The work done in this paper to study properties for nitrogen plasma generated by method electrical discharge when the aluminum was a target. Experimental study on the effect electrodes material, applied voltages on spectroscopic parameter for DC discharge plasma in Nitrogen gas using planner electrodes were done.

     The electron temperature, increase with increasing applied voltage from (700 to 1100) V. While the plasma density, calculate by Stark broadening effect, which increase with it.

     The peaks intensities for N2 transition (λ= 336.6 nm and 391.4 nm) increase with increasing applied voltage. The vibrational energy (TVib) for N2 molecular increase from 0.165 to 0.185 eV

Structural and optical properties of CdO and CdO0.99Cu0.01 thin
films were prepared in this work. Cadmium Oxide (CdO) and
CdO0.99Cu0.01semiconducting films are deposited on glass substrates
by using pulsed laser deposition method (PLD) using SHG with Qswitched
Nd:YAG pulsed laser operation at 1064nm in 6x10-2 mbar
vacuum condition and frequency 6 Hz. CdO and CdO0.99Cu0.01 thin
films annealed at 550 C̊ for 12 min. The crystalline structure was
studied by X-ray diffraction (XRD) method and atomic force
microscope (AFM). It shows that the films are polycrystalline.
Optical properties of thin films were analyzed. The direct band gap
energy of CdO and CdO0.99Cu0.01 thin films were determined from
(αhυ)1/2 v

The electrical properties of pure NiO and NiO:Au Films which are
deposited on glass substrate with various dopant concentrations
(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Co
annealing temperature will be presented. The results of the hall effect
showed that all the films were p-type. The Hall mobility decreases
while both carrier concentration and conductivity increases with the
increasing of annealing temperatures and doping percentage, Thus,
indicating the behavior of semiconductor, and also the D.C
conductivity from which the activation energy decrease with the
doping concentration increase and transport mechanism of the charge
carriers can be estimated.

     In the current study, the emission spectra generated from clove were measured under normal atmospheric pressure with different laser energies. Clove is used as a source of essential oil in herbal medicine, in particular as a dynamic analgesic oil in dental and other diseases. For aromatherapy, Antiseptic, antiviral, and antimicrobial agents are also packaged with cloves. Compounds that reduce inflammation tend to battle sore throats, cold, and cough as they display so many advantages. The measured spectrum reveals distinctive lines of clove’s chemical elements. X-ray fluorescent (XRF) and atomic absorption spectrometry (AAS) were used to measure the spectrum generated or absorbed by detecting the presence of va

In this work, ZnS thin films have been deposited by developed laser deposition technique on glass substrates at room temperature. After deposition process, the films were annealed at different temperatures (200ºC , 300 ºC and 400ºC ) using thermal furnace.The developed technique was used to obtain homogeneous thin films of ZnS depending on vaporization of this semiconductor material by continuous CO2 laser with a simple fan to ensure obtaining homogeneous films. ZnS thin films were annealed at temperature 200ºC, 300 ºC and 400ºC for (20) minute in vacuum environment. Optical properties of ZnS thin film such as absorbance, transmittance, reflectance, optical band gap, refractive index extinction coefficient and absorption coefficien

Pulsed laser deposition (PLD) technique was applied to prepared Chromium oxide (Cr₂O₃) nanostructure doped with Titanium oxide (TiO₂) thin films at different concentration ratios 3,5,7 and 9 wt % of TiO₂. The effect of TiO₂ dopant on the average size of crystallite of the synthesized nanostructures was examined by X-ray diffraction. The morphological properties were discussed using atomic force microscopy(AFM). Observed optical band gap value ranged from 2.68 eV to 2.55 eV by ultraviolet visible(UV-Vis.) absorption spectroscopy with longer wave length shifted  in comparison with that of the bulk Cr₂O₃ ~3eV. This indicated that the synthesized samples a

Plasma generated by a 1064 nm pulsed Nd: YAG laser with pulse duration of 10 ns concentrated onto an Al solid target under vacuum pressure was examined spectroscopically. The temperature and electron density specifying the plasma were measured by time-resolved spectroscopy of neutral atom and ion line emissions in the time period range of 300–2000 ns. An echelle spectrograph is utilized to appear the plasma emission lines. The temperature was obtained using the spectral line comparison method and the electron density was calculated using the Stark Broadening (SB) method. The electron density was characterized as a function of laser pulse energy. The time range where the plasma is optically thin and is also in local thermodynamic equilibri

In this paper Zener diode was designed by mixing three mixing ratios of Ag₂O_(1-x)ZnO_(x), where x is 0.5, 0.3, and 0.1, that are deposited on a p-type porous silicon using laser induced plasma technique at room temperature (RT). The results of the Zener diode showed a decrease in knee and Zener voltage when the mixing ratio of Ag₂O_(1-x)ZnO_(x) structure was increased. Nanofilms of 200nm thickness were prepared from pure ZnO and Ag₂O as well as Ag₂O_(1-x)ZnO_(x) with three maxing ratios and deposited on glass slides at RT to analyze the structure and optical properties. The structures of Ag₂O and Ag₂O

        In this paper Zener diode was manufactured using ZnO-CuO-ZnO/Si heterojunction structure that used laser induced plasma technique to prepare the nanofilms. Six samples were prepared with a different number of laser pulses, started with 200 to 600 pulses on ZnO tablet with fixed the number of laser pulses on CuO tablet at 300 pulses. The pulse energy of laser deposited was 900mJ using ZnO tablet and 600mJ using CuO tablet. All prepared films shown good behavior as Zener diode when using porous silicon as substrate.