Lead-free ferroelectric nano ceramics of BaZrxTi1-xO3 (x=0.1, 0.2 and 0.3) were prepared by means of microwave assisted chemical route. The structural, dielectric and electrical properties were examined. The crystalline structure of the specimens was studied by X-ray diffraction patterns. All the samples showed pure single phase of perovskite structure with space group of I4/mcm. X-ray diffraction data illustrated that there is no secondary phases exist. Structural and electrical properties of barium titanate ceramics are influenced significantly by small additions of Zr. The electrical conductivity showed higher values at x=0.2 and decreased at higher Zr content. The Hall charge mobility is found

      In this work, the effect of laser energy on the properties of a calcium plasma generated by a Q-switched Nd: YAG laser at the fundamental wavelength was studied using spectroscopy. The Boltzmann plot and Stark broadening method were used to measure the main plasma parameters (electron temperature and electron density). The electron temperature ranged ( 0.169 -0.172 ) eV, the electron density ranged ( 2.10 – 2.63 ) for laser energy range of ( 400 – 700) mJ. Other basic plasma properties were also measured, including the Debye length, the number of particles in the Debye sphere, and the plasma frequency. Laser energy affects all plasma parameters, according to our results.

     In this research, the electrical conductivity and Hall effect measurements have been investigated on the CuInTe2 (CIT) thin films prepared by thermal evaporation technique on glass substrate at room temperature as a function of annealing temperature (R.T,473,673)K for different thicknesses (300 and 600) nm. The samples were annealed for one hour.    The electrical conductivity analysis results demonstrated that all samples prepared have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), and the electrical conductivity increases with the increase of annealing temperature whereas it showed opposite trend with thickness , where the electrical conductivity would d

The gas sensing properties of Co₃O₄ and Co₃O₄:Y nano structures were investigated. The films were synthesized using the hydrothermal method on a seeded layer. The XRD, SEM analysis and gas sensing properties were investigated for Co₃O₄ and Co₃O₄:Y thin films. XRD analysis shows that all films are polycrystalline in nature, having a cubic structure, and the crystallite size is (11.7)nm for cobalt oxide and (9.3)nm for the Co₃O₄:10%Y. The SEM analysis of thin films obviously indicates that Co₃O₄ possesses a nanosphere-like structure and a flower-like structure for Co₃O₄:Y.

The sen

This research aims to find a method to synthesize nanoparticles of important metals in the fields of medicine and electronics, with high purity small in size and narrow size distribution. And it characterized by simplicity, efficiency and high productivity. To achieve this aim the effects of laser irradiation on silver and copper colloids prepared by exploding wire technique in double distilled and deionized water (DDDW) have been studied. The laser irradiation was performed using laser radiation fluence about 4 J/cm2 at 532 nm wavelength. Additional irradiation of colloids resulted in the changes of particles morphology, which were monitored by absorption spectroscopy and transmission electron microscopy methods. It was found that both

Compounds were prepared from In2O3 doped SnO2 with different doping ratio by mixing and sintering at 1000oC. Pulsed Laser Deposition PLD was used to deposit thin films of different doping ratio In2O3: SnO2 (0, 1, 3, 5, 7 and 9 % wt.) on glass and p-type wafer Si(111) substrates at ambient temperature under vacuum of 10-3 bar thickness of ~100nm. X-ray diffraction and atomic force microscopy were used to examine the structural type, grain size and morphology of the prepared thin films. The results show the structures of thin films was also polycrystalline, and the predominate peaks are identical with standard cards ITO. On the other side the prepared thin films declared a reduction of degree of crystallinity with the increase of doping ra

Thin films of GexS1-x were fabricated by thermal evaporating under vacuum of 10-5Toor on glass substrate. The effect of increasing of germanium content (x) in sulfide films on the electrical properties like d.c conductivity (σDC), concentration of charge carriers (nH) and the activation energy (Ea) and Hall effect were investigated. The measurements show that (Ea) increases with the increasing of germanium content from 0.1to0.2 while it get to reduces with further addition, while charge carrier density (nH) is found to decrease and increase respectively with germanium content. The results were explained in terms of creating and eliminating of states in the band gap