Capacitive–resistive humidity sensors based on polythiophene (P3HT) organic semiconductor as an active material hybrid with three types of metallic nanoparticles (NP) (Ag, Al, and Cu) were synthesized by pulsed laser ablation (PLA). The hybrid P3HT/metallic nanoparticles were deposited on indium-tin-oxide (ITO) substrate at room temperature. The surface morphology of theses samples was studied by using field emission scanning electron micrographs (FE-SEM), which indicated the formation of nanoparticles with grain size of about 50nm. The electrical characteristics of the sensors were examined as a function of the relative humidity levels. The sensors showed an increase in the capacitance with variation in the humidity level. While the resistivity While the resistivity decrease nonlinearity in the variation of humidity level from 10% to 100%.. The results show that the recovery and response times were higher for the Al/P3HT/Cu/Al sensor compared with those of the other nanoparticles.
Polyaniline Multi wall Carbon nanotube (PANI/MWCNTs) nanocomposite thin films have been prepared by Plasma jet polymerization at low frequency on glass substrate with preliminary deposited aluminum electrodes to form Al/PANI-MWCNT/Al surface-type capacitive humidity sensors, the gap between the electrodes about 50 μm and the MWCNTs weight concentration varied between 0, 1, 2, 3, 4%. The diameter of the MWCNTs was in the range of 8-15 nm and the length 10-55 μm. The capacitance-humidity relationships of the sensors were investigated at humidity levels from 35 to 90% RH. The electrical properties showed that the capacity increased with increasing relative humidity, and that the sensitivity of the sensor increases with the increase of the
... Show MorePhotonic Crystal Fiber Interferometers (PCFIs) are greatly used
for sensing applications. This work presents the fabrication and
characterization of a relative humidity sensor based on Mach-
Zehnder Interferometer (MZI), which operates in reflection mode.
The humidity sensor operation based on the adsorption and
desorption of water vapour at the silica-air interface within the PCF.
The fabrication of this sensor is simple, it only includes splicing and
cleaving the PCF with SMF.PCF (LMA-10) with a certain length
spliced to SMF (Corning-28).
The spectrum of PCFI exhibits good sensitivity to humidity
variations. The PCFI response is observed for a range of humidity
values from (27% RH to 85% RH), the positi
The junction between polythiophene, a conducting polymer formed by electrochemical polymerization, and n-type silicon was studied the temperature and doping dependencies were observed in the junction characteristics. The increase of junction temperature leads to increase the saturation current, the barrier height, and decrease of the ideality factor for junction. While the reduction in doping concentration causes a decrease in the forward current. The results were explained according to the conventional Schottky diode theories.
Porous Silicon (PS) layer has been prepared from p-type silicon by electrochemical etching method. The morphology properties of PS samples that prepared with different current density has been study using atom force measurement (AFM) and it show that the Layer of pore has sponge like stricture and the average pore diameter of PS layer increase with etching current density increase .The x-ray diffraction (XRD) pattern indicated the nanocrystaline of the sample. Reflectivity of the sample surface is decrease when etching current density increases because of porosity increase on surface of sample. The photolumenses (PL) intensity increase with increase etching current density. The PL is affected by relative humidity (RH) level so we can use
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