Nitrogen (N) and phosphorus (P) are the most important nutrients for crop production. The N contributes to the structural component, generic, and metabolic compounds in a plant cell. N is mainly an essential part of chlorophyll, the compound in the plants that is responsible for photosynthesis process. The plant can get its available nitrogen from the soil by mineralizing organic materials, fixed-N by bacteria, and nitrogen can be released from plant as residue decay. Soil minerals do not release an enough amount of nitrogen to support plant; therefore, fertilizing is necessary for high production. Phosphorous contributes in the complex of the nucleic acid structure of plants. The nucleic acid is essential in protein synthesis regulation; t

         Saccharomyces cerevisiae filtrate showed inhibitory effect against Fusarium spp. when grow in a liquid medium (Sabouraud) with different concentrations (1, 3, 5) %. The higher inhibitory effect against fungus growth was (24.5) mm at (5%) in PDA medium compared with control (36.5) mm during the seventh day propagation. The filtrate of Lactobacillus plantarum isolate was mixed with the PDA medium ,which showed inhibitory effect against Fusarium spp. The concentrated filtrate( one fold) appcarcd a  higher effect against the same fungus compared with un concentrated filtrate one. Saceharomyces cerevisiae and Lactobacillus plantarum

The electrical properties of pure NiO and NiO:Au Films which are
deposited on glass substrate with various dopant concentrations
(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Co
annealing temperature will be presented. The results of the hall effect
showed that all the films were p-type. The Hall mobility decreases
while both carrier concentration and conductivity increases with the
increasing of annealing temperatures and doping percentage, Thus,
indicating the behavior of semiconductor, and also the D.C
conductivity from which the activation energy decrease with the
doping concentration increase and transport mechanism of the charge
carriers can be estimated.

The   electrical     properties   of   thin   film    interdigital    metal­

phthalocyanine - metal devices have been studied with regard to purity and electrode material . Devices utilising phthalocyanines ( H2 Pc ,

NiPc and CuPc) films with Au, Ag , Cu ' In and AI electrodes have been prepared with Pc layers fabricated  from  both as - supplied  Pc powder and entrainer - subeimed  material . The results indicate that

sublimed phthalocyanine with gold electrodes offers the best material

combination with regard to linearity , reversibility and reproducibility. Measurements  of  current &nbs

Thin films of iridium doped indium oxide (In2O3:Eu)with different doping ratio(0,3,5,7,and 9%) are prepared on glass and single crystal silicon wafer substrates using spray pyrolysis method. The goal of this research is to investigate the effect of doping ratio on of the structural, optical and sensing properties . The structure of the prepared thin films was characterized at room temperature using X-ray diffraction. The results showed that all the undoped and doped (In2O3:Eu)samples are polycrystalline in structure and nearly stoichiometric. UV-visible spectrophotometer in the wavelength range (200-1100nm)was used to determine the optical energy gap and optical constants. The optical transmittance of 83% and the optical band gap of 5.2eV

The thermoelectric power (S) of thermal evaporated a-InAs films

were measured in the temperature rang (303-408) K.

These films were prepared at different thickness (250,350,450) nm and treated at different annealing temperatures (303,373,423,473,523) K.

The behaviour  of the thermoelectric power  studies of these films

as  a  function  of  thickness  and  annealing  temperature  showed  the thermoelectric  power an increasing trend with annealing temperature

,whereas it decreases as the film thickness increases.