Alloys were performed from In2O3 doped SnO2 with different doping ratio by quenching from the melt technique. Pulsed Laser Deposition PLD was used to deposit thin films of different doping ratio In2O3 : SnO2 ( 0, 1, 3, 5, 7 and 9 % wt.) on glass substrate at ambient temperature under vacuum of 10 -3 bar thickness of ~100nm. The structural type ,grain size and morphology of the prepared alloys compounds and thin films were examined using X-ray diffraction and atomic force microscopy . The results showed that all alloys have polycrystalline structures and the peaks belonged to the preferred plane for crystal growth were identical with the ITO (Indium – Tin –Oxide) standard cards also another peaks were observed belonged to SnO2 phase. The structures of thin films was also polycrystalline , and the predominate peaks are identical with standard cards ITO . On the other side the prepared thin films declared decrease a reduction of degree of crystallinity with the increase of doping ratio. Atomic Force Microscopy AFM measurements showed the average grain size and average surface roughness exhibit to change in systematic manner with the increase of doping ratio with tin oxide. The optical measurements show that the In2O3:SnO2 thin films have a direct energy gap Eg opt in the first stage decreases with the increase of doping ratio and then get to increase with further increase of doping ration, whereas reverse to that the optical constants such as refractive index (n), extinction coefficient (k) and dielectric constant (εr, εi) have a regular increase with the doping ratio by tin oxide and then decreases.
The dielectric permittivityεand ac conductivityσac of CuInSeTe thin films were measured at temperatures in the range of 303–453 K and frequencies in the range of 100 Hz–10 MHz. It is found that the ac activation energy estimated from the Arrhenius equation is 0.1004 eV which increases with substrate temperature and decreases with the increase of frequency. The exponentsshows a progressive increase withTs. The results are explained in terms of structural difference by the effect ofTs and thermal treatment.
In this article, the influence of group nano transition metal oxides such as {(MnO2), (Fe2O3) and (CuO)} thin films on the (ZnO-TiO2) electric characteristics have been analyzed. The prepared films deposited on glass substrate laser Nd-YAG with wavelength (ℷ =1064 nm) ,energy of (800mJ) and number of shots (400). The density of the film was found to be (200 nm) at room temperature (RT) and annealing temperature (573K).Using DC Conductivity and Hall Effect, we obtained the electrical properties of the films. The DC Conductivity shows that that the activation energies decrease while the σRT at annealing temperature with different elements increases the formation of mixed oxides. The Hall effect, the elec
... Show MoreEnhancing asphalt binder performance against anticipated distresses is a critical focus in pavement engineering. This study investigates the synergistic influence of nano titanium dioxide (NT) and nano zinc oxide (NZ) on asphalt binder performance. Nine NT:NZ combinations (1:1 to 3:3) were prepared with 1–3% by binder weight, in addition to a reference binder (RB). The performance test program included; conventional tests (penetration, softening point, viscosity, and ductility), Dynamic Shear Rheometer (DSR) for performance grading, Multiple Stress Creep Recovery (MSCR) for rutting evaluation, and Linear Amplitude Sweep (LAS) for fatigue resistance. Furthermore, Statistical analysis (ANOVA) was performed to determine the significa
... Show MoreIn this study, Epoxy Resin plates was prepared by mixing epoxy(A) and hardner(B)with ratio(A:B) (3:1) with different thickness (0.3-0.96)cm. The effect of thickness on optical properties have been studied (absorption ,transmission ,reflectance) also the optical constant were found like (absorption coefficient, extenuation coefficient and refraction index) for all of the prepared plates. The results have shown that by increasing the thickness of plates., the absorption intensity increase in which at plates thickness (0.3-0.96)cm the absorption intensity were(1.54-1.43) respectively, and since absorption peak for epoxy occur in ultraviolet region and exactly at wavelength(368)nm and energy gap(Eg=3.05 eV) thus their good transmittance in the
... Show MoreDental implants can be made of various materials, and amongst them, titanium and titanium alloy were the materials of choice for dental implants for many years because of their biocompatibility. The two alloys have a high level of biocompatibility, a lower modulus of elasticity, and better corrosion resistance than other alloys. Thus, they are frequently utilized in biomedical applications and mostly replace stiff fabrics. The latest advances in a new strontium oxide–cp titanium composite alloy are the main topic of this research. With regard to biomedical applications, additions of strontium oxide were synthesized at three distinct weight percentages (2%, 4%, and 6% by wt%). Powder metallurgy was used to create the alloys, which
... Show More(Sb2S3)1-xSnx thin films with different concentrations (0, 0.05 and
0.15) and thicknesses (300,500 and 700nm) have been deposited by
single source vacuum thermal evaporation onto glass substrates at
ambient temperature to study the effect of tin content, thickness and
on its structural morphology, and electrical properties. AFM study
revealed that microstructure parameters such as crystallite size, and
roughness found to depend upon deposition conditions. The DC
conductivity of the vacuum evaporated (Sb2S3)1-x Snx thin films was
measured in the temperature range (293-473)K and was found to
increase on order of magnitude with
In this paper Alx Ga1-x As:H films have been prepared by using new deposition method based on combination of flash- thermal evaporation technique. The thickness of our samples was about 300nm. The Al concentration was altered within the 0 x 40.
The results of X- ray diffraction analysis (XRD) confirmed the amorphous structure of all AlXGa1-x As:H films with x 40 and annealing temperature (Ta)<200°C. the temperature dependence of the DC conductivity GDC with various Al content has been measured for AlXGa1-x As:H films.
We have found that the thermal activation energy Ea depends of Al content and Ta, thus the value of Ea were approximately equal to half the value of optical gap.
This survey investigates the thermal evaporation of Ag2Se on glass substrates at various thermal annealing temperatures (300, 348, 398, and 448) °K. To ascertain the effect of annealing temperature on the structural, surface morphology, and optical properties of Ag2Se films, investigations and research were carried out. The crystal structure of the film was described by Xray diffraction and other methods.The physical structure and characteristics of the Ag2Se thin films were examined using X-ray and atomic force microscopy (AFM) based techniques. The Ag2Se films surface morphology was examined by AFM techniques; the investigation gave average diameter, surface roughness, and grain size mutation values with increasing annealing temperature
... Show MorePolyacrylonitrile:Polypyrole (PAN:PPy) undoped and doped with graphene Nano composites were synthesized using casting methods. Optical properties were utilized to describe the effect of composite ratio PAN/PPy as well as doping with Nanoscale graphene on the energy gap and the optical constants. PAN/PPy undoped and doped with Nanoscale graphene was used to detect gas nitrogen dioxide. In this article, the effect of mixing PAN with PPy at different weight ratios without addition and with the addition of 2% nanoscale graphene to the previous mixture on gas sensing performance on a large scale is explored. The results showed that doping with graphene enhanced the performance of gas sensing properties. Moreover, the article whic
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