Different thicknesseses of polycrystalline ZnTe films have been deposited on to glass substrates by vacuum evaporation technique under vacuum 2.1x10-5 mbar. The structural characteristics studied by X-ray diffraction (XRD) showed that the films are polycrystalline and have a cubic (zinc blende ) structure. The calculated microstructure parameters revealed that the crystallite size increases with increasing film thicknesses. The optical measurements on the deposited films were performed in different thicknesseses [ 400 , 450 and 500]nm, to determine the transmission spectrum and the absorption spectra as a function of incident wavelength. The optical absorption coefficient (α) of the films was determined from transmittance spectra in the range of wavelength (400-1100) nm. The dependence of absorption coefficient, on the photon energy showed the occurrence of a direct transition with band gap energy from 2.24eV to 1.92eV (for ZnTe films of different thicknesseses), where with high film thicknesses there are several energy levels resulting in several overlapping energy bands in the band gap of these films. The overlapping energy bands therefore tend to reduce the energy band gap, resulting in lower band gaps for thicker films.
This study thoroughly investigates the potential of niobium oxide (Nb2O5) thin films as UV-A photodetectors. The films were precisely fabricated using dc reactive magnetron sputtering on Si(100) and quartz substrates, maintaining a consistent power output of 50W while varying substrate temperatures. The dominant presence of hexagonal crystal structure Nb2O5 in the films was confirmed. An increased particle diameter at 150°C substrate temperature and a reduced Nb content at higher substrate temperatures were revealed. A distinct band gap with high UV sensitivity at 350 nm was determined. Remarkably, films sputtered using 50W displayed the highest photosensitivity at 514.89%. These outstanding optoelectronic properties highlight Nb2O5 thin f
... Show MoreVacuum gas oil (611-833)K was distilled from Kirkuk crude oil, which was obtained by blending the following fraction,
light vacuum gas oil (611 - 650) K, medium vacuum gas oil (650-690)K, heavy vacuum gas oil (690-727)K and very
heavy vacuum gas oil (727-833)K.
The vacuum gas oil was hydrotreated on a commercial cobalt-molybdenum alumina catalyst presulfied at specified
condition in a laboratory trickle bed reactor. The reaction temperature varied from (583-643)K over liquid hourly space
velocity ranging between (1.5-3.75)h-1 , Hydrogen pressure was kept constant at 3.5 MPa with a hydrogen to oil ratio
of about 250 L/L
The conversion results for desulfurization appeared to obey the second order kinetics. According to
Thin films Tin sulfide SnS pure and doped with different ratios of Cu (X=0, 0.01, 0.03 and 0.05) were prepared using thermal evaporation with a vacuum of 4*10-6mbar on two types of substrates n-type Si and glass with (500) nm thickness for solar cell application. X-ray diffraction and AFM analysis were carried out to explain the influence of Cu ratio dopant on structural and morphological properties respectively. SnS phase appeared forming orthorhombic structure with preferred orientation (111), increase the crystallinity degree and surface roughness with increase Cu ratio. UV/Visible measurement revealed the decrease in energy gap from 1.9eV for pure SnS to 1.5 for SnS: Cu (0.05) making these samples suitable f
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Free-Space Optical (FSO) can provide high-speed communications when the effect of turbulence is not serious. However, Space-Time-Block-Code (STBC) is a good candidate to mitigate this seriousness. This paper proposes a hybrid of an Optical Code Division Multiple Access (OCDMA) and STBC in FSO communication for last mile solutions, where access to remote areas is complicated. The main weakness effecting a FSO link is the atmospheric turbulence. The feasibility of employing STBC in OCDMA is to mitigate these effects. The current work evaluates the Bit-Error-Rate (BER) performance of OCDMA operating under the scintillation effect, where this effect can be described by the gamma-gamma model. The most obvious finding to emerge from the analysis
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In this work, we are Study the effect of annealing temperature on the structure of a-Ge films doped with Sb and the electrical properties of a-Ge:Sb/c-Si heterojunction fabricated by deposition of a-Ge:Sb film on c-Si by using thermal evaporation. Electrical properties of aGe:Sb/c-Si heterojunction include I-V characteristics in dark at different annealing temperatures and C-V characteristics and with the C-V characteristics suggest that the fabricated heterojunction was abrupt type, built in potential determined by extrapolation from 1/C2-V curve and show that the built - inpotential (Vbi) for the Ge:Sb/Si system increases with the increase of annealing temperatures
Ultrasonic pulse echo measurements on porous alumina as ceramic
material with porosities ranging from (20-40)% showed effect of volume
fraction of porosity on both thermal and elastic properties. A quadratic relationships, by using a least squares method, is deduced for the dependence of the shear velocity, longitudinal velocity, shear modulus, Young's modulus, bulk modulus, Poisson 's ratio, Debye temperature, specific heat, and thermal conductivity on the total porosity. By these relationships, the thermal and elastic properties results of pore-free alumina were calculated. The elastic properties results of
... Show MoreThis contribution reports a comprehensive investigation into the structural, electronic and thermal properties of bulk and surface terbium dioxide (TbO2); a material that enjoys wide spectra of catalytic and optical applications. Our calculated lattice dimension of 5.36 Å agrees well with the corresponding experimental value at 5.22 Å. Density of states configuration of the bulk structure exhibits a semiconducting nature. Thermo-mechanical properties of bulk TbO2 were obtained based on the quasi-harmonic approximation formalism. Heat capacities, thermal expansions and bulk modulus of the bulk TbO2 were obtained under a wide range of temperatures and pressures. The dependency of these properties on operational pressure is very evident. Cle
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This study uses the optical emission spectroscopy (OES) technique to find the lead(Pb) and sulfur (S) plasma parameters employing a pulse of Nd: YAG laser (Q-switched 1064nm wavelength) and different laser energies of (400,500,600 and 700 mJ). The electron temperature Te (eV) is calculated using the Boltzmann-Plot method, and the electron density ne (cm-3)is determined by the Stark broadened way. Moreover, Debye length λD (cm) and plasma frequency ωp (Hz) are studied as a function of laser energy. An apparent increase was noted in the electron temperature of lead plasma and a decrease in sulfur plasma. The results also showed that each increase in the laser intensity causes an incr
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