The existing investigation explains the consequence of irradiation of red laser on the optic properties of (CoO2) films. The film was equipped by the utilization of semi-computerized spray pyrolysis technique (SCSPT), it is the first time that this technique is used in the preparation and irradiation using a laser in this technique. From the XRD analysis, the crystalline existence with trigonal crystal system was when the received films were processed by continuous red laser (700 nm) with power (>1000mW)for different laser irradiation time using different number of times a laser scan (0, 6, 9, 12, 15 and 18 times) with total irradiation time(0,30,45,60,75,90 min) respectively at room temperature. The optic properties of CoO2 thin samples was struck by light of red laser. The parameters such as the absorbance, coefficient of absorption coefficient of extinction refractive index, optic conductivity, the realϵ_1 and imaginaryϵ_2part of the dielectric constant of the films rises subsequently by laser irradiation, only the transmittance was decremented with laser ray of light. The optic energy gap was reduced from (1.91eV) without irradiation to (1.57eV) and subsequent laser irradiation, and there is a great alteration of optical energy gap values for photovoltaic (PV) utilization. As the results showed that the laser irradiation method has a clear change in the optical properties with less time and energy than the traditional annealing methods, this is the aim of the study.
This study investigates the impact of incorporating carbon quantum dots (CQDs) into the SnO 2 electron transport layer (ETL) on the performance of all-inorganic CsPbBr 3 perovskite solar cells (PSCs). CQDs with abundant surface functional groups were synthesized hydrothermally and integrated into a low-temperature, solution-processed SnO 2 ETL at varying concentrations (0%, 2% and 4%). Comprehensive characterization revealed that the SnO 2 : CQDs composite films exhibited
... Show MoreIt is shown that pure and 3% boron doped a-Si0.1Ge0.9:H and a-Si0.1Ge0.9:N thin films
could be prepared by flash evaporation processes. The hydrogenation and nitrogenation
are very successful in situ after depositing the films. The FT-IR analysis gave all the
known absorbing bonds of hydrogen and nitrogen with Si and Ge.
Our data showed a considerable effect of annealing temperature on the structural and
optical properties of the prepared films. The optical energy gap (Eopt.) of a-Si0.1Ge0.9
samples showed to have significant increase with annealing temperature (Ta) also the
refractive index and the real part of dielectric constant increases with Ta, however the
extinction coefficient and imaginary part of dielect
In this work, nanostructure zinc sulfide (ZnS) thin films at temperature of substrate 450 oC and thickness (120) nm have been produced by chemical spray pyrolysis method. The X-Ray Diffraction (XRD) measurements of the film showed that they have a polycrystalline structure and possessed a hexagonal phase with strong crystalline orientation of (103). The grain size was measured using scanning electron microscope (SEM) which was approximately equal to 80 nm. The linear optical measurements showed that ZnS nanostructure has direct energy gap. Nonlinear optical properties experiments were performed using Q-switched 532 nm Nd:YAG laser Z-scan system. The nonlinear refractive index (n2) and nonlinear absorption coefficient (β) estimated for Z
... Show MoreBackground: Wound healing is a complicated, interactive, integrative process involving cellular and chemotactic activity, the release of chemical mediators and associated vascular response which includes number of phases: inflammatory phase, proliferative phase and remodeling phase. Low level laser therapy can be more effective in the three overlapping phases of wound healing. Biostimulation appears to have an effect on the cellular level, by increasing cellular function and stimulating various cells. The aim of present study was to evaluate histologically the effect of 780-805 diode laser the intensity of inflammation and pattern of epithelization in mice model. Material and methods: The experimental study was performed on ninety six white
... Show MoreIn this work, As60Cu40-xSex thin films were synthesized, and the pulsed laser deposition method was used to study the effected partial replacement of copper with selenium. The electrical characteristics and optical characteristics, as indicated by the absorbance and transmittance as a function of wavelength were calculated. Additionally, the energy gap was computed. The electrical conductivity of the DC in the various conduction zones was calculated by measuring the current and voltage as a function of temperature. Additionally, the mathematical equations are used to compute the energy constants, electron hopping distance, tail width, pre-exponential factor, and density of the energy states in variation zones (densities of the energ
... Show MorePulsed-laser deposition (PLD) technique was used to prepare thin films from cerium oxide (CeO2) doped with erbium and indium oxides. In order to characterize the morphology and sensing features, these films were deposited on glass and/or single silicon substrates, respectively, with erbium and indium oxides. The morphological investigation conducted using atomic force microscope has shown an increase in the non-regularity of particle diameter with increasing doping ratios of both oxides. The maximum particle diameter of 61.45nm was obtained for 9% Eu2O3-doped CeO2. The surface roughness value of Eu2O3-doped ceria was higher than those of In2O3-doped ceria. The gas sensing measurements were done at
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