In this paper we find the exact solution of Burger's equation after reducing it to Bernoulli equation. We compare this solution with that given by Kaya where he used Adomian decomposition method, the solution given by chakrone where he used the Variation iteration method (VIM)and the solution given by Eq(5)in the paper of M. Javidi. We notice that our solution is better than their solutions.

The Boltzmann equation has been solved using (EEDF) package for a pure sulfur hexafluoride (SF6) gas and its mixtures with buffer Helium (He) gas to study the electron energy distribution function EEDF and then the corresponding transport coefficients for various ratios of SF6 and the mixtures. The calculations are graphically represented and discussed for the sake of comparison between the various mixtures. It is found that the various SF6 – He content mixtures have a considerable effect on EEDF and the transport coefficients of the mixtures

Let  be a prime ring,  be a non-zero ideal of  and   be automorphism on. A mapping  is called a multiplicative (generalized)  reverse derivation if  where  is any map (not necessarily additive). In this paper, we proved the commutativity of a prime ring R admitting a multiplicative (generalized)  reverse derivation  satisfying any one of the properties:

 for all x, y  

The cross section evaluation for (α,n) reaction was calculated according to the available International Atomic Energy Agency (IAEA) and other experimental published data . These cross section are the most recent data , while the well known international libraries like ENDF , JENDL , JEFF , etc. We considered an energy range from threshold to 25 M eV in interval (1 MeV). The average weighted cross sections for all available experimental and theoretical(JENDL) data and for all the considered isotopes was calculated . The cross section of the element is then calculated according to the cross sections of the isotopes of that element taking into account their abundance . A mathematical representative equation for each of the element

          It is well known that the wreath product  is the endmorphism monoid of a free S-act with n-generators. If S is a trivial semigroup then  is isomorphic to . The extension  for  to  where  is an independent algebra has been investigated. In particular, we consider  is to be , where  is a free left S-act of n-generators. The eventual goal of this paper is to show that  is an endomorphism monoid of a free left S-act of n-generators and to prove that  is embedded in the wreath product .

     This paper is used for solving component Volterra nonlinear systems by means of the combined Sumudu transform with Adomian decomposition process. We equate the numerical results with the exact solutions to demonstrate the high accuracy of the solution results. The results show that the approach is very straightforward and effective.

 In this paper, we introduce and discuss an algorithm for the numerical solution of some kinds of fractional integral and fractional integrodifferential equations. The algorithm for the numerical solution of these equations is based on iterative approach. The stability and convergence of the fractional order numerical method are described. Finally, some numerical examples are provided to show that the numerical method for solving the fractional integral and fractional integrodifferential equations is an effective solution method.

In this research, Mn-doped TiO2 thin films were grown on glass, Si and OIT/glass substrates by R.F magnetron sputtering technique with thicknesses (250 nm) using TiO2:Mn target under Ar gas pressure and power of 100 Watt. Through the results of X-ray diffraction, the prepared thin films are of the polycrystallization type after the process of annealing at 600°C for two hour The average crystalline size were 145.32, 280.97 and 261.23 nm for (TiO2:Mn) thin film on glass, Si and OIT/glass substrates respectively, while the measured surface roughness is between 0.981nm and 1.14 nm. The fabricated (TiO2:Mn) thin film on glass sensors have high sensitivity for hydrogen( H2 reducing gas) compared to the sensitivity for hydrogen gas on Si and OIT/