In this paper, Cu2S/CdS solar cells were prepared with different thickness of CdS layer, these layers were prepared by using chemical spray pyrolysis technique. The chemical spray solution was prepared by mixing cadmium chloride CdCl2 and thiourea CS(NH2)2 of molar concentration 0.1 M/L, the CdS layer was formed after the solution was sprayed on hot Aluminum substrate at temperature 400°C. Experimentally the type of CdS film was found as n–type depending on the results of Hall Effect, the value of the Hall factor (RH) is about – 1.348 x 10–6 m3/C and the density of the majority charge carriers (N) is about 4.64x1018 cm–3. The prepared film was tested by using X-Ray diffraction; the result shows that the film was CdS with a polycrystalline structure. The Cu2S layer was prepared by using Chemical dip process; this layer was formed on the surface of the CdS film and it is always p-type. The heat treatment was utilized to form the p–n junction. The current-voltage characteristics of p-Cu2S\n-CdS solar cells was studied, the efficiency of the prepared cells of different thickness; (2.19, 2.52, 3.64, and 5.55) μm of CdS layer was calculated at 85.4 mW/cm2 light intensities, the results show that the thickness of the polycrystalline CdS film is an important parameter affecting the cell efficiency.
In this research, we investigate and evaluate the efficiency of a hetero junction N749- device based on a simple donor-acceptor model for electron transfer. Electron transfer from a photo-excited N749 sensitized into a wide-band gap is the basic charge separation in dye-sensitized solar cells, or "DSSCs". Due to the understanding of the current of the DSSCs functioning mechanism, the energy levels of the hetero junction N749- device surrounded by DCM solvent as polar media must be continuum levels. The current-voltage (J-V) characteristics of the N749- device are calculated in two concentrations at room temperature (T=300 k) and 100 irradiation. The fill factor and efficiency of the device are found to be 0.134 and 6.990 for con
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In this work, we have investigated optical properties of the thermally evaporation PbS/CdS thin films. The optical constant such as (refractive index n, dielectric constant εi,r and Extinction coefficient κ) of the deposition films were obtained from the analysis of the experimental recorded transmittance spectral data. The optical band gap of PbS/CdS films is calculate from (αhυ)1/2 vs. photon energy curve.
Density Functional Theory at the generalized-gradient approximation level coupled with large unit cell method is used to simulate the electronic structure of (II-VI) zinc-blende cadmium sulfide nanocrystals that have dimensions 2-2.5 nm. The calculated properties include lattice constant, conduction and valence bands width, energy of the highest occupied orbital, energy of the lowest unoccupied orbital, energy gap, density of states etc. Results show that lattice constant and energy gap converge to definite values. However, highest occupied orbital, lowest unoccupied orbital fluctuates indefinitely depending on the shape of the nanocrystal.
In this paper the effects of the contact material on the photovoltaic (PV) characteristics of p-NiO:Au/n-Si solar cells fabricated by using the pulsed laser deposition (PLD) technique had been studied. It shown the p-NiO:Au/n-Si could be successfully used to construct and improve the performance of solar cells by using Au. The conversion efficiency was increased comparable with p-NiO/n-Si solar cells. In this case the NiO:Au layer acts as a hole collector as well as a barrier for charge recombination.
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Different coating layers of fluorescent agent (FCA) on the solar cells were used. An increase of 35% in the energy conversion efficiency of the solar cell have been obtained. This increase is attributed to the reduction ofthe reflected light, eflection spectra show low values at higher thickness which explained the increase ofthe conversion efficiency with increases of layer thickness.
Optoelectronic devices, widely used in high energy and nuclear physics applications, suffer severe radiation damage that leads to degradations in its efficiency. In this paper, the influence of gamma radiation (137Ce source) and beta radiation (90Sr source) on the photoelectric parameters of the Si solar cell, based on the I–V characterization at different irradiation exposer, has been studied. The penetrating radiation produces defects in the base material, may be activated during its lifetime, becoming traps for electron–hole pairs produced optically and, this will, decrease the efficiency of the solar cell. The main objective of the paper is to study and measure changes in the I–V characteristics of solar cells, such as efficienc
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