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On the Use of 6th-Order Tunable Complementary Metal-Oxide-Semiconductor Varactor based Filter in Ultra-Wideband Low Noise Amplifier
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Background:

The plethora of the emerged radio frequency applications makes the frequency spectrum crowded by many applications and hence the ability to detect specific application’s frequency without distortion is a difficult task to achieve.

Objective:

The goal is to achieve a method to mitigate the highest interferer power in the frequency spectrum in order to eliminate the distortion.

Method:

This paper presents the application of the proposed tunable 6th-order notch filter on Ultra-Wideband (UWB) Complementary Metal-Oxide-Semiconductor (CMOS) Low Noise Amplifier (LNA) utilising self-forward body bias (SFBB).

Results:

The proposed filter presents 23.5dBm minimum interferer rejection (IR) and attenuates the interferer signal from -43dBm to -67dBm at frequency 5.17GHz. In addition, the maximum IR is 40dBm and attenuates the interferer signal from -41dBm to -81dBm at frequency 5.785GHz. The proposed filter provides coarse tuning with frequency spacing (10MHz) and soft tuning with frequency spacing (1MHz). The UWB CMOS LNA consumes only 5.22mW from a supply voltage of 1.2V and presents a maximum gain of 14dB at frequency 6.25GHz in the -3dB bandwidth from 4.75GHz to 7.5GHz. In addition, the average noise figure is 3.1dB and the input insertion losses (S11) is less than -12dB along the designed bandwidth. The simulation is performed in Advanced Design System (ADS2016.01) software utilising 180nm Taiwan Semiconductor Manufacturing Company (TSMC) Berkeley Short-channel Insulated Gate Field Effect Model (BSIM3v3) model files.

Conclusion:

The proposed method achieves high interferer power rejection with both soft and coarse tuning.

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The contemporary development applications on scientific areas of acyclic and cyclic Schiff bases and their complexes.

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Structural, Optical, and Morphological Study of the Zinc Oxide Nano-Thin Films with Different Thickness Prepared by Pulsed Laser Deposition Technique
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The goal of this investigation is to prepare zinc oxide (ZnO) nano-thin films by pulsed laser deposition (PLD) technique through Q-switching double frequency Nd:YAG laser (532 nm) wavelength, pulse frequency 6 Hz, and 300 mJ energy under vacuum conditions (10-3 torr) at room temperature. (ZnO) nano-thin films were deposited on glass substrates with different thickness of 300, 600 and 900 nm. ZnO films, were then annealed in air at a temperature of 500 °C for one hour. The results were compared with the researchers' previous theoretical study. The XRD analysis of ZnO nano-thin films indicated a hexagonal multi-crystalline wurtzite structure with preferential growth lines (100), (002), (101) for ZnO nano-thin films with different thi

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Synthesis and Characterization of Some Metal Complexes with their Sulfamethoxazoleand 4,4'-dimethyl-2,2'-bipyridyl and study Cytotoxic Effect on Hep-2 Cell Line
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The ligand 4-amino-N-(5-methylisoxazole-3-yl)-benzene-sulfonamide(L1) (as a chelating ligand) was treated with Pd(II),Pt (IV) and Au(III) ions in alcoholic medium in order to prepare a series of new metal complexes. Mixed ligand complexes of this primary ligand were prepared in alcoholic medium in presence of the co-ligand 4,4'-dimethyl-2,2'-bipyridyl(L2) with Cu(II) ,Pd(II) and Au(III) ions. The complexes were characterized in solid state using flame atomic absorption, elemental analysis C.H.N.S, FT-IR, UV-Vis Spectroscopy, conductivity and magnetic susceptibility measurements. The nature of some complexes formed in ethanolic solution has been studied following the molar ratio method, also stability constant was studied and the complexes f

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Deployment of multiservice code in FSO-based hybrid subcarrier system
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