In this work, the optical emission spectrum technique was used to analyze the spectrum resulting from the CdO:Sn plasma produced by laser Nd:YAG with a wavelength of (1064) nm, duration of (9) ns, and a focal length of (10) cm in the range of energy of 500-800 mJ. The electron temperature (T_e) was calculated using the in ratio line intensities method, while the electron density (n_e) was calculated using Saha-Boltzmann equation. Also, other plasma parameters were calculated, such as plasma (f_p), Debye length (λ_D) and Debye number (N_D). At mixing ratios of X=0.1, 0.3 and 0.5, the CdO_1-X :Sn_X plasma spectrum was recorded for different energies. The change

In this paper Zener diode was designed by mixing three mixing ratios of Ag₂O_(1-x)ZnO_(x), where x is 0.5, 0.3, and 0.1, that are deposited on a p-type porous silicon using laser induced plasma technique at room temperature (RT). The results of the Zener diode showed a decrease in knee and Zener voltage when the mixing ratio of Ag₂O_(1-x)ZnO_(x) structure was increased. Nanofilms of 200nm thickness were prepared from pure ZnO and Ag₂O as well as Ag₂O_(1-x)ZnO_(x) with three maxing ratios and deposited on glass slides at RT to analyze the structure and optical properties. The structures of Ag₂O and Ag₂O

      In this paper, the optical emission spectrum (OES) technique was used to analyze the spectrum resulting from the (CdO:CoO)  plasma in air, produced by Nd:YAG laser with λ=1064 nm, τ=10 ns, a focal length of 10 cm, and a range of energy of 200-500 mJ. We identified laser-induced plasma parameters such as electron temperature (T_e) using Boltzmann plot method, density of electron (n_e), length of Debye (λ_D), frequency of plasma (f_p), and number of Debye (N_D), using two-Line-Ratio method. At a mixing ratio of X= 0.5, the (CdO:CoO) plasma spectrum was recorded for different energies. The results of plasma parameters caused by laser showed that, with t

In this study, doped thin cadmium peroxide films were prepared by pulsed laser deposition with different doping concentrations of aluminium of 0.0, 0.1, 0.3, and 0.5 wt.% for CdO2(1-X)Al(X) and thicknesses in the range of 200 nm. XRD patterns suggest the presence of cubic CdO2 and the texture factor confirms that the (111) plane was the preferential growth plane, where the texture factor and the grain size decreased from 2.02 to 9.75 nm, respectively, in the pure sample to 1.88 and 5.65 nm, respectively, at a concentration of 0.5 wt%. For the predominant growth plane, the deviation of the diffraction angle Δθ and interplanar distance Δd from the standard magnitudes was 2.774° and 0.318 Å, respectively, for the pure sample decreased to

The sample's physical characteristics and laser parameters impact the generation and characterization of Laser-Induced Plasma (LIP), which is a relevant phenomenon in many applications. We investigated the effect of laser energy on laser-induced Zn plasma characterization in this study. A Zn plasma with a repeating frequency of 6 Hz, a first wavelength of 1064 nm, a pulse duration of 10 ns, and a laser energy range of 300 mJ to 500 mJ was created using a Q-switched ND: YAG laser. The basic plasma properties, such as electron temperature and density, were estimated using optical emission spectroscopy (OES). The electrons' temperature was measured by the Boltzmann plot method, and the value of the electrons' temperature ranged from 1.6 eV

The work done in this paper to study properties for nitrogen plasma generated by method electrical discharge when the aluminum was a target. Experimental study on the effect electrodes material, applied voltages on spectroscopic parameter for DC discharge plasma in Nitrogen gas using planner electrodes were done.

     The electron temperature, increase with increasing applied voltage from (700 to 1100) V. While the plasma density, calculate by Stark broadening effect, which increase with it.

     The peaks intensities for N2 transition (λ= 336.6 nm and 391.4 nm) increase with increasing applied voltage. The vibrational energy (TVib) for N2 molecular increase from 0.165 to 0.185 eV

In this work ,pure and doped(CdO)thin films with different concentration of V2O5x (0.0, 0.05, 0.1 ) wt.% have been prepared on glass substrate at room temperature using Pulse Laser Deposition technique(PLD).The focused Nd:YAG laser beam at 800 mJ with a frequency second radiation at 1064 nm (pulse width 9 ns) repetition frequency (6 Hz), for 500 laser pulses incident on the target surface At first ,The pellets of (CdO)1-x(V2O5)x at different V2O5 contents were sintered to a temperature of 773K for one hours.Then films of (CdO)1-x(V2O5)x have been prepared.The structure of the thin films was examined by using (XRD) analysis..Hall effect has been measured in orded to know the type of conductivity, Finally the solar cell and the effici

In this work, plasma parameters such as, the electron temperature )Te(, electron density ne, plasma frequency )fp(, Debye length )λD(
and Debye number )ND), have been studied using optical emission spectroscopy technique. The spectrum of plasma with different values of energy, Pb doped CuO at different percentage (X=0.6, 0.7, 0.8) were recorded. The spectroscopic study for these mixing under vacuum with pressure down to P=2.5×10-2 mbar. The results of electron temperature for X=0.6 range (1.072-1.166) eV, for X=0.7 the Te range (1.024-0.855) eV and X=0.8 the Te is (1.033-0.921) eV. Optical properties of CuO:Pb thin films were determined through the optical transmission method using ultraviolet visible spectrophotometer within the ra

      This study shows the effects of copper material electrode, applied voltage, and different pressure values on electrical discharge plasma. The purpose of the work is the application of the spectral analysis method to obtain accurate results of nitrogen plasma parameters. By using the optical emission spectroscopy (OES), many N₂ molecular spectra peaks appeared in the range from 300 to 480 nm. Also, some additional peaks were recorded, corresponding to atomic and ionic lines for nitrogen, target material, and hydrogen, in all samples. The electron density (n_e) was calculated from the measurement of Stark broadening effect, which was found to decrease with increasing pressure from 0.1 mba

Abstract

Semiconductor-based gas sensors were prepared, that use n-type tin oxide (SnO₂) and  tin oxide: zinc oxide composite (SnO₂)_1-x(ZnO)_x at different x ratios using pulse laser deposition at room temperature. The prepared thin films were examined to reach the optimum conditions for gas sensing applications, namely X-ray diffraction, Hall effect measurements, and direct current conductivity. It was found that the optimum crystallinity and maximum electron density, corresponding to the minimum charge carrier mobility, appeared at 10% ZnO ratio. This ratio appeared has the optimum NO₂ gas sensitivity for 5% gas concentration at 300 °C working temperat