Chemical resistance ceramic tiles and mortar to alkali solution are prepared and characterized in this study due to the lack of this kind of publications in ceramic literature. Most of the utilized materials are readily available raw materials and the other materials are available commercially. Physical and mechanical properties are measured and indicate that the prepared ceramic tile and mortars are competitive to traditional building materials. Chemical resistance test against alkali solution is also performed by subjecting test specimens to 10%NaOH liquid for two weeks. The results give no indication of chemical attack to specimens of ceramic tile and mortar. The results are discussed and important conclusions are drawn to encourage c

Several new copolymer containing imides were prepared from the corresponding
copolymers containing amic acids using dehydrating agent such as acetyl chloride –
tri ethyl amine mixture. The obtained yields were different ranging from 65% to
80%. Readily polymerized unsaturated copolymers containing imides free radically
using azobisisobuty ronitrile (AIBN) as initiator to yield high molecular weight
copolymers. All the prepared resins were characterized IR. NMR. Elemental
analysis. TG and DTG Techniques.

Thin films of cadmium sulphoselenide (CdSSe) have been prepared by a thermal evaporation method on glass substrate, and with pressure of 4x10-5 mbar. The optical constants such as (refractive index n, dielectric constant ?i,r and Extinction coefficient ?) of the deposition films were obtained from the analysis of the experimental recorded transmittance spectral data. The optical band gap of (CdSSe) films is calculate from (?h?)2 vs. photon energy curve. CdSSe films have a direct energy gap, and the values of the energy gap were found to increase when increasing annealing temperature. The band gap of the films varies from 1.68 – 2.39 eV.

Liquid – liquid interface reaction is one of the method to prepare nanoparticles, the preparation of nanoparticles depends on the super saturation of ions which can satisfy by layered two immiscible liquid (toluene and deionized (DI) water). The XRD-diffraction analysis give a mix structure from hexagonal and cubic and the average grain size is 7.73 nm using Sherrer relation and 9.54 nm using Williamson –Hall method. Transmission electron microscopy (TEM) Showed that the size of particles around 3 nm which is comparable with Bohr radius of CdS.
From UV-Visible spectrum analysis which use two model to estimate the radius of particles , the first one is effective mass approximate (EMA) model and the second one is tight binding model

Tin Oxide (SnO2) films have been deposited by spray pyrolysis technique at different substrate temperatures. The effects of substrate temperature on the structural, optical and electrical properties of SnO2 films have been investigated. The XRD result shows a polycrystalline structure for SnO2 films at substrate temperature of 673K. The thickness of the deposited film was of the order of 200 nm measured by Toulansky method. The energy gap increases from 2.58eV to 3.59 eV when substrate temperature increases from 473K to 673K .Electrical conductivity is 4.8*10-7(.cm)-1 for sample deposited at 473K while it increases to 8.7*10-3 when the film is deposited at 673K

  The Silver¹Indium¹Selenide (AgInSe₂) (AIS) thin¹films of (300¹Â±20) nm thickness  have been¹prepared²from the compound alloys²using thermal evaporation² technique onto the glass²substrate at room temperature, with a deposition rate²(3±0.1) nm²sec^-1.

The²structural, optical and electrical³properties have been studied³at different annealing³temperatures (Ta=450, 550 and 650) K.

The amount³or (concentration) of the elements³(Ag, In, Se) in the  prepared alloy³was verified using  an

Pure and doped TiO 2 with Bi films are obtained by pulse laser deposition technique at RT under vacume 10-3 mbar, and the influence of Bi content on the photocvoltaic properties of TiO 2 hetrojunctions is studied. All the films display photovoltaic in the near visible region. A broad double peaks are observed around λ= 300nm for pure TiO 2 at RT in the spectral response of the photocurrent, which corresponds approximately to the absorption edge and this peak shift to higher wavelength (600 nm) when Bi content increase by 7% then decrease by 9%. The result is confirmed with the decreasing of the energy gap in optical properties. Also, the increasing is due to an increase in the amount of Bi content, and shifted to 400nm when annealed at 523