In this paper, we investigate the basic characteristics of "magnetron sputtering plasma" using the target V₂O₅. The "magnetron sputtering plasma" is produced using "radio frequency (RF)" power supply and Argon gas. The intensity of the light emission from atoms and radicals in the plasma measured by using "optical emission spectrophotometer", and the appeared peaks in all patterns match the standard lines from NIST database and employed are to estimate the plasma parameters, of computes electron temperature and the electrons density. The characteristics of V₂O₅ sputtering plasma at multiple discharge provisos are studied at the "radio frequency" (RF) power ranging from 75 - 150 Wat

     In this work, plasma parameters such as electron density (n_e), electron temperature (T_e), Debye length (λ_D), plasma frequency (f_Plasma), and Debye number (N_D) for Cu plasma produced by Pin-Plate DC discharge were studied. Spectroscopic technique was used to analyze and determine spectral emission lines. The value of the electron density for Cu was in the range (1.5–3.5)×10¹⁸cm^-3 and for the electron temperature was in the range ( 1.31 – 1.61)eV. Finally, plasma parameters of Cu were caculated through plasma produced by Pin-Plate DC discharge using different voltages (600-900) V.

Thin films ZrO₂: MgO nanostructure have been synthesized by a radio frequency magnetron plasma sputtering technique at different ratios of MgO (0,6, 8 and  10)% percentage to be used as the gas sensor for nitrogen dioxide NO₂. The samples were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and sensing properties were also investigated. The average particle size of all prepared samples was found lower than 33.22nm and the structure was a monoclinic phase. The distribution of grain size was found lower than36.3 nm and uninformed particles on the surface. Finally, the data of sensing properties have been discussed, where the

      The current study involves an experimental investigation of plasma main parameters of a DC discharge with a hollow cathode (HCD) geometry in air using apertures of different diameters from the hollow cathode (1, 1.5, 2, and 2.5 cm). A tiny Langmuir probe is used to investigate the plasma properties. The HCD was operated at constant power of 12.4 W and gas pressures ranging between 0.1 to 0.8 torr. It was observed that the operational conditions strongly affect the electron temperature and density, while the hollow cathode diameter has not much influence. The main important observation was that at relatively high air pressure (>0.4 torr) two electron temperatures were obtained, while at relatively low pressure (<0.4 torr)

This work describes, selenium (Se) films were deposited on clean glass substrates by dc planar magnetron sputtering technique.The dependence of sputtering deposition rate of Se film deposited on pressure and DC power has been studied. The optimum argon pressure has range (4x10-1 -8x10-2 )mbar. The optical properties such as absorption coefficient (α) was determined using the absorbance and transmission measurement from UnicoUV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-850 nm. And also we calculated optical constants(refractive index (n), dielectric constant (εi,r), and Extinction coefficient (κ) for selenium films.

      This study shows the effects of copper material electrode, applied voltage, and different pressure values on electrical discharge plasma. The purpose of the work is the application of the spectral analysis method to obtain accurate results of nitrogen plasma parameters. By using the optical emission spectroscopy (OES), many N₂ molecular spectra peaks appeared in the range from 300 to 480 nm. Also, some additional peaks were recorded, corresponding to atomic and ionic lines for nitrogen, target material, and hydrogen, in all samples. The electron density (n_e) was calculated from the measurement of Stark broadening effect, which was found to decrease with increasing pressure from 0.1 mba

This work introduces the synthesis and the characterization of N-doped TiO2 and Co3O4 thin films prepared via DC reactive magnetron sputtering technique. N-doped TiO2 thin films was deposited on indium-tin oxide (ITO) conducting substrate at different nitrogen ratios, then the Co3O4 thin film was deposited onto the N-doped TiO2 layer to synthesize a double-layer TiO2-N/Co3O4 Photoelectrochromic device. Several techniques were used to characterize the produces which are x-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), Fourier-transform infrared (FTIR) spectroscopy and UV–Vis spectroscopy. The Photoelectrochromic device was characterized by UV–Vis spectroscopy and the results show that the double-layer N-dope

In this research, Mn-doped TiO2 thin films were grown on glass, Si and OIT/glass substrates by R.F magnetron sputtering technique with thicknesses (250 nm) using TiO2:Mn target under Ar gas pressure and power of 100 Watt. Through the results of X-ray diffraction, the prepared thin films are of the polycrystallization type after the process of annealing at 600°C for two hour The average crystalline size were 145.32, 280.97 and 261.23 nm for (TiO2:Mn) thin film on glass, Si and OIT/glass substrates respectively, while the measured surface roughness is between 0.981nm and 1.14 nm. The fabricated (TiO2:Mn) thin film on glass sensors have high sensitivity for hydrogen( H2 reducing gas) compared to the sensitivity for hydrogen gas on Si and OIT/