The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators. To mo
... Show MoreThe choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators.
... Show MoreThe influence of different thickness (500, 1000, 1500, and 2000) nm on the electrical conductivity and Hall effect measurements have been investigated on the films of copper indium gallium selenide CuIn1-xGaxSe2 (CIGS) for x= 0.6.The films were produced using thermal evaporation technique on glass substrates at R.T from (CIGS) alloy. The electrical conductivity (σ), the activation energies (Ea1, Ea2), Hall mobility and the carrier concentration are investigated and calculated as function of thickness. All films contain two types of transport mechanisms of free carriers, and increases films thickness was fond to increase the electrical cAnductivity whereas the activation energy (Ea) would vary with films thickness. Hall Effect analysis resu
... Show MoreA numerical and experimentally investigation for two types of winglets (spiroid and blended), which are used to reduce the induced drag caused by the trailing vortices were presented and discussed in this work. The SOLIDWORK 2016 was used to model a rectangular wing geometry of NACA2415 cross-sectional airfoil with blended and spiroid airfoils (2415 and 0012). The steady, incompressible N.S equations with standard (
This research provides a study of the virtual museums features and characteristics and contributes to the recognition of the diversity of visual presentation methods, as the virtual museums give the act of participation and visual communication with programs at an open time, so that it would contribute to reflection, thinking and recording notes, developing the actual and innovative skills through seeing the environments. The study has been divided into two sections the first one is virtual museum techniques. The techniques were studied to reach the public and are used remotely by the services of personal computers or smart phones being virtual libraries that store images and information that was formed and built in a digital way and how
... Show MoreThe presence of different noise sources and continuous increase in crosstalk in the deep submicrometer technology raised concerns for on-chip communication reliability, leading to the incorporation of crosstalk avoidance techniques in error control coding schemes. This brief proposes joint crosstalk avoidance with adaptive error control scheme to reduce the power consumption by providing appropriate communication resiliency based on runtime noise level. By switching between shielding and duplication as the crosstalk avoidance technique and between hybrid automatic repeat request and forward error correction as the error control policies, three modes of error resiliencies are provided. The results show that, in reduced mode, the scheme achie
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