The influence of different thickness (500, 1000, 1500, and 2000) nm on the electrical conductivity and Hall effect measurements have been investigated on the films of copper indium gallium selenide CuIn1-xGaxSe2 (CIGS) for x= 0.6.The films were produced using thermal evaporation technique on glass substrates at R.T from (CIGS) alloy.     The electrical conductivity (σ), the activation energies (Ea1, Ea2), Hall mobility and the carrier concentration are investigated and calculated as function of thickness. All films contain two types of transport mechanisms of free carriers, and increase films thickness was fond to increase the electrical conductivity whereas the activation energy (Ea) would vary with f

   In this research the electrical conductivity and optical measurements were made on the Iron Oxide (Fe2O3) films prepared by chemical spray pyrolysis method as a function of thickness (250, 350, 450, and 550)  20 nm.    The measurements of electrical conductivity (σ), activation energies (Ea1, Ea2),and optical constant such as absorption coefficient, refractive index, extinction coefficient and the dielectric constants for the wavelengths in the range (300-900) nm have been investigated on (Fe2O3) thin films as a function of thickness. All films contain two types of transport mechanisms, and the electrical conductivity (σ) increases whereas the activation energy (Ea) would decrease as the films thi

   In this research the electrical conductivity measurements were made on the amorphous InAs films prepared by thermal evaporation method in thickness 450 nm and annealed in different temperatures in the range (303- 573) K.        The electrical conductivity (σ) showed a decreasing trend with the increasing annealing temperature, while the activation energies (Ea1, Ea2) showed an opposite trend, where the activation energies are increased with the annealing temperature.

In this research CdTe and CdTe: Cu thin films with different doping ratios (1, 2, 3, 4 and 5) %, were deposited by thermal evaporation technique under vacuum on glass substrates at room temperature in thickness 450 nm.      The measurements of electrical conductivity (σ), and activation energies (Ea1, Ea2),  have been investigated on (CdTe) thin films as a function of doping ratios, as well as the effect of the heat treatment at (373, 423, and 473) K° for one hour on these measurements were calculated and all results are discussed.     The electrical conductivity measurements show all films prepared contain two types of transport mechanisms, and the electrical conductivity (σ) increases where

       Optical properties and surface morphology of pure and doped Polystyrene films with different divalent metals of Zn, Cu and Sn and one concentration percentage have been studied. Measurements of UV-Vis spectrophotometer and AFM spectroscopy were determined. The absorbance, transmittance and reflectance spectrums were used to study different optical parameters such as absorption coefficient, refractive index, extinction coefficient and energy gap in the wavelengths rang 200-800nm. These parameters have increased in the presence of the metals. The change in the calculated values of energy gaps with doping metals content has been investigated in terms of PS matrix structural modification. The value of opt

Iraqi calcium bentonite was activated via acidification to study its structural and electrical properties. The elemental analysis of treated bentonite was determined by using X-ray fluorescence while the unit crystal structure was studied through X-ray diffraction showing disappearance of some fundamental reflections due to the treatment processes. The surface morphology, on the other hand, was studied thoroughly by Scanning Electron microscopy SEM and Atomic Force Microscope AFM showing some fragments of montmorillonite sheets. Furthermore, the electrical properties of bentonite were studied including: The dielectric permittivity, conductivity, tangent loss factor, and impedance with range of frequency (0.1-1000 KHz) at different temperatu

In this paper, A.C conductivity of micro and nano grain size- TiO2 filled epoxy composites is measured. The dielectric material used is epoxy resin, while micro and nano-sized titanium dioxide (TiO2) of grain size (1.5μm, and 50nm) was used as filler at low filler concentrations by weight (3%, and 5%). Additionally the effect of annealing temperature range (293-373)º K and at a frequency range of 102-106 Hz on the A.C conductivity of the various specimens was studied.
The result of real permittivity for micro and nanocomposite show that the real permittivity increases with decreasing frequency at range of 102-106Hz. The micron-filled material has a higher real relative permittivity than the nano-filled this is true at all the temper

The effect of different doping ratio (0.3, 0.5, and 0.7) with thickness in the range 300nmand annealed at different temp.(Ta=RT, 473, 573, 673) K on the electrical conductivity and hall effect measurements of AgInTe2thin film have and been investigated AgAlxIn(1-x) Te2 (AAIT) at RT, using thermal evaporation technique all the films were prepared on glass substrates from the alloy of the compound. Electrical conductivity (σ), the activation energies (Ea1, Ea2), Hall mobility and the carrier concentration are investigated as a function of doping. All films consist of two types of transport mechanisms for free carriers. The activation energy (Ea) decreased whereas electrical conductivity increases with increased doping. Results of Hall Effect

 In this research the Cobalt Oxide (Co3O4) films are prepared by the method of chemical spray pyrolysis deposition at different thicknesses such that (250, 350, 450, and 550) ± 20 nm.      The optical measurement shows that the Co3O4 films have a direct energy gap, and they in general increase with the increase of the thickness. The optical constants are investigated and calculated such as absorption coefficient, refractive index, extinction coefficient and the dielectric constants for the wavelengths in the range (300-900) nm.     The electrical conductivity (σ) and the activation energies (Ea1, Ea2) have been investigated on (Co3O4) thin films as a function of thickness. The films

PVC-LiF composites films with different lithium fluoride (LiF) concentrations (0, 30, 50, and 70 weight %) were prepared by using the casting method. This research deals with the investigation of dielectric properties for PVC-LiF composite films as a function of frequency and temperature in the ranges of 100 to 10⁷ Hz and 293 - 370 K, respectively. The A.C activation energy values estimated from Arrhenius equation were 0.03820, 0.3174, 0.2009, and 0.1845 eV for the different PVC-LiF films with different LiF concentrations, respectively.  It was found that the activation energy decreases by increasing LiF concentration and frequency. The exponent (s) showed a progressive increase with LiF for PVC-LiF films, while it showed