The characteristics of atmospheric-pressure glow discharge (APGD) produced by rod-plate electrodes are experimentally determined. APGD is sustained by applying a high DC voltage between the electrodes. At atmospheric pressure, the shift from corona discharge to glow discharge is investigated. A rod-plate discharges configuration's volt–ampere properties show the existence of three discharge regimes: corona, glow, and spark. The variations in the electrical field distribution in the various regimes are mirrored in the discharge luminosity. The rod-plate patterns are created under a dark region, and are visible mainly due to the effect of electrons heated by the local enhanced electric field at the interface, according to the op

Cu X Zn1-XO films with different x content have been prepared by
pulse laser deposition technique at room temperatures (RT) and
different annealing temperatures (373 and 473) K. The effect of x
content of Cu (0, 0.2, 0.4, 0.6, 0.8) wt.% on morphology and
electrical properties of CuXZn1-XO thin films have been studied.
AFM measurements showed that the average grain size values for
CuXZn1-xO thin films at RT and different annealing temperatures
(373, 473) K decreases, while the average Roughness values increase
with increasing x content. The D.C conductivity for all films
increases as the x content increase and decreases with increasing the
annealing temperatures. Hall measurements showed that there are
two

Structural and optical properties of CdO and CdO0.99Cu0.01 thin
films were prepared in this work. Cadmium Oxide (CdO) and
CdO0.99Cu0.01semiconducting films are deposited on glass substrates
by using pulsed laser deposition method (PLD) using SHG with Qswitched
Nd:YAG pulsed laser operation at 1064nm in 6x10-2 mbar
vacuum condition and frequency 6 Hz. CdO and CdO0.99Cu0.01 thin
films annealed at 550 C̊ for 12 min. The crystalline structure was
studied by X-ray diffraction (XRD) method and atomic force
microscope (AFM). It shows that the films are polycrystalline.
Optical properties of thin films were analyzed. The direct band gap
energy of CdO and CdO0.99Cu0.01 thin films were determined from
(αhυ)1/2 v

Zinc oxide thin films were deposited by chemical spray pyrolysis onto glass substrates which are held at a temperature of 673 K. Some structural, electrical, optical and gas sensing properties of films were studied. The resistance of ZnO thin film exhibits a change of magnitude as the ambient gas is cycled from air to oxygen and nitrogen dioxide

      In this study, the plasma formed by the preparation of Se and Tin (Sn) using a Nd: YAG laser with a wavelength of 1064 nm in air, which was then studied using the technique of optical emission spectrum, was presented (OES).The laser-induced plasma parameters such an electron temperature (Te) were identified using two-ratio methods, using Stark broadening methods to determine the density of electrons (n_e). According to the findings, there is a correlation between the amount of laser energy that is applied and the increase in the emission intensity of the spectral lines. In the case of Se plasma, an increase in laser energy causes a rise in the temperature of the electrons. While increasing the temperature of the elec

Visible-light photodetectors constructed Fe2O3 were manufactured effectively concluded chemical precipitation technique, films deposited on glass substrate and Si wafer below diverse dopant (0,2,4,6)% of Cl, enhancement in intensity with X-ray diffraction analysis was showed through favored orientation along the (110) plane, the optical measurement presented direct allowed with reduced band gap energies thru variation doping ratio , current–voltage characteristics Fe2O3 /p-Si heterojunction revealed respectable correcting performance in dark, amplified by way of intensity of incident light, moreover good photodetector properties with enhancement in responsivity occurred at wavelength between 400 nm and 470 nm.

Thin films of pure tin mono-sulfide SnS and tin mono-sulfide for (1,2,3,4)% fluorine SnS:F with Thicknesses of (0.85 ±0.05) ?m and (0.45±0.05) ?m respectively were prepared by chemical spray pyrolysis technique. the effect of doping of F on structural and optical properties has been studied. X-Ray diffraction analysis showed that the prepared films were polycrystalline with orthorhombic structure. It was found that doping increased the intensity of diffraction peaks. Optical properties of all samples were studied by recording the absorption and transmission spectrum in range of wave lengths (300-900) nm. The optical energy gap for direct forbidden transi

In the present work, the effect of isolated dust particles (FeO) with radius of the grain 0.1μm - 0.5μm of main plasma characteristics are investigated experimentally in direct current system by using magnetic field. The present of dust particle in the air plasma did effect on Paschen minimum and on the plasma properties in low pressure region. The effect of dust particles on discharge voltage, discharge current, plasma potential, floating potential, electron density, electron temperature and Debye length was investigation by using magnetic field. The measurements of parameters are taken by four cylindrical Langmuir probes. The results show the present of dust causes decreasing in discharge voltage with increase pressure while the disc

         Beryllium Zinc Oxide (Be_xZn_1-xO) ternary nano thin films were deposited using the pulsed laser deposition (PLD) technique under a vacuum condition of 10^-3 torr at room temperature on glass substrates with different films thicknesses, (300, 600 and 900 nm). UV-Vis spectra study found the optical band gap for Be_0.2Zn_0.8O to be  (3.42, 3.51 and 3.65 eV) for the (300, 600 and 900nm) film thicknesses, respectively which is larger than the value of zinc oxide ZnO (3.36eV) and smaller than that of beryllium oxide BeO (10.6eV). While the X-ray diffraction (XRD) pattern analysis of ZnO, BeO and Be _0.2 Zn _0.8 O powder and nano-thin films indicated a hexa