for CdS Thin Film Preparation in Spray Pyrolysis Technique
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Publication Date
Thu Jan 17 2019
Journal Name
Energy Procedia
Irradiation of the thin films of MnS with fast neutrons and the possibility of using the new characteristics in optical detector
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The optical detectors which had been used in medical applications, and especially in radioactive treatments, need to be modified studied for the effects of radiations on them. This study included preparation of the MnS thin films in a way that vacuum thermal evaporation process at room temperature 27°C with thickness (400+-10nm) nm and a sedimentation rate of 0.39nm/sec on glass floors. The thin films prepared as a detector and had to be treated with neutron irradiation to examine the results gained from this process. The results decay X-ray (XRD) showed that all the prepared thin films have a multi-crystalline structure with the dominance of the direction (111), the two samples were irradiated with a neutron irradiation source (241Am-9Be)

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Scopus (1)
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Publication Date
Wed Apr 19 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
A study of Some Electrical Properties of Te:S Thin Films Deposited at Angle Ó¨=70o
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       In this research a study of some electrical properties Of (Te) thin films with(S) impurities of(1.2%) were deposited at( Ó¨=700)by thermal evaporation technique .The  thicknesses of deposited films were (1050 , 1225 , 1400 , 1575  nm) on a glass substrates of different dimensions . From X-ray diffraction spectrum, the films are polycrystalline .A study of (I-V) characteristic for thin films, the measurements of electrical conductivity (σ)and electrical resistance(R )vs. temperature( T) are done. Further a measurement of thermoelectric power, see beck coefficient and activation energies ( Ea, Es) were computed

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