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The optoelectronic properties of CdSe:Cu photoconductive detector

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Publication Date
Thu Dec 01 2011
Journal Name
Iraqi Journal Of Physics
Influence of doping concentration on the main parameters of CdSe:Cu photoconductor detector

The photonconductor detectors CdSe:Cu was fabricated as a thin film of (1 μm) in thickness using vacuum evaporation technique. doping with copper was made using vacuum annealing at 350oC under argon atmosphere . The spectral responsivity and spectral detectivity of the detector were determined as a function of incident wavelength on the sample. A remarkable improvement in performance was absorbed for the specimen, which doping with (1-5 wt%) Cu.
The spectral response increases with increasing of wavelength for incident radiation to maximum value, after that , it reduced sharply . There is a shifting for peak responsivity indirect of higher wavelength. The detectivity was increased with doping but its decreased as the concentration in

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Publication Date
Thu Jan 01 2015
Journal Name
International Journal Of Application Or Innovation In Engineering & Management
Far Infrared Photoconductive Detector Based on Multi-Wall Carbon Nanotubes

Far infrared photoconductive detectors based on multi-wall carbon nanotubes (MWCNTs) were fabricated and their characteristics were tested. MWCNTs films deposited on porous silicon (PSi) nanosurface by dip and drop coating techniques. Two types of deposited methods were used; dip coating sand drop –by-drop methods. As well as two types of detector were fabricated one with aluminum mask and the other without, and their figures of merits were studied. The detectors were illuminated by 2.2 and 2.5 Watt from CO2 of 10.6 􀀀m and tested. The surface morphology for the films is studied using AFM and SEM micrographs. The films show homogeneous distributed for CNTs on the PSi layer. The root mean square (r.m.s.) of the films surface roughness in

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Publication Date
Sun Mar 01 2009
Journal Name
Baghdad Science Journal
The structure and optical properties of CdSe:Cu Thin Films

A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation technique in the substrate temperature range(Ts=RT-250)oC on glass substrates of the thickness(0.8?m). The structure of these films are determined by X-ray diffraction (XRD). The X-ray diffraction studies shows that the structure is polycrystalline with hexagonal structure, and there are strong peaks at the direction (200) at (Ts=RT-150) oC, while at higher substrate temperature(Ts=150-250) oC the structure is single crystal. The optical properties as a function of Ts were studied. The absorption, transmission, and reflection has been studied, The optical energy gap (Eg)increases with increase of substrate temperature from (1.65

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Publication Date
Sat Mar 01 2008
Journal Name
Iraqi Journal Of Physics
Influence of Gold Concentration on the Main Detection Parameters of Ge-Au Photoconductive Detector

Ge-Au infrared photoconductive detection was prepared from germanium single crystal which were doped with different gold concentration using thermal evaporation. The spectral resonsivity (Rλ), spectral detectivity (D*) were determined as function of wavelength, also the resistance, conductivity in dark and with illumination to infrared radiation, the gain and relative photo response have been measured with different gold concentration. Remarkable improvements in the photoresponse gain were observed for the highest resistance specimen at the expense of spectral detectivity values.

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Publication Date
Wed Mar 10 2021
Journal Name
Baghdad Science Journal
the photoconductive properties of pbxs1-x films

Optical detector was manufactured Bashaddam thermal evaporation technique at room temperature under pressure rays studied characteristics of reactive Scout efficiency quantitative ratio of the signal and the ability equivalent to noise

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Publication Date
Wed Sep 01 2021
Journal Name
Iraqi Journal Of Physics
Enhancement of Photoconductive Detector Based on Carbon Nanotubes Decorated with Silver Nanoparticles by Adding Conductive Polymer

In this work, wide band range photo detector operating in UV, Visible and IR was fabricated using carbon nanotubes (MWCNTs, SWCNTs) decorated with silver nanoparticles (Ag NPs). Silicon was used as a substrate to deposited CNTs/Ag NPs by the drop casting technique. Polyamide nylon polymer was used to coat CNTs/Ag NPs to enhance the photo-response of the detector. The electro-exploding wire technology was used to synthesize Ag NPs. Good dispersion of silver NPs achieved by a simple chemistry process on the surface of CNTs. The optical, structure and electrical characteristic of CNTs decorated with Ag NPs were characterized by X-Ray diffraction and Field Emission Scanning Electron Microscopy.  X-ray diffra

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Publication Date
Fri Jan 01 2021
Journal Name
Microchemical Journal
A flow analysis system integrating an optoelectronic detector for the quantitative determination of active ingredients in pharmaceutical formulations

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Publication Date
Tue Oct 25 2022
Journal Name
Chalcogenide Letters
Study the properties of Cu2Se thin films for optoelectronic applications

Copper selenide (Cu2Se) thin films were prepared by thermal evaporation at RT with thickness 500 nm. The heat-treating for (400 &500) K for the absorber layer has been investigated. This research includes, studying the structural properties of X-ray diffraction (XRD) that show the Cu2Se thin film (Cubic) and has a polycrystalline orientation prevalent (220). Moreover, studying the effect of annealing on their surface morphology properties by using Atomic Force Microscopy AFM. Optical properties were considered using the transmittance and absorbance spectra had been recorded when wavelength range (400 - 1000) nm in order to study the absorption coefficient and energy gap. It was found that these films had allowed direct transitio

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Publication Date
Thu Nov 01 2001
Journal Name
Renewable Energy
Optoelectronic properties of a-Si1−xGex:H thin films

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Publication Date
Mon Jun 01 2015
Journal Name
The European Physical Journal Applied Physics
A carbon nanotubes photoconductive detector for middle and far infrared regions based on porous silicon and a polyamide nylon polymer

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