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Growth and optoelectronic properties of p-CuO:Al/n-Si heterojunction
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Scopus
Publication Date
Fri Jan 11 2019
Journal Name
Iraqi Journal Of Physics
Bulk heterojunction blend (NiPcTs:PEDOT:PSS) in gas sensing
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Thin films of bulk heterojunction blend Ni-Phthalocyanine
Tetrasulfonic acid tetrasodium salt and dpoly
(3, 4-ethylenedioxythiophene) poly (styrenesulfonate) (NiPcTs:
PEDOT: PSS) with different (PEDOT:PSS) concentrations (0.5, 1, 2)
are prepared using spin coating technique with thickness 100 nm on
glass and Si substrate. The X-Ray diffraction pattern of NiPcTs
powder was studied and compared with NiPc powder, the pattern
showed that the structure is a polycrystalline with monoclinic phase.
XRD analysis of as-deposited (NiPcTs/PEDOT:PSS) thin films
blends in dicated that the film appeared at(100), (102) in
concentrations (0.5, 1) and (100) in concentration (2). The grain size
is increased with increasing

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Crossref
Publication Date
Tue Jan 01 2019
Journal Name
Aip Conference Proceedings
Highly selective CdS:Ag heterojunction for photodetector applications
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Crossref (31)
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Publication Date
Mon Jan 17 2011
Journal Name
مجلة كلية التربية
Synthesis and Characterization of Complexes of [(N,N- -Bis(2- Hydroxy Ethyl) Glycine] with Some Metal Salts
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Some transition metal ions (Cr +3, Co+2 , Ni+2,Cu+2, Zn+2,Ag + ,Cd+2 ) complexes of [(N, N- - Bis(2- hydroxy ethyl) Glycine] (Bicine) have been synthesized and characterized by FTIR ,UV-Visble spectroscopy, atomic absorption, magnetic susceptibility, conductivity measurements and study of the nature of the complexes formed in ethanolic solution following the moleratio method. From the results obtained the following general formola have been given for the prepared complexes [M m+ (Bicine)n]. XH2O

Publication Date
Wed Feb 01 2017
Journal Name
Journal Of Multidisciplinary Engineering Science Studies
Investigation of p-Ps Produced by Electrochemical Etching
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The nanocrystalline porous silicon (PS) films are prepared by electrochemical etching ECE of p -type silicon wafer with current density (10mA/cm ) and etching times on the formation nano -sized pore array with a dimension of around different etching time (10 and 20) min. The films were characterized by the measurement of XRD, atomic force microscopy properties (AFM). We have estimated crystallites size from X -Ray diffraction about nanoscale for PS and AFM confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous st

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Publication Date
Sun Dec 18 2022
Journal Name
Journal Of The College Of Basic Education
A (k,ℓ) Span in Three Dimensional Projective Space PG(3,p) Over Galois Field where p=4
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الغرض من هذا العمل هو دراسة الفضاء الإسقاطي ثلاثي الأبعاد PG (3، P) حيث p = 4 باستخدام المعادلات الجبرية وجدنا النقاط والخطوط والمستويات وفي هذا الفضاء نبني (k، ℓ) -span وهي مجموعة من خطوط k لا يتقاطع اثنان منها. نثبت أن الحد الأقصى للكمال (k، ℓ) -span في PG (3،4) هو (17، ℓ) -span ، وهو ما يساوي جميع نقاط المساحة التي تسمى السبريد.

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Publication Date
Tue Apr 22 2014
Journal Name
International Journal Of Advanced Research
Effect of tillage system and deficit irrigation on consumptive use, some soil physical properties, growth and yield of potato Solanum tuberosum L.
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Publication Date
Sun Jun 01 2014
Journal Name
Baghdad Science Journal
'I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions
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In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition r_d(1.04nm/sec) as function to annealing temperature (373 and 473K), from XRD analysis we can see that the degree of crystalline increase with T_a, and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures.

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Crossref
Publication Date
Tue Mar 11 2014
Journal Name
Baghdad Science Journal
'I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions
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In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition (1.04nm/sec) as function to annealing temperature (373 and 373K), from XRD analysis we can see that the degree of crystalline increase with , and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures.

Publication Date
Wed Dec 30 2009
Journal Name
Iraqi Journal Of Physics
Preparation and characterization of nanostructure high efficient CdS/Si hetrojunction by CBD
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In this paper, CdS/Si hetrojunction solar cell has been made by
Chemical Bath Deposition (CBD) of CdS thin film on to
monocrystalline silicon substrate. XRD measurements approved that
CdS film is changing the structure of CdS films from mixed
hexagonal and cubic phase to the hexagonal phase with [101]
predominant orientation. I-V characterization of the hetrojunction
shows good rectification, with high spectral responsivity of 0.41
A/W, quantum efficiency 90%,and specific detectivity 2.9*1014
cmHz1/2W -1 .

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Publication Date
Tue Oct 30 2018
Journal Name
Iraqi Journal Of Physics
N3, N749 dyes effect on the TiO2 for optoelectronic applications
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The present work aimed to study effect of (N749 & N3) dyes on TiO2 optical and electrical properties for optoelectronic application. The TiO2 paste prepared by using a doctor blade method. The samples were UV-VIS specterophometricall analyzes of TiO2 before and after immersed in dyes (N749 & N3). The results showed absorption spectra shift toward the visible region due to the adsorption of dye molecules on the surface of oxide nanoparticles. It is seen that the Eg determined to give a value of 3.3eV for TiO2 before immersing in dyes, and immersing in dyes (N749 & N3) are (1.4 &1.6 eV) respectively. The structural properties (XRD), (FTIR) and (SEM) for the sample prepared were investigated and (J-V) characteristics was stu

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